Hemispherical Grained Silicon formation Condition on In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method (Seeding Method를 이용한 인이 도우핑된 Amorphous-Si에서의 HSG형성 조건)
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- Journal of the Korea Institute of Information and Communication Engineering
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- v.5 no.6
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- pp.1128-1135
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- 2001