• Journal of Welding and Joining
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• v.5 no.1
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• pp.73-80
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• 1987

During PWHT, it is well known that residual stress in weld HAZ is one of the reasons for PWHT embitterment. In case of static loading, it was experimentally found that fracture toughness of weld HAZ was dependant upon PWHT conditions. However, the effects of PWHT on fatigue behavior are not clearly verified. Therefore, in this paper, the effects of heating rate PWHT conditions and residual stress simulated in weld HAZ of Cr-Mo steel on fatigue crack propagation behavior were evaluated by fatigue Testing and SEM observation. The obtained results are summarized as follows; 1. Applied stress($10 Kgf/mm^2$) in weld HAZ during PWHT tneded to decrease fatigue strength and to increase fatigue crack growth rate. 2. Applied stress and slow heating rate of 60.deg. C/hr during PWHT contributed to precipitin of impurity elements as well as carbide, which promoted the fatigue crack growth. 3. Fatigue crack growth rate decreased at the heating rate of 220.deg. C/hr in contrast with 600.deg. C/hr and 60.deg. C/hr.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.171-174
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• 1999

We have characterized solid solution Y$_{l-x}Ca_xBa_2Cu_3O_y$ (0${\le}$x${\le}$0.3) materials by measuring the XRD pattern, resistivity and hole concentrations, etc. As Ca concentration increases, T$_c$, is decreased monotonically because the hole concentration on the superconducting plane increases beyond the optimum region in the electronic phase diagram due to the hole transfer from the Cu-O chain to the CuO$_2$ plane. A very small amount of secondary phase have large effects on the analysis of oxygen content and hole concentration etc. The results before the correction of impurity phase are compared with those after the correction.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.277-284
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• 1996

The water test results indicated that the impurities had detrimetal effect on the wear resistance of silicon nitride and the effects were getting severe as the temperature increased. Especially when Ca existed as an impurity the detrimental effects was the most severe. These results were resulted from the fact that impurities lowered the mechanical properties of the grain boundary phase of silicon nitride. The wear test results of glass/glass-ceramic specimens having a similar composition to the grain boundary phase of silicon nitride revea-led that the specimen containing CaO showed the lowest wear resistance. The existence of Fe and Ca at the grain boundary phase assisted forming a grain boundary phase with relatively low refractoriness. Therefore at a given wear condition the removal of deformed layer would be easier. The results showed that the glass phases could be modified by heat-treatment and this modification improved tribological characteristics of the silicon nitride.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.256-259
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• 1996

In this paper, We studied polyethylene thin film to evaluate the effects of crystal structure on breakdown properties and the dielectric strength on the condition of impurity free. Bielectric strength of the finn obtained with self healing method that is able to test repeatedly on the same sample is about 3.58 MV/cm at 0.73 $\mu\textrm{m}$. The film shows outstanding crystal domain an\ulcorner crystal structure. The size of spherulites obtained reach 150-200 $\mu\textrm{m}$ in diameter.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.128-133
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• 2005

The effects of Mn and Cr on the crystallization behaviors of Fe-bearing intennetallics in A356 alloy were studied. Coarse and acicular ${\beta}-Al_{5}$FeSi phase in A356-0.20wt.%Fe alloy was modified into small ${\alpha}$-Al(Fe,Mn)Si and ${\alpha}$-Al(Fe,Cr)Si phases in response to Mn and Cr addition, respectively. Increasing of Mn addition amount elevates the crystallizing temperature of ${\alpha}$-Al(Fe,Mn)Si and the Mn/Fe ratio in the ${\alpha}$-Al(Fe,Mn)Si. Cr is more effective to modify ${\beta}-Al_{5}$FeSi in comparison with Mn. ${\alpha}$-Al(Fe,Mn)Si phase had BCC/SC dual structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.57-62
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• 2018

In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.

• Polymer(Korea)
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• v.26 no.3
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• pp.410-414
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• 2002

The late transition Pd catalyst of low oxophilicity that has ferrocene -based diimine ligand for stabilization of center metal had been synthesized and applied for the polymerization of methyl methacrylate (MMA). In the presence of triisobutylaluminium (TIBA) for impurity scavenger, the effects of polymerization temperature and [TIBA]/[Pd] mole ratio on the yield and glass transition temperature ($T_g$) of PMMA had been examined. For 40~$50^{\circ}C$ of polymerization temperature and 2000~3000 of [TIBA]/[Pd] mole ratio, higher polymer yields were obtained. It was observed that ($T_g$) of PMMA is almost independent to the polymerization temperature but influenced by the [TIBA]/[Pd] mole ratio. With the examination of($T_g$) of PMMA with the structure of polymer, it had been found that T$_{g}$ of PMMA exhibits a linear relationship with the isotacticity of polymer.r.

• Journal of Welding and Joining
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• v.34 no.5
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• pp.61-69
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• 2016

A numerical simulation of the solid/liquid coexistence temperature range, using solidification segregation model linked with the Kurz-Giovanola-Trivedi model, explained the mechanism of the BTR shrinkage (with an increase in welding speed) in type 310 stainless steel welds by reduction of the solid/liquid coexistence temperature range of the weld metal due to the inhibited solidification segregation of solute elements and promoted dendrite tip supercooling attributed to rapid solidification of laser beam welding. The reason why the BTR enlarged in type 316 series stainless welds could be clarified by the enhanced solidification segregation of impurity elements (S and P), corresponding to the decrement in ${\delta}-ferrite$ crystallization amount at the solidification completion stage in the laser welds. Furthermore, the greater increase in BTR with type 316-B steel was determined to be due to a larger decrease in ${\delta}-ferrite$ amount during welding solidification than with type 316-A steel. This, in turn, greatly increases the segregation of impurities, which is responsible for the greater temperature range of solid/liquid coexistence when using type 316-B steel.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.177-180
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• 2005

Ferroelectric $LiTaO_3$ single crystals, grown by the Czochralski method, were thermally treated at temperature $1000^{\circ}C\;and\;1100^{\circ}C$. Electron paramagnetic resonance (EPR) study of stoichiometric $LiTaO_3$ and thermally treated $LiTaO_3$ crystals has been investigated by employing an X-band spectrometer. From the $Fe^{3+}$ EPR spectra, it turned out that there is no change of site location and local site symmetry around $Fe^{3+}$ impurity ion between stoichiometric and thermally treated $LiTaO_3$ single crystals. We confirmed that the ionic state of $Fe^{3+}$ ion changed after thermal treatment. The EPR parameters of $Fe^{3+}$ ion in $LiTaO_3$ single crystals are determined with effective spin Hamiltonian.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.111-117
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• 1995

TiO2 thin films were prepared on a (100)silicon wafer using a chemical vapor deposition(CVD) method. The deposition experiments were performed using the TTIP in the deposition temperature ransing from 200 content. The deposition rate of TiO2 was increased with the substrate temperature and the oxygen content. The thickness of the deposited thin film and the compositional analysis of this thin films with theoxygen content were measured using Ellipsometry, SEM and ESCA, respectively. The deposited thin film was composed of a bilayer, external TiO2 and internal Ti. Carbon as a residual impurity was found to remain when zero sccm O2 was purged into a reaction chamber and the composition of the deposited thin film was found to change Ti into TiO in a deeper layer. However, when 600sccm O2 was supplied to a reaction chamber, it has been found to reside less carbon content than without O2. Finally, in the condition of 1200sccm O2, no impurity level of carbon was observed and a deeper layer consisted of the Ti composite, even though the deposited surface was composed of TiO2.