• 대한방사선기술학회지:방사선기술과학
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• 제22권1호
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• pp.55-60
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• 1999

In this study, the highly sensitive $CaSO_4:Tb$ glass capsule type TLDs are fabricated and their trap parameters are determined. The optimum conditions of fabricating of $CaSO_4:Tb$ phosphor was obtained to be in impurity concentration of Tb 1.0 mol% and sintering of $600^{\circ}C$, 2 hr. The glow curve of $CaSO_4:Tb$ consists of three glow peaks and these peaks are isolated by thermal bleaching method. Activation energy of the three glow peaks measured by the initial rise, the peak shape and the heating rate method are 0.70, 0.87, and 1.03 eV. The frequency factors are $1.76{\times}10^9,\;1.74{\times}10^9$, and $9.77{\times}10^8\;s^{-1}$, and the kinetic orders are 1.12, 1.46, and 1.34, respectively. The isolated glow peaks are fitted by least square method and optimum temperature range of the main peak for radiation dosimetry is $230{\sim}295^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• 한국환경과학회지
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• 제17권3호
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• pp.351-357
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• 2008

In order to develope an efficient way for the synthesis of highly pure 1,4-sorbitan solution from sorbitol, some experimental studies were performed. The reaction showed first order reaction with activation energy of 118.3 KJ/mol. Color of the product solutions changed to brown with reaction temperature and reaction time. The equilibrium contents of 1,4-sorbitan increased with decrease in reaction pressure, but the content of major impurity, sorbide, showed maximum about 550 torr vacuum with $H_3PO_4$ catalyst. The reasonable catalyst configuration was 0.26 wt% PTSA and 1 wt% $H_3PO_2$ and optimum reaction temperature and pressure range was $110\sim120^{\circ}C$ and $700\sim720$ torr vacuum, respectively. At optimum reaction conditions, we could obtain white product solutions of highly pure 1,4-sorbitan with sorbide less than 10 wt%. This white product solution is advantageous for preparation of high quality span, anti-fogging agent.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.15-20
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• 2000

In this paper. Thermally Stimulated Current spectra have been measured in the Polypy - romellitimide (polyimide). As a result of the investigation. three peaks have been observed: $A(50^{\circ}C)$, $B(120^{\circ}C)$, $C(200^{\circ}C)$. Among three peaks, C peak has been observed in detail. The C peak is shown to be created due to the polarization of ionic space charge from the experimental results which were measured as a function of forming time, forming temperature. forming voltage and collecting voltage. As a result, we have measured the TSC in ion ($Na^+$) implanted - Polyimide, also found the peak at $215^{\circ}C$. Therefore, TSC characteristics in the C peak is probably caused by residual impurity. And The activation energy caculated by means of initial rising method 1.8eV, hopping distance. $90{\AA}$. and the mobility. $2.88{\times}10^{-11}cm^2/v.s$

• 센서학회지
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• 제4권3호
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• pp.43-50
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• 1995

Eu와 Fe를 불순물로 첨가한 BGO 섬광체 단결정을 Czochralski 방법으로 육성하였다. 그리고 육성된 BGO 단결정의 trap 특성을 알기 위하여 활성화 에너지, 주파수인자 및 열발광차수 등 포획매개변수를 구하고, 이것을 순수 BGO 섬광체 단결정의 열형광 특성과 비교하였다. 그리고 육성된 BGO 단결정의 광투과율을 측정하였다.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1091-1098
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• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.124-127
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• 2003

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.363-364
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• 2007

Phospho-olivine $LiFePO_4$ cathode materials were prepared by hydrothermal reaction at different temperatures. The structural performance of $LiFePO_4$ powders were characterized by X-ray diffraction (XRD). $LiFePO_4$/Li batteries were characterized electrochemically by charge/discharge experiments. The XRD results demonstrate that $LiFePO_4$ powder has an orthorhombic olivine-type structure with a space group of Pnmb. Among the synthesized cathode materials, $LiFePO_4$synthesized at $170^{\circ}C$ and subsequently annealed at $500^{\circ}C$ shows the best electrochemical properties. It shows initial discharge capacity of $167\;mAh\;g^{-1}$ (98% of the theoretical capacity) close to the theoretical capacity of $LiFePO_4$ ($170\;mAh\;g^{-1}$) at 0.1 C rate, which is ascribed to the enhanced degree of crystallinity, better phase purity, more spherical and more finely dispersed nanoparticles, crystallization and activation of small amount impurity.

• 한국재료학회지
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• 제34권4호
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• pp.185-193
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• 2024

In this study, NASICON-type Li_1+XGa_XTi_2-X(PO₄)₃ (x = 0.1, 0.3 and 0.4) solid-state electrolytes for all-solid-state batteries were synthesized through the sol-gel method. In addition, the influence on the ion conductivity of solid-state electrolytes when partially substituted for Ti⁴⁺ (0.61Å) site to Ga³⁺ (0.62Å) of trivalent cations was investigated. The obtained precursor was heat treated at 450 ℃, and a single crystalline phase of Li_1+XGa_XTi_2-X(PO₄)₃ systems was obtained at a calcination temperature above 650 ℃. Additionally, the calcinated powders were pelletized and sintered at temperatures from 800 ℃ to 1,000 ℃ at 100 ℃ intervals. The synthesized powder and sintered bodies of Li_1+XGa_XTi_2-X(PO₄)₃ were characterized using TG-DTA, XRD, XPS and FE-SEM. The ionic conduction properties as solid-state electrolytes were investigated by AC impedance. As a result, Li_1+XGa_XTi_2-X(PO₄)₃ was successfully produced in all cases. However, a GaPO₄ impurity was formed due to the high sintering temperatures and high Ga content. The crystallinity of Li_1+XGa_XTi_2-X(PO₄)₃ increased with the sintering temperature as evidenced by FE-SEM observations, which demonstrated that the edges of the larger cube-shaped grains become sharper with increases in the sintering temperature. In samples with high sintering temperatures at 1,000 ℃ and high Ga content above 0.3, coarsening of grains occurred. This resulted in the formation of many grain boundaries, leading to low sinterability. These two factors, the impurity and grain boundary, have an enormous impact on the properties of Li_1+XGa_XTi_2-X(PO₄)₃. The Li_1.3Ga_0.3Ti_1.7(PO₄)₃ pellet sintered at 900 ℃ was denser than those sintered at other conditions, showing the highest total ion conductivity of 7.66 × 10^-5 S/cm at room temperature. The total activation energy of Li-ion transport for the Li_1.3Ga_0.3Ti_1.7(PO₄)₃ solid-state electrolyte was estimated to be as low as 0.36 eV. Although the Li_1+XGa_XTi_2-X(PO₄)₃ sintered at 1,000 ℃ had a relatively high apparent density, it had less total ionic conductivity due to an increase in the grain-boundary resistance with coarse grains.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.