• Analytical Science and Technology
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• v.30 no.5
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• pp.240-251
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• 2017

1,1,1,2-Tetrafluoroethane (HFC-134a), which is used as refrigerant in air conditioners, has been recently regulated as a greenhouse gas and is recommended for reuse by refining. It is very important to quantitatively analyze trace impurities present in the refrigerant to evaluate the criteria for reuse. In this study, trace impurities including C, H, Cl, and F, which are difficult to quantify because there are no reference materials, were quantitatively analyzed by a gas chromatograph-atomic emission detector (GC/AED); for this analysis, this was preceded by a qualitative analysis with a GC-mass selective detector (GC/MSD). In addition, the AED response was investigated using a hydrocarbon mixed reference material, which was proportional to the number of atoms in the component. Fifteen refrigerant components were detected as trace impurities in HFC-134a by qualitative analysis of trace impurities including C, H, Cl, and F in the samples. Based on the results of the qualitative analysis, quantitative analysis of trace impurities using AED showed that the highest mole fractions were for the $CHClF_2$ component ($45438.38{\mu}mol/mol$) in one sample and for the $C_2H_2ClF_3$ component ($1311.47{\mu}mol/mol$) in another sample. From this study, it has been shown that it is possible for this analytical method to be applied to the qualitative and quantitative analysis of trace compounds in refrigerants, which are difficult to quantify because of the absence of reference materials.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.447-452
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• 1997

Effects of metal impurities in insulation of distribution cables on electrical conduction of distribution cables was investigated. Samples of Al, Cu, Fe are fabricated as metallic impurities, and measured electrical conductivity in the voltage range of 0~10 KV. Temperature dependent effect of hysteresis curves and the relationship between forward and reverse current due to impurity content are discussed.

• Resources Recycling
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• v.11 no.5
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• pp.21-23
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• 2002

A new process based on the co-precipitation method was developed fer removing harmful impurities during Mn-Zn ferrite production such as $SiO_2$ and P from waste pickle liquor. By this process a final result of less than 100 ppm of $SiO_2$ and less than 10 ppm of P content in the ferric oxide is easily attained. Though Ca cannot be removed by this process, water rinsing of the ferric oxide is effective fer reducing Ca content to less than 100 pm. For further purification, the origins of each impurity must be investigated and then taken away.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.58-61
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• 1997

Effects of ionic impurities on the dielectric breakdown of the crosslinked polyethylene (XLPE) were studied using aqueous electrolytes. It was found that the AC breakdown strength of XLPE decreases considerably when the ions are present in the electrodes composed of aqueous electrolyte. Details of results were described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.301-304
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• 1997

Effects of volatile impurities on deterioration characteristics of XLPE were investigated. Block type plate with needle-plane electrode and artificial void filled with $N_2$gas or humidity was subjected under high electric field. The dyed region by oxidation reaction around the artificial void filled with humidity was detected before tee initiation. Electrical tree was started from the tip of void filled with $N_2$gas earlier than humidity.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.239-242
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• 2002

Luminescence efficiency of phosphors, $SrTiO_3;Pr^{3+}$ and $SrIn_2O_4:Pr^{3+}$, is increased remarkably by III-group impurities. This effect is explained by a picture that carriers thermally released from impurity-induced traps supply energy to $Pr^{3+}$ ions. The impurities also improve carrier transport efficiency by reducing lattice defects. This picture indicates a possibility to develop new ternary oxide phosphors.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.69-70
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• 2006

Waste vinyl tretreatment system has been developed by the joint project between KIMM and Woosung Co. General process for removal of impurities from waste vinyl is consisted of feeding, separating, cutting, washing, drying and recovering impurities. However, there are problems such as wastewater when washing of waste vinyl. In order to solve these problems we have developed new dry type cleaning system.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.412-414
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• 2014

In this study, we investigate atomic and electronic structure of graphene with substitutional impurities such as boron or nitrogen atom using density functional theory (DFT) calculations. To investigate the effects of substitutional impurities in graphene, we consider a ($6{\times}6$) supercell of graphene in our calculations. For detailed electronic properties of graphene, we compare the energy band structure of B- or N-doped graphene with that of pristine graphene.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1402-1404
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• 1997

To evaluate the effects of impurities on insulating properties of polymeric insulator in high electric power distribution cable, OIT and OMT were measured. By using Eyring plot, the thermodynamic parameters of ${\Delta}H$ and ${\Delta}S$ could be obtained.