• Journal of Advanced Navigation Technology
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• v.27 no.6
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• pp.849-854
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• 2023

In this paper, a high-efficiency power amplifier was designed by applying the operating point Class J using LDMOS(laterally diffused metal oxide semiconductor) and optimizing the output matching circuit so that the second harmonic impedance becomes the reactance impedance. The designed power amplifier has a frequency of 108 ~ 110 MHz, Characteristics of PAE(power added efficiency) is 71.5% at P_SAT output (54.5 dBm), 55.5% at P_1dB output (51.5 dBm), and 24.38% at 45 dBm. The CSB(carrier with sideband) amplifier, which is the reference signal in the spatial modulation method, has an operating output of 45 dBm ~ 35 dBm, and linear SDM(sum in the depth of modulation) characteristics(40% ± 0.3%) were obtained. We measure the characteristics in amplitude modulation according to the bias operating point of the power amplifier for CSB and propose the optimal operating point to obtain linear modulation characteristics.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.12-24
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• 2001

The key advantage of LTCC(low temperature co-fired ceramics) technology is the ability to integrate passive components such as resistors, capacitors, and inductors. More compact circuits with an increased scale of integration are needed with the development for advanced telecommunication system such as IMT-2000. LTCC technology can be obtained by removing these elements from the substrate surface to inside of ceramic body. And it can miniaturize the wireless phone through integration of planar patch antenna, duplexer, band pass filter, bias line, circuit of impedance matching and RF choke etc. Futhermore, with the multilayer chip process and its outstanding electrical material characteristics, LTCC is predestined for highly-integrated, cost effective wide band applications. This paper focuses on the general description of LTCC MCM technologies and the fabrication of the multilayer VCO module.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.1
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• pp.24-30
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• 2010

In this paper, a novel electrically small monopole type resonant antenna is proposed. The very short length monopole (${\iota}{\approx}{\lambda}_g/15$ ) acts as a capacitive element and the slot on the ground structure acts as an inductive element, hence the combined system with these two elements thus form an LC resonator. The equivalent circuit model of the antenna structure was used to analysis and qualify the design correctness. Although the proposed antenna has very small size, it shows good performances. The measured maximum gain and radiation efficiency of the fabricated antenna at the frequency of 2.1 GHz was 3.6 dBi and 77.8 %, respectively.

• Journal of Advanced Navigation Technology
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• v.17 no.2
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• pp.177-182
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• 2013

In this paper, printed antenna which can be applied to a built-in wireless module of the security controller operating at global positioning system(GPS) L1 frequency band(1.575GHz) is proposed. The proposed antenna is basically composed of a microstrip patch antenna with inserting feed. In particular left and right slots which are respectively asymmetric are used for impedance matching, whereas slot with one open-end and shorting point are used on the bottom plane to set operating frequency and enhance bandwidth. It is observed at the desired GPS L1 frequency band that the radiation efficiency and gain of the proposed antenna are 90% and more than 4.8dBi respectively.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.71-78
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• 2011

In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of $40{\pm}1$ dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• The Journal of the Acoustical Society of Korea
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• v.21 no.7
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• pp.592-599
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• 2002

In this study, an ultrasonic transducer was designed with a commercial finite element analysis (FEA) code, PZFlex, and fabricated based on the design. The transducer has the dimension and shape suitable for abdomen diagnosis working at 5 ㎒ and consists of 128 piezoelectric elements disposed in a convex linear array form. The transducer is composed of two impedance matching layers, one backing layer, and kerfs placed between the piezoelectric elements. Validity of the design with the FEA was illustrated through experimental characterization of a sample transducer. Comparison with the design results by equivalent circuit analysis method was also made to check the superiority of the FEA design.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1984-1986
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• 2000

In pulsed-power techniques. Marx generator is generally used for the high-power device. but this generator has insulation and spatial problems. So we will suggest a pulse transformer that has a small size to generate the high voltage pulse instead of Marx generator. In this paper, Pulse duration is 4 [${\mu}s$] and the ratio of input and output voltage is 40[kV]/200[kV](step-up ratio=5). The output voltage and the process of pulse compression for pulse circuit are simulated by EMTP (Electro-Magnetic Transient Program). The secondary voltage of pulse transformer is about 200[kV] and pulse width is 4[t/s]. When the secondary winding of the pulse transformer is saturated. the pulse width is 1.25[${\mu}s$]. We selected dummy load 50[$\Omega$] for impedance matching. The pulse voltage of dummy load is 100[kV] and pulse width is 500[ns].

• 전자공학회논문지 IE
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• v.47 no.1
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• pp.1-5
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• 2010

This paper presents new results of the impact of gate structure on hot-carrier-induced performance degradation in SOI low noise amplifier. Circuit simulations were carried out using the measured S-parameters of H--gate and T-gate SOI MOSFETs and Agilent's Advanced Design System (ADS) to compare the performance of H-gate LNA and T-gate LNA before and after stress. We will discuss the figure of merit for the characterization of low noise amplifier in terms of impedance matching (S11), noise figure, and gain as well as the relation between device degradation and performance degradation of LNA.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.59-63
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• 2014

Previous studies have selected wireless power transmission system using 2.45 GHz of ISM band, but the researches for 5.8 GHz microwave wireless power transmission have been relatively rare. The 5.8 GHz has some advantages compared with 2.45 GHz. Those are smaller antenna and smaller integrated system for RFIC. In this paper, the 5.8 GHz wireless power transmission system was developed and transmission efficiency was measured according to the distance. A transmitter sent the amplified microwaves through an antenna amplified by a power amplifier of 1W for 5.8 GHz, and a receiver was converted to DC from RF through a RF-DC Converter. In the 1W 5.8GHz wireless power transmission system, the converted currents and voltages were measured to evaluate transmission efficiency at each distance where LED lights up to 1m. The RF-DC Converter is designed and fabricated by impedance matching using full-wave rectifier circuit. The transmission-efficiency of the system shows from 1.05% at 0cm to 0.095% at 100cm by distance.