• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.207-207
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• 2008

Modern industry has focused on processing that produce low- loss dielectric substrates used complex micron-sized devices using tick film technologies such as tape casting and slip casting. However, these processes have inherent disadvantages fabricating high density interconnect with embedded passives for high speed communication electronic devices. Here, we have successfully fabricated porous alumina dielectric layer infiltrated with polymer solution by using inkjet printing process. Alumina suspensions were formulated as dielectric ink that were optimized to use in inkjet process. The layer was confirmed by field emission scanning electron microscope (FE-SEM) for measuring microstructure and volume fraction. In addition, the reaction kinetics and electrical properties were characterized by FT-IR and the impedance analyzer. The volume fraction of alumina in porous dielectric alumina layer is around 70% much higher than that in the conventional process. Furthermore, after infiltration on the dielectric layer using polymer resins such as cyanate ester. Excellent Q factors of the dielectric is about 200 when confirmed by impedance analyzer without any high temperature process.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.527-533
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• 1990

The AgI systems containing various mol% of AgBr and CuI were synthesized. X-ray analyses revealed that all synthesized systems had face centered cubic structures. Using impedance analyzer, electrical conductivity measurements of these systems were carried out at temperatures from 20 to 200$^{\circ}C$. From this measurement, it was found that the activation energies of these systems were in the range 0.6∼0.7 eV and the system containing 5 mol% AgBr showed the highest conductivity and the smallest activity energy.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1408-1409
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• 2006

In this paper, poly methyl methacrylate thin films were deposited on a ITO glass substrate using a plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized poly methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. Molecular structures of the ppMMAs were investigated using a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the ppMMA thin films were investigated using a source measurement unit (SMU: Keithley 2400). Relationship between the plasma coupling technique/process parameter and ppMMA thin films properties were investigated.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1347-1348
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• 2007

In this paper, ITO gate electrode surface was modified using $O_2$ plasma and organic gate insulating layers were deposited on the ITO surface using plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. The ppMMAs were investigated using atomic force microscopy (AFM) and a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the organic thin film transistors (OTFTs) were investigated using a source measurement unit (SMU: Keithley 2612). Proposed method can be applied to dry-process to fabricate OTFTs during overall fabricating steps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.18-25
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• 1998

G $d_{0.2}$C $e_{0.8}$ $O_{1.9}$(CGO) for electrolyte and L $a_{0.5}$S $r_{0.5}$Mn $O_3$(LSM50) for cathode in Solid Oxide Fuel Cells(SOFC) were synthesized by citrate process. Specimens were prepared with sintering temperatures at 110$0^{\circ}C$, 120$0^{\circ}C$ and 130$0^{\circ}C$, which were fabricated by slurry coating with citric acid contents. Interfacial resistance was measured between cathode and electrolyte using AC-impedance analyzer. With various citric acid content, the degree of agglomeration for the initial particles changed. Also sintering temperature changed the particle size and the degree of densification of cathode. Factors affecting the interfacial resistance were adherent degree of the electrolyte and cathode, distribution of TPB(three phase boundaries, TPB i.e., electrolyte/electrode/gas phase area) and porosity of cathode. By increasing the sintering temperature, particle size and densification of the cathode were increased. And then, TPB area which occurs catalytic reaction was reduced and so interfacial resistance was increased.sed.sed.d.

• Journal of Korea Multimedia Society
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• v.20 no.10
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• pp.1678-1688
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• 2017

Infiltration is one of detrimental problems occurring in nursing or medical settings. Early detection of infiltration is essential to minimize the risk of injury from infiltration. To perform a preliminary study on the point of care and automated infiltration detection system, bioelectrical impedance was investigated using bioelectrical impedance analyzer. We would like to report experimental results that allow impedance parameters to effectively distinguish infiltration. Electrodes were attached to both sides of the transparent dressing on the fusion site where IV solution was being infused. Then, impedance parameters before and after infiltration were measured as a function of time and frequency. The experimental results are as follows. After infiltration was intentionally induced by puncturing the vein wall with a needle, the resistance gradually decreased with time. That is, when an alternating current having a frequency of 20 kHz was applied to the electrodes, the resistance gradually decreased with time, reflecting the accumulation of IV solution in the extracellular fluid since the current could not pass through the cell membrane. Impedance parameters and equivalent circuit model for human cell were used to examine the mechanism of current flow before and after infiltration, which could be used for early detection of infiltration.

• Journal of Biomedical Engineering Research
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• v.13 no.2
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• pp.133-140
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• 1992

Bioelectrical Impedance method for measuring human body composition is based upon the principle that the electrical conductivity of the fat-free mass (FFM) is far greater than that of the (at. Deter- mination o( impedance was nlade in 30 healthy and obese men aged $40.9{\pm}14.7$yr (mean${\pm}$SD) and 25 healthy and obese women aged $44.0{\pm}10.2$ yr. A commercial impedance body fat analyzer was used with a four electrode arrangement that introduced a painless constant current(ImA at 50 kHz) into the body. Linear relationships were found between impudence values and FFM(r=-0.786) and between weight and FFM(r=0.837). Signigicant increases in the correlation coefficients were ob served when the predicator Hta/z was regressed against FFM(r=0.912) where Ht Is height and Z Is impedance. A linear regression equation, FFM=0.586(Htf/z) +0.317(Weight) -1.674(r=0.977), was found. The correlation coefficient of % body fat between the impedance and infrared methods was 0.898. These data Indicate that the bioelectrical impedance technique is a reliable and valld approach for the estimation of human body composition. This method Is safe, noninvasivr, prouides rapld measure menu, requires little operator skill and subject cooperation, and Os portable. Finally measurement of percent body fat was made possible using both the regression equation and a developed impedance measuring device which measures impedance between wrist and ankle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.229-235
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• 2012

This paper dealt with the fabrication of a partial discharge (PD) analyzer for insulation diagnosis of power facilities like transformers, cables and gas-insulated switchgears. An analytic algorithm for the phase (${\phi}$), the magnitude (q), and the pulse count (n) of PD pulse was designed and a time-frequency (TF) map algorithm was applied in the system to eliminate noises by analyzing the time and the frequency component of signals. All the algorithms were operated by a LabView graphical program. The detection circuit consists of a coupling capacitor, a detection impedance, and a low noise amplifier. A plane-plane and a point-plane electrode system were fabricated to simulate different types of insulation defects. In the experiment, we could easily understand the characteristics of PD pulses using the prototype PD analyzer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.26-34
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• 2007

This Paper describes a chip design technique for body composition analyzer based on the BIA (Bioelectrical Impedance Analysis) method. All the functions of signal forcing circuits to the body, signal detecting circuits from the body, Micom, SRAM and EEPROMS are integrated in one chip. Especially, multi-frequency detecting method can be applied with selective band pass filter (BPF), which is designed in weak inversion region for low power consumption. In addition new full wave rectifier (FWR) is also proposed with differential difference amplifier (DDA) for high performance (small die area low power consumption, rail-to-rail output swing). The prototype chip is implemented with 0.35um CMOS technology and shows the power dissipation of 6 mW at the supply voltage of 3.3V. The die area of prototype chip is $5mm\times5mm$.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.430-436
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• 2000

In this paper, we have studied the effect of constituent ratio NiO, CuO and doped with B-Bi-Zn on proper-ties(microstructure, density, shrinkage, permeability as a function of frequency, etc.) of hexagonal-ferrite for high fre- quency chip-inductor material about several GHz. The permeability were analyzed by impedance analyzer(100 kHz∼ 40 MHz) and network analyzed(30 MHz∼3 GHz). As a result of the characteristics. the B-Bi-Zn glass ceramic was used to lower the sintering temperature for additive as function of frequency from 100kHz to 1.8 GHz showed con-stant tends. The maximum imaginary value of complex permeability was observed near the resonance frequency of 2 GHz.