• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.86-89
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• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.2
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• pp.182-187
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• 1988

Hot carrier induced device degradation characteristics under DC bias stress have been investigated in n-MOSFETs with channel length of 1.2,1.8 um, and compared with those of LDD structure device with same channel length. Based on these results, the device lifetime in normal operating bias(Vgs=Vds=5V) is evaluated. The lifetimes of conventional and LDD n-MOSFET with channel length of 1.2 um are estimated about for 17 days and for 12 years, respectively. The degradation rate of LDD n-MOSFET under the same stress is the lowest at n-region implnatation dose of 2.5E15 cm-\ulcorner while the substrate current is the lowest at the dose of 1E13cm-\ulcorner Thses results show that the device degradation characteristics are basic measurement parameter to find optimum process conditions in LDD devices and evaluate a reliability of sub-micron device.

• Journal of the Korea Safety Management & Science
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• v.17 no.4
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• pp.223-229
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• 2015

In this study, We designed and implemented a assistant device for the standing X-ray views which is the one of the clinical X-ray imaging position. To evaluate the usability of the proposed assistant device, We choose 11 clinical patient postures that are used frequently and applied the postures to 5 volunteers. 11 images was taken from a volunteer for the patient postures. And we conducted a survey on safety and clinical usefulness, the 5 volunteers responded to the safety and 5 experts responded to the clinical usefulness. The survey results show that the volunteers feel more safe and the obtained images are very clear and clinically useful. The result for the image quality is 4.69 of 5(best) and safety is 2.84 of 3(best). It will be very profitable to both patients and hospitals by using the proposed assistant device.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.5
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• pp.249-256
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• 2004

This paper suggests a novel evaluation scheme of protective effectiveness in distribution systems. The adequacy of every parameter in a protective device is evaluated for the setting or correction rules. Then, the protective effectiveness of a device, device-wise effectiveness, is obtained by the combination of the parametric evaluation results. The coordination-wise effectiveness between devices can be calculated by evaluating the parameters which contribute the performance of coordination. The protective effectiveness of the whole system can be obtained by combining the device-wise and coordination-wise effectiveness values. The rules, in this paper, are categorized into three groups; rules for single parameter, rules for coordination between parameters, and rules for coordination between protective devices to form a hierarchical calculation model. The proposed method is applied to a typical distribution network to show its effectiveness.

• Journal of Institute of Control, Robotics and Systems
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• v.9 no.8
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• pp.592-599
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• 2003

As one of the Principal modalities of human sensation, tactile feel is prerequisite for building wide variety of applications such as telemanipulation, virtual reality and medical engineering. A dynamic Braille display device based on a polymer actuator is presented. The actuator, often called artificial muscle actuator has advantageous features over the existing methods in terms of intrinsic softness, ease of fabrication, cost-effectiveness and miniaturization. The principles of actuation with dielectric elastomer is introduced, and necessary considerations on the design of a tactile display device are discussed. The design of the device is described in detail including the fabrication process and driving electronics. Also, preliminary results of experiments are given to evaluate its performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.3
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• pp.365-371
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• 2010

The fins of a missile which is folded within a canister are deployed according to a command during the missile flight. The aerodynamic load generated by operating environments such as missile flight speed, platform movement speed and wind acts as an anti-deploying force and prevents the fins from deploying. As the diversification of platforms and the higher speed of missiles need a larger deploying force but the space for operating the fin deploying device is getting narrower, the new design concepts are required for developing such a device. In this study, a pneumatic device for deploying missile fins is designed and its characteristics are verified through experiments and analyses.

• Journal of Power Electronics
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• v.9 no.1
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.170-173
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• 2003

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.306-309
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• 2000

In this work, we investigated A1 cluster deposition on Al (100) surface using molecular dynamics simulation. A result of simulations showed that large cluster with low energy was proper for good surfaced-films without craters at the low temperatures. We investigated the maximum substrate temperature and the time taken for substrate temperature to reach its maximum as a function of cluster size in the case of the same total energy and in the case of the same energy Per atom. The correlated collisions play an important role in interaction between energetic cluster and surface, and as cluster size and cluster energy increases, the correlated collisions effect affects interaction between energetic cluster and surface.