• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.87-91
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• 2019

As a highly conductive and transparent electrode, ITO/Ag/ITO multilayers are fabricated using an in-line sputtering method. Optimal thickness conditions have been investigated in terms of the optical transmittance and the electrical conductance. Considering the optical properties, in this study, the experimental characteristics are analyzed based on theoretical phenomena, and they are compared with the simulated results. The simulations are based on the finite-difference-time-domain (FDTD) method in solving linear Maxwell equations. Consequently, the results showed that ITO/Ag/ITO multilayer structures with respective thicknesses of 39.2 nm/10.7 nm/39.2 nm are most suitable with an average transmittance of about 87% calculated for wavelengths ranging from 400-800 nm and a sheet resistance of about $7.1{\Omega}/{\square}$.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.272-278
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• 2003

We studied patterned ITO layers of PDP thin films on glass substrates using spectroscopic ellipsometry. The optical property of ITO is expressed with the optical model based on two Lorentz oscillators. The effect of patterned ITO is calculated by taking the weighted average of reflectance in proportion to ITO coverage. The relative coverage of ITO is determined by using the model analysis of spectroellipsometric data. The difference of ITO coverage obtained by the best-fit model analysis of ellipsometric spectra to the expected one is critically examined and suggestions are made to minimize the observed discrepancy.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.100-104
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• 2019

The 'ITO/Ag/ITO' multilayers as a highly conductive and transparent electrode, even with the optimum thickness conditions, the transmittances were much lower than those of a single ITO layer on some ranges of the visible wavelength. In order to improve the transmittance, Ag layer was formed with mesh structure. Where, the thickness of the Ag layer was about 10 nm and the space between the Ag lines was varied from 2.9 ㎛ to 19.6 ㎛ with the fixed Ag width of about 1.2 ㎛ in order to vary an open ratio of the Ag mesh structure. The transmittance and sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the open ratio of about 86%, in the ITO/Mesh-Ag/ITO multilayer structure, the transmittance was nearly same as the single ITO layer and the sheet resistance was about 62.3 Ω/.

• Applied Chemistry for Engineering
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• v.19 no.1
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• pp.37-44
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• 2008

The multi-layer PET film of ITO/ATO was prepared by a wet coating method to obtain the transparent film with a high conductance at low cost. ITO nano-particles were synthesized by a SAS method at 15 MPa and $50^{\circ}C$, where optimized rate of In/Sn was 65. Average diameter and resistivity of ITO obtained from SAS are $15{\pm}2nm$ and $4{\times}10^4{\Omega}{\cdot}cm$. Coating solution was prepared at pH 10. Roughness (Ra), resistivity, and transmissivity of ATO film on PET are 9 nm, $5.5{\times}10^6{\Omega}{\cdot}cm$, and 91%. The multi-layered film of ITO/ATO was obtained by solution including 0.1, 0.5, 1.0, and 2.0 ITO wt% on ATO layer. Roughness (Ra) of multi-layered film with 0.1, 0.5, 1.0, and 2.0 ITO wt% is 4, 10, 12, and 16 nm, respectively. Corresponding resistivity with an increasing ITO concentration is $3.7{\times}10^6$, $2.4{\times}10^6$, $8{\times}10^5$, and $2{\times}10^5{\Omega}{\cdot}cm$. Transmissivity of ITO/ATO film decreases as 89, 88, 86, and 82% with an increasing ITO concentration as 0.1, 0.5, 1.0, and 2.0 wt%.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.516-519
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• 2011

Indium tin oxide (ITO) coatings were made using an ITO slurry and an ITO sol. This was achieved by dispersing nanosized ITO powder in a mixed solvent without any dispersant and developing an adhesive ITO sol from indium acetate and tin tetrachloride in a mixture of DMF and n-butanol. Coating was carried out in one step by spin coating an ITO slurry, which was then followed by an ITO sol over it. Here, the sol penetrates into the nano ITO particle layers to make them adhere to each other as well as to a glass substrate. This is then followed by sintering at 500$^{\circ}C$ for 1 h to produce a uniform film consisting of ITO particles of about 50 nm and 10 nm. ITO films were obtained with sheet resistances from 450 to 1500 ohm/${\Box}$ by varying spin speed and concentration. Transmittance is higher than 90% at 550 nm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.546-550
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• 2002

In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.213-216
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• 2001

The use of a thin film of indium between the ITO and the $n^{+}$-InP contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. ITO/$n^{+}$-InP ohmic contact was successfully achieved by the deposition of Indium and thermal annealing. The specific contact resistance of about 6.6$\times$$10^{-4}$$\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to ITO/$n^{+}$-InP contact without the deposition of Indium between ITO and $n^{+}$-InP, it exhibited schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with that of InP/InGaAs HBTs with the opaque emitter contacts.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.2-47.2
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• 2011

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.212-213
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• 2004

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.565-571
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• 1999

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrode in dispaly devices were investigated. Plasma diagnostic and surface analysis tools were used to understand etch reaction mechanism. The etch rate of ITO was increased by the increase of reactive radicals such as H and $CH_3$ with the addition of moderate amount of $CH_4$ to Ar. However, the addition of excess amount of $CH_4$ decreased possibly due to the increased polymer formation on the ITO surface being etched. The increase of source power and bias boltage increased ITO etch rates but it decreased selectivities over under-layers $(SiO_2, Si_3N_4)$. The increase of working pressure up to 20mTorr also increased ITO etch rates, however the further increased of the pressure decreased ITO etch rates. From the analysis of XPS, a peak related to the polymer of hydrocarbon was observed on the etched ITO surface especially for high $CH_4$ conditions and it appears to affect ITO etch rates.