Browse > Article

Fabrication of InP/InGaAs HPT's with ITO Emitter Contacts  

Kang, Min-Su (LG電子 技術院 유기EL 事業擔當 모델開發그룹)
Han, Kyo-Yong (嶺南大學校 電子情報工學部)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.11, 2002 , pp. 546-550 More about this Journal
Abstract
In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.
Keywords
HPT; ITO; ohmic contact; TLM; HBT;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. Fukano, Member, IEEE, Y. Takanashi, Member, IEEE, and M. Fujimoto, Member, IEEE, 'High-Speed InP-InGaAs Heterojunction Phototransistors Employing a Nonalloyed Electrode Metal as a Reflector', IEEE Journal of Quantum Electronics, Vol. 30, No. 12, December(1994)   DOI   ScienceOn
2 Paul Freeman, Xiangkun Zhang, Igor Vurgaftman, Jasprit Singh, Member, IEEE, and Pallab Bhattacharya, Fellow, IEEE, 'Optical Control of 14GHZ MMIC Oscillators Based on InAlAs/InGaAs HBT's with Monolithically Intergrated Optical Waveguides', IEEE Transactions on Electron Devices, Vol. 43, NO. 3, March(1996)   DOI   ScienceOn
3 Shabbir A. Bashar, and Ali A. Rezazadeh , Member, IEEE. 'Optically Transparent ITO Emitter contacts in the Fabrication of InP/InGaAs HPTs', IEEE Transactions On Microwave Theory and Techniques. Vol. 43, No. 9, September (1995).   DOI   ScienceOn
4 S. A. Basher et al, 'Fabrication and spectral response analysis of AlGaAs/GaAs and InP/InGaAs HPTs with transparent ITO emitter contacts', IEE proc.- Optoelectron, Vol. 143, No.
5 Mheical Y. Frankel et al, 'Analysis of ultrafast photo carrier transport in AllnAs-GalnAs heterojunction bipolar transistor', IEEE J. Quantum Electron.,Vol. 31, no. 2, pp278-285, February (1995)   DOI   ScienceOn
6 U. Eriksson, P. Evaldsson, J. Wallin, B. Stalnacke, S. Lourdudoss, and B. Willen, 'Vertical integration of an InGaAs/InP HBT and a 1.55${\mu}m$ strained MQW po-substrate laser', IEE Proc.-Optoelectron., Vol. 143, no 1, pp 107-109, February 1996   DOI   ScienceOn
7 Fritz Schuermeyer, Peter J. Zampardi, and Peter M. Asbeck. 'InP-Based HBTs For Optical Signal Detection', Electrochemical Society Proceedings Volume 98-2.
8 Minoru Ida, Member, IEEE, Shoji Yamahata, Member, IEEE, Kenji Kurishima, Hiroshi Ito, Member, IEEE, Takashi Kobayashi, and Yutaka Matsuoka, Member, IEEE, 'Enhancement of fmax in InP/InGaAs HBT's by Selective MOCVD Growth of Heavily-Doped Extrinsic Base Regions', IEEE Transactions on Electron Devices, Vol. 43, NO. 11, November(1996)
9 Richard N. Nottenburg, Member, IEEE, Y. K. Chen, Morton B. Panish, Senior Member, IEEE, D. A. Humphrey, and R. Hamm, 'Hot-Electron InGaAs/InP Heterostructure Bipolar Transistors with fT of 110GHZ' IEEE Electron Device Letters, Vol. 10, NO. 1. January(1989)   DOI   ScienceOn