• Composites Research
• /
• v.24 no.6
• /
• pp.12-17
• /
• 2011

Interfacial durability and electrical properties of CNT or ITO coated PVDF nanocomposites were investigated for self-sensor and micro actuator applications. Electrical resistivity of nanocomposites for the durability on interfacial adhesion was measured using four points method via fatigue test under cyclic loading. CNT/PVDF nanocomposite exhibited lower electrical resistivity and good self-sensing performance due to inherent electrical property. Durability on the interfacial adhesion was good for both CNT and ITO/PVDF nanocomposites. With static contact angle measurement, surface energy, work of adhesion, and spreading coefficient between either CNT or ITO and PVDF were obtained to verify the correlation with interfacial adhesion durability. The optimum actuation performance of CNT or ITO coated PVDF specimen was measured by the displacement change using laser displacement sensor with changing frequency and voltage. The displacement of actuated nanocomposites decreased with increasing frequency, whereas the displacement increased with voltage increment. Due to nanostructure and inherent electrical properties, CNT/PVDF nanocomposite exhibited better performance as self-sensor and micro actuator than ITO/PVDF case.

• Proceedings of the Korea Information Processing Society Conference
• /
• 2003.05c
• /
• pp.1841-1844
• /
• 2003

어떤 아웃소싱에서건 성과 측정을 못하면 관리할 수 없다. 기존의 ITO 서비스 측정 기준이 IT중심의 SLA이었다면, 본 논문에서 말하려는 ITO 서비스 측정 방법은 ITO 서비스에 대한 비즈니스측면의 가치 평가를 시도한 것이다. 기업의 성과평가를 위해 적용되는 BSC 개념을 ITO서비스에 도입하여 IT BSC체계를 확립하고, 이를 조직내 의사결정 레벨로 관리함으로써 ITO서비스 측정 지표값이 조직의 비즈니스 성과에 영향을 준다는 근거를 마련하고자 하는 것이다. 이로인해 사업목표와 연계된 ITO서비스 측정 기준을 마련함으로써, IT예산 산정의 합리적 근거를 확보할 수 있다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.254-257
• /
• 2008

We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.9
• /
• pp.1-10
• /
• 2002

We have done various treatments of indium tin oxide (ITO) surface for organic light-emitting diodes (OLEDs), and investigated the surface states by different surface treatments using atomic force microscopy (AFM) and Auger electron spectroscopy (AES). We have fabricated OLEDs deposited by ultra-high vacuum molecular beam deposition system and studied the characteristics of the OLEDs. We have observed the dramatical improvement of the performance of OLEDs fabricated on ITO substrates treated by $O_2$ plasma treatment reduces the carbon comtamination of ITO surfaces and increases the work function of ITO.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.5
• /
• pp.165-168
• /
• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.5
• /
• pp.242-245
• /
• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.6
• /
• pp.261-266
• /
• 2003

We investigated the effect of oxygen plasma treatment of indium-tin oxide(ITO) surface on the performance of electroluminescence(EL) devices. ITO surface treated oxygen plasma has been analyzed using atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS), to investigate the relations between the properties of the ITO surface and the properties of the current-voltage-luminance(I-V-L) characteristics of the fabricated OLED with the structure of ITO(plasma treatment) / TPD / Alq$_3$/ Al. It is found that the oxygen plasma treatment of ITO anode improve the hole injection of the OLED due to the modification of the surface states. The treated ITO anode nay be low voltage with high luminance efficiency.

• Journal of Sensor Science and Technology
• /
• v.31 no.2
• /
• pp.90-95
• /
• 2022

The effect of the structure of an ITO nanoparticle film sensor on its performance was studied. A printed ITO film (P-ITO film) was fabricated on a flexible polyethylene terephthalate (PET) substrate, and the contact resistance of the electrode and sensor response change were clarified according to the detection position. The contact resistance between Ag and P-ITO was observed to be -204.4 Ω using the transmission line method (TLM), confirming that a very good ohmic contact is possible. In addition, we confirmed that the contact position of the analyte had a significant influence on the response of the sensor. Based on these results, the performance of the four types of sensors was compared. Consequently, we observed that 1) optimizing the resistance of the printed film, 2) optimizing the electrode structure and analyte input position, and 3) optimizing the electrode area are very important for fabricating a metal oxide nanoparticle (MONP) sensor with optimal performance.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1421-1423
• /
• 1996

In this study, the effect of solar cell cover glass on the solar cell performance is evaluated. Silicon solar cell (active area:4*6cm, efficiency:12.6% at AMO condition) is used for this study. ITO(Indium tin Oxide) film thickness of the ITO/AR/substrate glass/solar cell structure samples are $40{\AA}$, $60{\AA}$, $160{\AA}$, $240{\AA}$ respectively. The solar cell maximum output power on the stacking structure variations showed 465mW in the AR/ITO/substrate glass/solar cell, and minimum output power showed 403mW in the AR/substrate glass/solar cell. The maximum output power of the solar cell on the ITO thickness variations of the ITO/AR/substrate glass/solar cell showed 460mW at $40{\AA}$ then decrease output power as ITO thickness increase. For environment tests, all samples are exposed UV light in the vacuum chanber. The output power degradation of AR(UVR)/substrate glass/solar cell stacking structure is small compared with ITO/AR(UVR)/substrate glass/solar cell stacking structure.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.9
• /
• pp.50-55
• /
• 1997

In order to improve the electrical performance of ITO/InP solar cells, sulfur passivation technique was employed using (N $H_{4}$)$_{2}$ $S_{x}$ solution. Passivation effects were analyzed by measuring the short circuit current density ( $J_{sc}$ ) of solar cells and photoluminescence (PL) of ITO/InP interfaces. This paper firstly reports the sulfur passivation effects by investigating the correlation between the PL intensity and the short circuit current. Generally, PL intensity and the short circuit current of sulfur passivated sampels wer eincreased, and showed the same trend. Especially, samples prepared at 60.deg. C (N $H_{4}$)$_{2}$ $S_{x}$ solution exhibited the highest $J_{sc}$ and PL intensity. These results demonstrated that the short circuit currents was influenced by the ITO/InP interface states.