• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.11a
• /
• pp.135-135
• /
• 2001

• Journal of the Korean Electrochemical Society
• /
• v.12 no.1
• /
• pp.81-87
• /
• 2009

An indium-tin oxide (ITO) coated spinel manganese oxide (${LiMn_2}{O_4}$, LMO) is prepared and its high-temperature ($55^{\circ}C$) cycle performance and rate capability are examined. A severe electrolyte decomposition and film deposition is observed on the un-coated ${LiMn_2}{O_4}$ cathode, which leads to a significant electrode polarization and capacity fading. Such an electrode polarization is, however, greatly reduced for the ITO-coated (> 2 mol%) LMO cathode, which leads to an improved cycle performance. This can be rationalized by a suppression of electrolyte decomposition, which is in turn indebted to a decrease in the direct contact area between LMO and electrolyte. The suppression of film deposition on the ITO-coated LMO cathode is confirmed by infra-red spectroscopy. The rate capability is also improved by the surface coating, which may be resulted from a suppression of resistive film deposition and high electric conductivity of ITO itself.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.4
• /
• pp.150-155
• /
• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.140-140
• /
• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.427-431
• /
• 2000

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) and glass substrates have been deposited by a dc magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by sputtering power, oxygen partial pressure and films thickness. As the experimental results, the XRD patters of ITO films are influenced by sputtering power and pressure. As the power and pressure are increased, (411) peak is grown suddenly. the electrical resistivity is also increased, as the sputteing power and pressure are increased. Transmittance of ITO thin films in visible light ranges is lowered with increasing the sputtering power and film thickness. Reflectance of ITO films in infia-red region is decreased, as the power and pressure is increased.

• Journal of the Korean institute of surface engineering
• /
• v.33 no.5
• /
• pp.349-355
• /
• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.2
• /
• pp.82-86
• /
• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• Korean Journal of Optics and Photonics
• /
• v.13 no.3
• /
• pp.204-208
• /
• 2002

We investigate the dependence of indium tin oxide (ITO) thin films on the mixing ratio of Ar:O$_2$ produced by an ion-gun and $O_2$ injected inside the divergence angle of the ion-beam to optimize their sheet resistance and transmittance. The substrate is placed outside the divergence angle, and the films are grown by ion mixing with ITO evaporated at room temperature. From the XRD measurement ITO films are found to be amorphous. ITO thin films show the highest transmittance of 85% at 3$\times$10$^{-5}$ Torr of 0$_2$ and Ae:O$_2$ ratio of 40:60, and the smallest sheet resistance of 132 $\Omega$/$\square$at 1$\times$10$^{-5}$ Torr of $O_2$ and As:O$_2$ ratio of 40:60.

• Journal of the Korean Vacuum Society
• /
• v.9 no.1
• /
• pp.30-35
• /
• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• Journal of Sensor Science and Technology
• /
• v.16 no.3
• /
• pp.229-233
• /
• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.