• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.205-211
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• 2012

We investigated the optical and hydrophobic properties of the deposited silver (Ag) zinc oxide (ZnO) nanorods (NRs) on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates (i.e., ITO/PET). The ZnO NRs were grown by an electrochemical deposition using a sputtered ZnO seed layer and the Ag was deposited by using a thermal evaporator. For comparison, the same fabrication process was carried out on the bare ITO/PET without ZnO NRAs. Due to the discrete surface of ZnO NRs, the deposited Ag was formed as nano-scale particles, while the Ag became film-like for bare ITO/PET. In order to control the size and amount of Ag particles, the Ag deposition time was changed from 100 to 600 s. When the deposition time was increased, the Ag particles became larger and denser, and the absorptance was increased. This enhanced absorptance may be due to the localized surface plasmon resonance of Ag particles. Furthermore, the relatively high hydrophobicity was observed for the deposited Ag on the ZnO NRs/ITO/PET. These improved optical and surface properties are expected to be useful for flexible photovoltaic and optoelectronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.81-83
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• 2000

Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.742-748
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• 2005

Transparent conductive indium-tin oxide (ITO) films are widely used as transparent electrodes for flat panel displays. Many of the ITO films for practical use have been prepared by magnetron sputtering, chemical vapor deposition, electron beam evaporation, etc. An oxide target composed of 10 wt% $SnO_2$ and 90 wt% $In_2O_3$ has been deposited onto polycyclic olefin polymer (POP) substrate by electron beam evaporation. POP has a higher glass transition temperature ($Tg=330^{\circ}C$) than other conventional polymers. In this study, the effects of substrate temperature and the $O_2$ introduction flow rate were investigated in terms of physical, electrical and optical properties of deposited ITO films. We investigated the effects of processing variables such as substrate temperature and the oxygen introduction flow rate. The best electrical and optical properties of deposited ITO films obtained from this study were electrical resistivity value of ${\rho}=1.78{\times}10^{-3}{\Omega}{\cdot}cm$ and optical transmittance of about 85% at 8 sccm (Standard Cubic Centimeter per Minute) $O_2$ introduction flow rate, $5{\AA}/sec$ deposition rate, $1000{\AA}$ deposited ITO thickness and $200^{\circ}C$ substrate temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.172-172
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• 2009

전자부품 소재의 경량화 및 연성화 경향에 따라 고분자 소재의 수요가 증가하고 있으며 이에 따라 각종 디스플레이 소자의 투명 도전막으로 사용되는 ITO(Indium-tin Oxide) 피막의 저온 박막 성장에 대한 관심이 증가하고 있다. 본 연구에서는 PET 기판의 전처리 및 후처리 조건에 따라 저온에서 ITO 피막을 제조하고 전처리 및 후처리 조건이 ITO 피막의 면저항 및 투과율 그리고 결정성에 미치는 영향에 대해서 연구하였다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.231-238
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• 2015

In this paper, we have studied a sheet resistance property of N- and P-type thin films deposited on ITO glass by use of RF magnetron sputtering. The N-type samples which has the deposition condition of 150W RF power, shows the highest current value, and the samples deposited for 15 minutes shows a better Ohmic contact property. As the substrate temperature, RF power and deposition time are increased, the sheet resistance of the samples is increased, and the low sheet resistance sample shows a better I-V property. The P-type samples shows the highest current value by 150W RF power condition as similar as N-type samples. and the samples deposited for 20 minutes shows a better ohmic contact property. The sheet resistance of the both types samples is increased as increasing RF power and deposition time.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.64 no.4
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• pp.277-280
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• 2015

In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of $300^{\circ}C$ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of $250^{\circ}C$.

• Solar Energy
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• v.7 no.2
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• pp.7-13
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• 1987

Indium-Tin-Oxide (ITO)/Selenium heterojunction solar cells which fabricated by vacuum deposition technique and annealing process has been investigated. Prior to the Selenium deposition, a thin tellurium layer (about $10{\AA}$) was deposited onto the ITO layers to provide a sufficient mechanical bond between the Oxide and Selenium layers. The amorphous Selenium layer was deposited onto the Te-ITO layers, and then the crystallization of the amorphous Selenium was carried out using a hot plate at about $180^{\circ}C$ for 4 min. Efficient Selenium solar cells with conversion efficiency as high as 4.52% under AM1 condition has been fabricated in polycrystalline Selenium layer ($6{\mu}m$). The optimum data in manufacturing Se solar cell was listed in table.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.205-210
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• 2000

Lead titanate thin films were fabricated on Si(100) wafer and ITO-coated glass substrates by metal organic chemical vapor deposition using ultrasonic spraying. When the ratio (Ti/Pb) of starting materials was 1.2, the films deposited on Si wafer had a single perovskite phase. The films deposited on ITO-coated glass had higher growth rate than that on Si wafer. As deposition temperature was increased from $530^{\circ}C$ to $570^{\circ}C$, dielectric constant was increased due to the increase of crystallinity and grain size. At $570^{\circ}C$, dielectric constant and dielectric loss of the films were 205 and 0.016, respectively. When the deposition temperature is higher than $600^{\circ}C$, dielectric constant was decreased.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.80-85
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• 2001

$Hg_{1-x}Cd_xTe$(MCT) thin films were grown onto ITO glass and titanium plate by stationary cathodic electrodeposition in aqueous solution contained $CdSO_4$, $TeO_2$, and $HgCl_2$. During deposition two main fabrication parameters were taken into account deposition potential and growth temperature. MCT films deposited by varying two parameters were studied by X-ray diffraction, electron probe micro analyser(EPMA) and scanning electron microscope measurements. It was shown by XRD and EPMA measurements that the structure of MCT films was zinc blonde and the composition of MCT films can be controlled with the deposition potential.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.473-478
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• 2006

High quality indium tin oxide (ITO) thin films have been prepared by DC magnetron sputtering technique. By controlling the deposition parameters such as substrate temperature and oxygen flow rate, we were able to minimize the negative ion damage during the deposition. Films pr데ared under such conditions were found to posses an excel]ent electrical resistivity of $1.6\times10^{-4}{\Omega}cm$ and also found to have a optical transmission above 90%. We also observe that, increasing the oxygen now rate above 4 sccm leads to an increase in electrical resistivity of the films while the transmission was found to saturate with the increase in the oxygen gas flow.