• 한국응용과학기술학회지
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• 제31권3호
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• pp.359-366
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• 2014

포화지방산과 인지질(DMPC)혼합 LB막에 대한 전기화학적 특성을 조사하였다. 포화지방산과 DMPC 혼합 단분자 LB막은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 전기화학적 특성은 $NaClO_4$ 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업 전극)으로 순환전압전류법을 사용하여 측정하였다. 그 결과 포화지방산과 인지질(DMPC)의 LB막은 순환전압전류도표로부터 산화전류로 인한 비가역공정으로 나타났다. 포화지방산과 인지질(DMPC)혼합(몰비 1:1) LB막(C14, C16, C18, C20)에서 확산계수(D)는 0.05 N $NaClO_4$에서 각각 $1.2{\times}10^{-3}$, $2.1{\times}10^{-3}$, $1.4{\times}10^{-4}$ 및 $1.1{\times}10^{-3}cm^2/s$로 산출되었다.

• Current Photovoltaic Research
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• 제3권1호
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• pp.5-9
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• 2015

Absorption and luminescence characteristics of disperse red-19 (DR-19) and $TiO_2$ composite have been investigated with various poling electric field strengths. Two step synthetic processes were employed to employ the DR-19 to the $TiO_2$ sol-gel. Firstly, urethane bond formation between DR-19 (-OH) and 3-isocyanatopropyl triethoxysilane (ICPTES, -N=C=O) performed (ICPDR) prior incorporation to the $TiO_2$ sol-gel. Secondary, the hydrolysis of the ethoxy group from the ICPTES and condensation reaction between silanol groups from ICPTES and $TiO_2$ sol-gel were performed. The ICPDR and $TiO_2$ sol-gel ($DRTiO_2$) were mixed and stirred for several days. The composite was coated to the ITO coated glass substrate. Corona poling were performed before drying the composite with various electric field strengths. The absorption intensity decreased with the increase of the poling field strength, which resulted in the increase of poling efficiency. The photoluminescence also decreased as the poling field strength increased. There is long luminescence tail for the poled $DRTiO_2$ film compared with unpoled $DRTiO_2$ film. The luminescence long tail indicates that the self-trapped excitons and polarons were generated when the $DRTiO_2$ film was poled with electric field.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.1-6
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• 2007

본 연구에서는 유기박막트랜지스터(OTFT, Organic Thin film Transistor)에 응용을 위해 용액(soluble) 공정을 통하여 제작된 pentacene 박막의 특성을 분석하여 pentacene 박막의 OTFT 소자에 적용 가능성을 조사하였다. Pentacene을 용해시키기 위해 toluene과 chloroform의 두 종류의 용제를 사용하였으며, 이들 용제가 pentacene 박막의 특성에 미치는 영향을 연구하였다. Pentacene 용액은 ITO/Glass 기판위에 spin-coating 법으로 유기 반도체 박막을 제작하여 각 박막의 표면형상, 결정화 특성과 전기적 특성을 조사하였다. AFM을 이용한 표면 형상 관찰 결과 chloroform을 이용한 pentacene 박막이 toluene을 이용한 박막에 비하여 표면 거칠기가 개선되는 경향을 보여주었다. XRD 회절 분석 결과 모든 pentacene 박막 시료에서 결정화가 되지 않은 비정질 형태를 보여주었다. Hall effect measurement 분석 결과 chloroform 용제를 이용한 pentacene 박막이 toluene용제를 사용한 시료에 비해 보다 우수한 전기적 특성을 나타내었다. 즉, chloroform에 용해된 pentacene 박막의 경우 전하농도와 이동도는 $-3.225{\times}10^{14}\;cm^{-3}$와 $3.5{\times}10^{-1}\;cm^2\;V^{-1}{\cdot}S^{-1}$를 각각 나타내었다. 또한 비저항은 약 $2.5{\times}10^2\;{\Omega}{\cdot}cm$를 얻었다.

• 산업융합연구
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• 제21권3호
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• pp.189-194
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• 2023

최근에 유연 전자소자에 대한 다양한 연구가 이루어지고 있다. 본 연구에서 유연 전자소자용 금속기반의 투명 전도막으로 Ag 나노와이어로 그 가능성을 평가하였다. 이를 위해 신개념의 브러시 코팅법과 상압플라즈마 기반의 아르곤 플라즈마 증발법으로 Ag 나노 물질을 글라스에 형성시켰다. 먼저 브러시로 Ag 용액을 글라스에 코팅하고, 남아있는 용매는 상압플라즈마로 제거한다. 이 용매 증발 과정에서 상압플라즈마와 용매의 반응에 의해 소리가 발생하기 때문에 용매의 남아있는 정도를 확인할 수 있다. 막의 코팅 횟수에 따른 반사도, 투과도, 흡수도와 같은 광특성 및 전기적인 결과들을 관찰하기 위하여 최대 5번 코팅하여 그 결과들을 분석하였다. 광에 의한 Ag 나노와이어와의 상호작용을 조사할 목적으로 빛의 파장을 200nm부터 800nm까지 변화시키면서 반사도 및 투과도를 측정하였으며, 반사도와 투과도 모두 5번 코팅한 샘플에서 가장 큰 변화를 나타내었다. 특히 흡수도의 경우 반사도나 투과도의 데이터와는 다르게 코팅에 따라 Ag 나노와이어의 빛에 대한 흡수도 증가 추이를 명확하게 확인할 수 있었다. 전기적인 특성은 4번 이상 코팅했을 때부터 큰 변화가 있었으며, 특히 5번 진행시 kΩ/cm2보다 낮아진 저항값을 보였다. 이러한 광 및 전기적인 결과들을 기반으로, 향후 전자소자에 적용하여 투명 전도막으로의 가능성을 검증할 계획이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.193-197
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• 2004

The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.148-154
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• 2020

Highly ordered mesoporous manganese oxide films were electrodeposited onto indium tin oxide coated (ITO) glass using sodium dodecyl sulfate (SDS) and ethylene glycol (EG) which were used as a templating agent and stabilizer for the formation of micelle, respectively. The manganese oxide films synthesized with surfactant templating exhibited a highly mesoporous structure with a long-range order, which was confirmed by SAXRD and TEM analysis. The unique porous structure offers a more favorable diffusion pathway for electrolyte transportation and excellent ionic conductivity. Among the synthesized samples, Mn₂O₃-SDS+EG exhibited the best electrochemical performance for a supercapacitor in the wide range of scan rate, which was attributed to the well-developed mesoporous structure. The Mn₂O₃ prepared with SDS and EG displayed an outstanding capacitance of 72.04 F g^-1, which outperform non-porous Mn₂O₃ (32.13 F g^-1) at a scan rate of 10 mV s^-1.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.