• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.1-142.1
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• 2018

This research presents a new field effect transistor (FET) by using liquid crystal gate dielectric with remote gate. The fabrication of thin-film transistors (TFTs) was used Indium tin oxide (ITO) for the source, drain, and gate electrodes, and indium gallium zinc oxide (IGZO) for the active semiconductor layer. 5CB liquid crystal was used for the gate dielectric material, and the remote gate and active layer were covered with the liquid crystal. The output and transfer characteristics of the LC-gated TFTs were investigated.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.50.2-50.2
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• 2010

Indium Tin Oxide (ITO)는 투과도가 높고, 전기 전도도가 뛰어나 TFT, 태양전지 등 여러 가지 산업에서 전극의 재료로 널리 사용되고 있다. 전극의 재료로써 가장 중요하게 고려되어야 할 사항 중의 하나는 전극과 접촉하는 물질과의 접촉 저항이다. 특히, 태양전지에서 높은 접촉 저항은 셀을 직렬저항 요소를 증가시켜 태양전지의 효율 저하를 가져 온다. 본 연구에서는 ITO를 실리콘 태양전지에 적용하기 위하여, ITO - n-type emitter간, ITO - Ag 간의 접촉 특성을 Transfer Length Method(TLM)을 통하여 분석하였다. p-type 실리콘의 전면을 도핑하여 pn접합을 형성한 후, 그 위에 ITO 패턴을 형성하여 ITO-emitter 간의 접촉 특성을 측정하였고, 두껍게 증착한 SiNx 박막 전면에 ITO를 증착한 후, Ag 패턴을 형성하여 ITO-Ag간의 접촉 특성을 측정 하였다. 측정 결과, ITO와 emitter 간의 접촉 비저항은 $0.9{\Omega}-cm^2 $을 나타내었고, ITO와 Ag와의 접촉 비저항은 $0.096{\Omega}-cm^2 $을 나타내었다.

• Resources Recycling
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• v.22 no.2
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• pp.3-10
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• 2013

Indium is one of the rare metals, and it has been used mainly for preparation of indium tin oxide (ITO). This review investigated the process parameters and the merits and demerits of several methods to recover indium from the leaching solution of secondary resources, such as solvent extraction, ion exchange, and precipitation. D2EHPA has been used mostly as a cationic extractant for indium extraction in moderate acid solutions, while amine extractants are used in strong hydrochloric acid solution. Since the loading capacity of resins for indium is generally small, ion exchange has some advantage over solvent extraction only when the concentration of indium is low.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.140-140
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• 1999

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.146-150
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• 2014

As a method of simple patterning of transparent conductive oxide (TCO) films deposited on flexible substrates, laser direct etching was carried out on TCO films sputtered on polycarbonate (PC) substrates. As a result of different binding energies in TCO films, indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) were more easily etched than zinc oxide with different $Nd:YVO_4$ laser beam conditions.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.55-59
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• 2005

ITO/Ni/ITO thin films were deposited on the PET by RF magnetron sputtering. Dependance of the process parameters such as deposition pressure, positions of Ni layer, on the transmittance, reflectance and sheet resistance of ITO/Ni/ITO film were investigated. When the Ni layer is placed at the center of ITO and deposition pressure is low, ITO/Ni/ITO films showed better optical and electrical properties. At these conditions, the transmittance, reflectance and sheet resistance of the ITO film were $90\%,\;0.38\%$ and $185\Omega/\Box$ respectively.

• Resources Recycling
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• v.23 no.2
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• pp.53-60
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• 2014

In order to separate Indium and Tin from spent indium tin oxide (ITO) sludge, direct hydrochloric acid leaching and thermal reduction followed by HCl leaching were applied. In case of direct leaching of spent ITO, leaching rate of In and Sn was 18.5% and 19.95%, respectively. Whereas, in case of thermal hydrogen treatment of ITO sludge at different temperatures such as $700^{\circ}C$, $800^{\circ}C$, $900^{\circ}C$ and $1100^{\circ}C$, followed by HCl leaching, we obtained the result of more than 97% leaching rate of Sn. Specially, thermal treatment at $800^{\circ}C$ showed the highest leaching rate of 98.2% of Sn. Precipitation method was used for separation and recovery of Sn from leached mixed solution. If the solution pH were adjusted 2.0, 99.69% of Sn precipitated and 10.3% of In was precipitated. This confirmed the possibility of separation of Sn and In from leached solution by precipitation method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.64-64
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• 2008

연속공정이 가능한 Roll to Roll sputter system을 이용하여 플렉시블 indium tin oxide(ITO) 투명전극을 PET(polyethlyene terephthalate) 기판위에 성막하였다. 연속 성막공정을 위해 Roll to Roll sputter system에서의 unwinder roller와 rewinder roller를 이용한 servomotor의 rolling으로 기판의 움직임이 완벽히 제어되었으며, 외부 응력으로 부터의 안정성 및 성막 공정 시의 PET 기판의 열적 변형을 최소화하기 위한 접촉식 냉각방식의 cooling system을 main drum으로 사용하였다. 또한 고분자 기판과 투명전극 사이의 adhesion을 향상시키기 위한 전처리 공정으로 gridless linear ion beam source를 pretreatment system으로 구축하였다. 이렇게 제작된 Roll to Roll sputter system을 이용하여 PET 기판위에 연속공정을 통해 ITO 투명전극을 성막하였다. 성막된 플렉시블 ITO/PET 투명전극은 XRD, HREM, SEM 분석을 통하여 main drum의 cooling에 의해 완전한 비정질 구조를 나타내었음을 확인할 수 있었으며, 비록 Roll to Roll sputter system을 통하여 상온에서 성막 되었음에도 불구하고 최적화 된 조건에서 가시광선 영역 83.46 %의 높은 광투과도 값과 47.4 Ohm/square의 비교적 낮은 먼저항 값을 얻을 수 있었다. 또한 Bending test 결과를 통하여 ion source의 전처리 공정으로 굽힘/평의 반복적 응력에 따른 전기적 특성 열화를 최소화 할 수 있음을 보였다. 최적화된 플렉시블 투명전극을 이용하여 P3HT:PCBM 기반의 플렉시블 유기태양전지를 제작하였으며, 제작된 유기태양전지로부터 1.88%의 power conversion efficiency (PCE)을 확보함으로써 플렉시블 유기태양전지 제작을 위한 ITO/PET 투명전극 성막 공법으로써 Roll to Roll sputter system의 적용가능성을 확인할 수 있었다.