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Optical and Electrical Properties of ITO/Ni/ITO Thin Films  

Kim So-Ra (Korea University of Technology and Education, Advanced Materials Engineering)
Seo Jung-Eun (Korea University of Technology and Education, Advanced Materials Engineering)
Kim Sang-Ho (Korea University of Technology and Education, Advanced Materials Engineering)
Lee In-Seon (Korea University of Technology and Education, Advanced Materials Engineering)
Kim Dong-Won (Kyonggi University)
Publication Information
Journal of the Korean institute of surface engineering / v.38, no.2, 2005 , pp. 55-59 More about this Journal
Abstract
ITO/Ni/ITO thin films were deposited on the PET by RF magnetron sputtering. Dependance of the process parameters such as deposition pressure, positions of Ni layer, on the transmittance, reflectance and sheet resistance of ITO/Ni/ITO film were investigated. When the Ni layer is placed at the center of ITO and deposition pressure is low, ITO/Ni/ITO films showed better optical and electrical properties. At these conditions, the transmittance, reflectance and sheet resistance of the ITO film were $90\%,\;0.38\%$ and $185\Omega/\Box$ respectively.
Keywords
indium Tin Oxide[ITO]; RF Sputtering; Ni; Transmittance; Sheet resistance;
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