• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.491-494
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• 2010

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.1-4
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• 2009

Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using $Cl_2/HBr$ inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temperature was kept nearly constant in spite of the change of the HBr mixing ratio, the positive ion density decreases rapidly with increasing the mixing ratio. On the other hand, a quadrupole mass spectrometer showed that the neutral HBr and Br species increased. The etching mechanism in the $HBr/Cl_2$ plasma was analyzed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• 마이크로전자및패키징학회지
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• 제12권3호
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• pp.213-217
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• 2005

ITO(indium tin oxide)/Glass 기판위에 정공 수송층으로 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]과 발광층으로 MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)]의 고분자를 사용하여 ITO/PEDOT:PSS/MEH-PPV/Al 구조를 갖는 고분자 유기 발광다이오드 (polymer light emitting diode: PLED)를 제작하였다. 고분자 유기 발광다이오드 제작시 MEH-PPV의 농도$(0.1\;wt\%\~0.9\;wt\%)$가 발광층 표면 거칠기와 박막층판의 마찰계수(friction coefficient)에 미치는 영향을 조사하였다. MEH-PPV의 농도를 $0.1\;wt\%$에서 $0.9\;wt\%$로 증가함에 따라 발광층의 RMS 값은 1.72 nm 에서 1.00 nm로 감소하여 거칠기가 개선되는 경향을 보여 주었다. 또한 발광층 박막의 마찰계수는 0.048에서 0.035로 감소하여 박막의 접합상태가 나빠지는 현상을 나타내었다. $0.5\;wt\%$의 농도를 갖는 PLED 다이오드에서 최대 휘도인 $409\;cd/m^2$ 값을 얻었다.

• 대한화학회지
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• 제43권3호
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• pp.315-320
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• 1999

고성능 전계발광(electroluminescent, EL) 소자에 사용되는 발광물질의 개발을 위하여 설계된 발광기능기의 분자구조는 비스스틸렌구조의 발광기능기에 전자주입과 수송을 위한 시안기와 정공주입과 수송을 위한 페닐아민기를 가진 구조이다. 위의 발광기능기로 구성 된 고분자물질, PU-BCN과 저분자물질, D-BCN을 합성하였다. PU-BCN과 D-BCN을 발광층으로 사용하여 만들어진 단층형 소자(SL)의 구조는 Indium-tin oxide(ITO)/발광층/MgAg이고, 적층형소자의 구조는 ITO/발광층/oxadiazole dehvative/MgAg, (DL-E)와 ITO/tri-phenylamine derivative/발광층/MgAg,(DL-H)의 두 종류이다. 동일한 발광기능기를 가진 고분자 발광물질, PU-BCN과 저분자발광물질, D-BCN은 전하주입과 수송성이 띄어난 물질로 평가되었으며, 두 발광물질들은 높은 전류밀도하에서 거의 동일한 발광특성을 보였다. 발광물질들의 최대 발광 피이크는 약 640 nm의 적색 발광영역에서 측정되었다.

• 한국신뢰성학회지:신뢰성응용연구
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• 제17권1호
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• pp.72-77
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• 2017

Purpose: The electrochemical corrosion behavior of tin oxide film coated on PET substrates has been studied under varying concentrations of acrylic acid to investigate possible corrosion in contact with the acidic environment. Method: Potentiodynamic test was performed for a commercial ITO/PET film in 0.1, 0.3, and 0.5 M of acrylic acid. The surface morphology was analyzed by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS). Results: Potentiodynamic test results showed an increase in Icorr and decrease in Ecorr value with increasing concentration of acid. Microscopic evaluation suggested the presence of certain deep cracks on the surface of the film in addition with a severe acidic attack. Conclusion: Exposure of ITO to acrylic acid resulted in the stress corrosion cracking of ITO film due to the mechanical mismatch between brittle inorganic ITO fim and a compliant organic PET substrate leading to the subsequent failure of the film.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.85-89
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• 2018

In this study, functional transparent conducting layers were investigated for Si-based photoelectric applications. Double transparent conductive oxide (TCO) films were deposited on a Si substrate in the sequence of indium tin oxide (ITO) followed by aluminum-doped zinc oxide (AZO). First, we observed that the conductivity and transparency of AZO dominate the overall performance of the double TCO layers. Secondly, the double layered TCO film (consisting of AZO/ITO) deposited by sputtering was compared to a AZO-only film in terms of their optical and electrical properties. We prepared three different AZO films: ITO:3min/AZO:10min, ITO:5min/AZO:7min, and ITO:7min/AZO:4min. The results show that the optical properties (transmittance, absorbance, and reflection) can be controlled by the film composition. This may provide a significant pathway for the manipulation of the optical and electrical properties of photoelectric devices.

• 센서학회지
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• 제4권4호
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• pp.10-15
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• 1995

유기 박막 electoluminescent(EL) 소자를 제작하여 전극의 일함수에 따른 출력휘도의 의존성과 휘도-전압 특성을 측정하였다. 제작된 소자의 구조는 Indium-Tin-Oxide(ITO)/정공수송층/발광층(전자수송층)/금속전극이며, 정공수송층으로는 PMMA+TPD(0.5wt%)와 측쇄 액정 고분자 메트릭스인 MC homopolymer+TPD(0.005wt%)와 (MC/MMA)copolymer+TPD(0.005wt%)을 사용하였으며, 발광층은 $Alq_{3}$을, 금속전극으로는 Ca, Mg, Mg:Ag(10:1) 와 Al을 사용하였다. 출력특성이 전압에 따른 정류특성을 가짐을 보였으며, 소자의 문턱전압은 5볼트이고, 출력 휘도는 10 볼트에서 700 $Cd/m^{2}$이상의 휘도를 보였다.

• 한국응용과학기술학회지
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• 제26권4호
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• pp.400-406
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• 2009

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).