• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.407-408
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• 2013

Thin transparent conductive oxides (TCOs) having a thickness lower than 30 nm have been widely usedin touch screen panels. However the resistivity of the TCO films significantly increases as the thickness decreases, due to the poor crystallinity at very thin thickness of TCO films. In this study, we have investigated the effect of electron beam irradiation during the sputtering on the electrical properties and transmittance of 30 nm-thick ITO films, which have a different SnO2 atomic percent, prepared by magnetron sputtering at room temperature. Fig. 1 shows the variation of resistivity of ITO films with a different SnO2 atomic percent for both the normal ITO films and electron beam irradiated ITO films. As shows in Fig. 1, the electron beam irradiation to the ITO (SnO2 weight percent 10%) films during the sputtering resulted in a significantly decreased in resistivity from $7.4{\times}10^{-4}{\Omega}-cm$ to $1.5{\times}10^{-4}{\Omega}-cm$ and it also increased in transmittance from 84% to 88% at a wavelength of 550 nm. These results can be attributed to energy transfer from electron to ad-atoms of ITO films during the electron beam irradiated sputtering, which can enhance the crystallinity of 30 nm-thick ITO films. It is strongly indicate that electron beam irradiation can greatly improve the electrical properties and transmittance of very thin ITO films for touch screen panels, flexible displays and solar cells.

• Current Photovoltaic Research
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• v.8 no.3
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• pp.102-106
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• 2020

In this paper, the effect of MoSe₂ on the contact resistance (R_C) of the transparent conducting oxide (TCO) and Mo junction in the scribed P2 region of the Cu(In,Ga)Se₂ (CIGS) solar module was analyzed. The CIGS/Mo junction becomes ohmic-contact by MoSe₂, so the formation of the MoSe₂ layer is essential. However, the CIGS solar module has a TCO/MoSe₂/Mo junction in the P2 region due to structural differences from the cell. The contact resistance (R_C) of the P2 region was calculated using the transmission line method, and MoSe₂ was confirmed to increase R_C of the TCO/Mo junction. B doped ZnO (BZO) was used as TCO, and when BZO/MoSe₂ junction was formed, conduction band offset (CBO) of 0.6 eV was generated due to the difference in their electron affinities. It is expected that this CBO acts as a carrier transport barrier that disturbs the flow of current, resulting in increased R_C. In order to reduce the R_C caused by CBO, MoSe₂ must be made thin in a CIGS solar module.

• Korean Journal of Metals and Materials
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• v.50 no.2
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• pp.159-163
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• 2012

A TCO-less ruthenium (Ru) catalytic layer on glass substrate instead of conventional Ru/TCO/ glass substrate was assessed as counter electrode (CE) material in dye sensitized solar cells (DSSCs) by examining the effect of the Ru thickness on the DSSC performance. Ru films with different thicknesses (34, 46, 69, and 90 nm) were deposited by atomic layer deposition (ALD) on glass substrates to replace both existing catalyst and electrode layer. In order to make our comparison, we also prepared an Ru catalytic layer by a similar method on FTO/glass substrate. Finally, we prepared the $0.45cm^2$ DSSC device the properties of the DSSCs were examined by cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V) method. CV measurements revealed an increase in catalytic activity with increasing film thickness. The charge transfer resistance at the interface between the electrolyte and Rudecreased with increasing Ru thickness. I-V results showed that the energy conversion efficiency increased up to 1.96%. Our results imply that TCO-less Ru/glass might perform as both catalyst and electrode layer when it is used in counter electrodes in DSSCs.

• Environmental and Resource Economics Review
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• v.33 no.1
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• pp.33-57
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• 2024

This study analyzes the purchase subsidy for electric light-duty vehicles in terms of environmental benefits and total cost of ownership(TCO). For the environmental benefits, we considered the emissions from the power generation mix and reflected the change in efficiency of electric vehicles according to the temperature distribution. The environmental benefits of driving electric vehicles were estimated to be between KRW 2.2 million and KRW 5.3 million. Also, the TCO of electric vehicles compared to diesel vehicles under the current purchase subsidy was estimated to be about KRW 3.6 million lower for business use and about KRW 6.6 million lower for non-business use. These results imply that it is reasonable to lower the unit price of the purchase subsidy even within the same budget. Moreover, the remaining budget could be better spent on upgrading the charging infrastructure, which would reduce the inconvenience of charging for potential buyers.

• Proceedings of the Korean Society of Computer Information Conference
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• 2022.01a
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• pp.141-143
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• 2022

IT 자산관리(ITAM, IT Asset Management)는 조직이 소유한 IT 자산과 관련된 모든 이력 변경 정보, 비용, 계약 및 구매/리스 데이터를 관리하는 것이다. 자산 취득 및 처분에 관한 기술, 재무 및 계약 정보를 취득하고 통합한다. 그리고 유지하는 과정. 비즈니스의 효율성과 효율성을 높이기 위해 IT 인프라의 서비스 및 리소스에 대한 자산 관리의 4가지 요소(4C, 특성: 자산 수명 주기 정보, 구성: H/W와 S/W 정보, 계약: 서비스 및 보증, 종합관리: 보증 정보, 비용 및 재무 정보)는 회사 인프라 자원의 TCO 및 ROI를 개선하고 생산성의 범위를 확장하는 것을 목표로 한다. IT 자산 관리의 필요성은 사업에 필요한 IT 자산 정보 제공, 비용 관리, 구매 결정에 필요한 정보 제공, 소프트웨어 라이선스 및 하드웨어 자원의 재활용 촉진, 장치 노후화로 인한 추가 비용 방지를 위한 것이다. 비용 예측 및 관리, 내부 통제 및 외부 감사 대응, 사업부별 IT 비용 및 활용도 분석을 유지 및 지원한다. 사업부의 IT 자원 사용으로 인한 문제는 업무 효율성을 저하시키고 IT 부서의 업무를 증가시키며 결과적으로 기업의 비용을 증가시키며 이것이, IT 자산 관리의 현실이다. 본 논문에서는 적용 사례를 통해 더 나은 관리 방안을 마련하기 위한 방법을 제안한다.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.28-32
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• 2017

In this paper, (Ga,Al):ZnO layers were deposited by sputtering to evaluate the device performance according to the thickness of the layer. As the thickness increased, low transmittance was observed, but the electrical resistance was improved. On the other hand, the highest efficiency was recorded at 400 nm device than a 500 nm of it. Therefore, since the critical thickness exists, it is necessary to set an adequate TCO layer thickness in consideration of the characteristics of the underlying film and the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• KIEAE Journal
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• v.10 no.4
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• pp.101-109
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• 2010

As global warming progresses, nations around the world are trying to reduce emission of $CO_2$ that accounts for the greatest portion of greenhouse gases. To reduce $CO_2$ emission, it is first necessary to estimate $CO_2$ emission of each industry. Government authorities estimate basic unit of $CO_2$ emission from re-bar that is one of the key materials of construction industry with LCA technique (Life Cycle Assessment). However, basic unit of $CO_2$ emission varies from organization to organization. The Ministry of Land, Transport and Maritime Affairs (2004) publishes it 3.48($TCO_2/ton$) and 0.30($TCO_2/ton$) with input-output analysis while the Korea Environmental Industry & Technology Institute (2008) defines it as 0.34($TCO_2/ton$) with process analysis, which indicates ambiguity in application of basic unit of $CO_2$emission. Based on the analysis of conventional methods used for estimating the $CO_2$ emission, therefore, this research suggests existing problems on the methods and focuses on proposing an strategy to effectively estimate the basic unit of $CO_2$ emission according to the energy consumption limited to the re-bar production in steel mill in order to overcome the problems. The result of this research is expected to be helpful in calculating and reducing $CO_2$ emission.

• Journal of Information Technology Services
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• v.12 no.3
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• pp.345-377
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• 2013

Government agencies have many difficulties for the information system development and operation. One of the difficulties is a budget estimation. Each government agency suggests individually different estimation for the personnel expenses and IT infrastructure adoption costs in the same field of informatization promotions. The other one is the operation costs are increased exponentially in every year[42, 51]. Those difficulties make government agencies can not help adopting SaaS. In fact, most of IT consulting company and government agencies already recognized a variety of SaaS advantages. The most typical SaaS's advantages are cost reduction, Software rapid development and deployment. However, once government agencies decide to adopt SaaS, they can not avoid many problems and difficulties. There is no information in a detailed item in a budget. In those kinds of situation, there is no choice whether government agencies accept SaaS provider's suggesting adoption costs or not. Thus, we provide a sheet of SaaS adoption cost estimation to government agencies. To know the cost factors, this study uses TCO(Total Cost of Ownership)'s criteria. To give a management point, this study uses Gartner's Application development Life Cycle. In this study, the integration check framework which is SaaS adoption cost estimation makes government agencies possible to establish a adequate budget.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.