• Current Optics and Photonics
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• v.3 no.6
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• pp.516-521
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• 2019

The electrical leakage levels of GaN-based light-emitting diodes (LEDs) containing leakage paths are estimated using photoluminescence (PL) and photovoltaic properties under photoexcitation conditions. The PL intensity and open-circuit voltage (V_OC) decrease because of carrier leakages depending on photoexcitation conditions when compared with reference values for typical LED chips without leakage paths. Changes of photovoltage-photocurrent characteristics and PL intensity due to carrier leakage are employed to assess the leakage current levels of LEDs with leakage paths. The current corresponding to the reduced V_OC of an LED with leakage from the photovoltaic curve of a reference LED without leakage is matched with the leakage current calculated using the PL intensity reduction ratio and short-circuit current of the LED with leakage. The current needed to increase the voltage for an LED with a leakage under photoexcitation from V_OC of the LED up to V_OC of a reference LED without a leakage is identical to the additional current needed for optical turn-on of the LED with a leakage. The leakage current level estimated using the PL and photovoltaic properties under photoexcitation is consistent with the leakage level measured from the voltage-current characteristic obtained under current injection conditions.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.222-227
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• 2003

Recent advances in room-temperature, visible and near-IR diode laser sources for telecommunication, optical data storage applications are enabling combustion diagnostics system based on diode laser absorption spectroscopy. In contrast to some traditional sampling-based gas-sensing instruments, tunable diode laser absorption spectroscopy system is advantageous because of their non-invasive nature, high sensitivity, fast response time and real-time measurement capability. So, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor system arc now appearing for a variety of applications. The objective of this research is to take advantage of distributed feed-back diode laser and measure the $CO_{2}$ concentration (by using direct absorption and wavelength modulation spectroscopy methods). In addition to survey spectra of $CO_{2}$ bands and spectroscopic parameters between 1565 and 1579 run were computed at temperatures between 296 and 1200 K (by using HITRAN 2000 database). It experimentally found out that the features of direct absorption and wavelength modulation spectroscopy methods.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.135-141
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• 2007

This paper describes the design technology for a third generation thermal imaging system, which is more compact than before, using a $320\times240$ mid-IR focal plane detector. The third generation non-scanning thermal imaging system was constructed as a compact thermal imaging module as a reconnaissance, surveillance and navigation sensor for helicopter and infantry vehicles in the $1980's\sim1990's$ and now, we designed a new compact infrared camera and studied a new type of non-uniformity correction lens fer this camera.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.91-91
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• 2012

We present high-resolution near-infrared host galaxy spectra of low-z quasars, PG0844+349 (z=0.064), PG1226+023 (z=0.158), and PG1426+015 (z=0.086). The observation was done by using the near-IR high resolution echelle spectrometer, IRCS, at the SUBARU 8.2 m telescope. The full width at half maximum of the point spread function was about 0.3 arcsec by using an Adaptive Optics system, which can effectively resolve the quasar spectra from the host galaxy spectra. The signal-to-noise ratios are increased by the total exposure time up to several hours per targets and the development of data reduction method. We compare our results to the stellar spectra library and sample spectra from Dasyra et al. (2007) and Watson et al. (2008). The identified spectral lines will be used to study the physical mechanism of quasars, and the velocity dispersions of the stars in the bulge of the host galaxy.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.13-18
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• 2000

The SiOxNy thin films were prepared on Si(lOO) by reactive RF sputtering method. The reactive gas ratio and the power were used as parameters for depositing SiOxNy thin fims. The properties of ${SiO_x}{N_y}$ thin tilms were investigated by XRD, XPS, refractive index and extinction coefficient analyzer (n'||'&'||'k analyzer), and FfIR. It was found by the results of the x-ray diffraction measurement that SiOxNy thin films were grown to an amorphous structure. From the results of the XPS, and the n'||'&'||'k analyzer, it was found that refractive index was intended to increase with the increasement of the relative nitrogen contents of the ${SiO_x}{N_y}$ thin films.

• Elastomers and Composites
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• v.30 no.1
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• pp.20-31
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• 1995

The purpose of this study is to investigate the reinforcement of inorganic filler silica, treated by MDI about SBR vulcanizate. The characteristics of vulcanization, physical properties, surface properties and dynamic properties were investigated after mixing those silica with SBR and unmodified silica with SBR. In this experiment only the quantity of silica was variable. In the vulcanization characteristics tested by rheometer, S-series showed the fastest scorch $time(t_{10})$ and optimum cure $time(t_{90})$. And in test or tensile characteristics hardness, tensile strength, 100%, 300% modulus and elongation were all appeared in the order of M>S-series. The characteristic bonding of urea between unmodified silica and MDI could be confirmed in IR spectrum. The shapes of silicas treated chemically were observed by SEM. And the dispersion of the filler in the SBR composite was uniform. In the dynamic characteristics by the RDS, the order of elastic modulus G' values was as follows : M>S-series, and also the order of damping values was as follows : M>S-series.

• Journal of the Korean Society of Combustion
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• v.9 no.3
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• pp.27-35
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• 2004

Diode laser absorption sensors are advantageous because they may provide fast, sensitive, absolute, and selective measurements of species concentration. These systems are very attractive for practical applications owing to its compactness, resonable cost, robustness, and ease of use. In addition, diode lasers are fiber-optic compatible and thus enable simultaneous measurements of multiple species along a line-of-sight. Recent advances of room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications make it possible to be applied for combustion diagnostics based on diode laser absorption spectroscopy. Therefore, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor systems are now appearing for variety of applications. The objectives of this research are to develope a new gas sensing system and to verify feasibility of this system. Wavelength and power characteristics as a function of injection current and temperature are experimentally found out. Direct absorption spectroscopy has been demonstrated in these experiments and has a bright prospect to this diode laser system.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.109-116
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• 2018

$Eu_2(SO_4)_3$ was synthesized by chemical precipitation method and the crystal structure was determined by Rietveld analysis. The compound crystallizes in monoclinic space group C2/c. In the air environment, $Eu_2(SO_4)_3$ is stable up to $670^{\circ}C$. The sample of $Eu_2(SO_4)_3$ was examined by Raman, Fourier-transform infrared absorption and luminescence spectroscopy methods. The low site symmetry of $SO_4$ tetrahedra results in the appearance of the IR inactive ${\nu}_1$ mode around $1000cm^{-1}$ and ${\nu}_2$ modes below $500cm^{-1}$. The band intensities redistribution in the luminescent spectra of $Eu^{3+}$ ions is analyzed in terms of the peculiarities of its local environment.

• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Current Optics and Photonics
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• v.3 no.3
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• pp.248-255
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• 2019

Spherical $CeO_2:Ho^{3+}/Yb^{3+}$ particles were synthesized using spray pyrolysis, and the upconversion (UC) properties were investigated with changing the preparation conditions and the infrared pumping power. The resulting particles had a size of about $1{\mu}m$ and hollow structure. The prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles exhibited intense green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$ and showed weak red or near-IR peaks. In terms of achieving the highest UC emission, the optimal concentrations of $Ho^{3+}$ and $Yb^{3+}$ were 0.3% and 2.0%, respectively. The UC emission intensity of prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles had a linear relationship with crystallite size and concentration quenching was caused by dipole-dipole interaction between the same ions. Based on the dependency of UC emission on the pumping power, the observed green upconversion was achieved through a typical two-photon process and concluded that the main energy transfer from $Yb^{3+}$ to $Ho^{3+}$ was involved in the ground-state adsorption (GSA) process.