• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.545-553
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• 2012

A Gimbal structure system in observation reconnaissance aircraft is made up of camera module and stabilization drive device supporting camera module. During flight for image recording, the aircraft undergoes serious accelerations with wide frequencies due to several factors. Though base excitation of stabilization drive device induces vibration of camera module, it must get the stable and clean images. To achieve this aim, acceleration of camera module must be reduced. Hence, vibration isolators were installed to stabilization drive device. Considering isolators and bearings in the stabilization drive device, vibration characteristics of gimbal structure system were analyzed by finite element method. For three translational direction, acceleration transmissibility of camera module was calculated by harmonic responses analysis in the frequency range of 5 ~ 500 Hz. In addition to, sine-sweep experiment were performed to prove correctness of present analysis.

• Journal of Adhesion and Interface
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• v.10 no.1
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• pp.17-22
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• 2009

Polymer thin films were prepared by radio frequency (RF) plasma polymerization of phthalic anhydride (PA). First, monomer vaporization temperature ($100{\sim}160^{\circ}C$) was optimized by evaluating the thermal properties of thin films using differential scanning calorimeter (DSC) and measuring the root-mean-square (RMS) roughness with atomic force microscope (AFM) at the fixed plasma power of 10 W and time of 5 min in a continuous-wave (CW) mode. Plasma power (5~20 W) was then optimized by measuring the film solubility in solvents such as toluene, acetone, dimethylsulfoxide (DMSO) and 1 methylpyrrolidine (NMP). Next, pulsed mode plasma polymerization was also studied by varying the duty cycle of on-time (5, 20%) under optimized conditions of continuous-wave (CW) mode ($120^{\circ}C$, 10 W) in order to increase the anhydride functional groups. Finally, polymer thin films were characterized by Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analyzer (TGA) and ${\alpha}$-step.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.1-9
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• 2012

A 10-b 500 MS/s A/D converter (ADC) with a hybrid calibration and error correction logic is described. The ADC employs a single-channel cascaded folding-interpolating architecture whose folding rate (FR) is 25 and interpolation rate (IR) is 8. To overcome the disadvantage of an offset error, we propose a hybrid self-calibration circuit at the open-loop amplifier. Further, a novel prevision digital error correction logic (DCL) for the folding ADC is also proposed. The ADC prototype using a 130 nm 1P6M CMOS has a DNL of ${\pm}0.8$ LSB and an INL of ${\pm}1.0$ LSB. The measured SNDR is 52.34-dB and SFDR is 62.04-dBc when the input frequency is 78.15 MHz at 500 MS/s conversion rate. The SNDR of the ADC is 7-dB higher than the same circuit without the proposed calibration. The effective chip area is $1.55mm^2$, and the power dissipates 300 mW including peripheral circuits, at a 1.2/1.5 V power supply.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.97-102
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• 2018

In this paper, W-band Waveform Generator for compact radar has been designed and fabricated. DDS (Direct Digital Synthesizer) is applied to generate CW (Continuous Wave) and FMCW (Frequency Modulation Continuous Wave) waveform at high speed. We designed two LO (Local Oscillator) paths for functions of distance delay and distance tracking tests at the prpposed system without extra test equipment. Two mode selections are provided by switch. It is observed that fabricated waveform generator performs -91 dBc/Hz phase noise at offset 1 kHz and -63.2 dBc spurious. Proposed W-band Waveform Generator is expected to apply for W-band compact radar transceiver module.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.883-890
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• 1990

Although various theories have been presented on the mechanism of setting retardation of 3CaO·Al2O3, this phenomenon has not yet been defined. The present investigation was initiated in order to solve the mechanism from the view point of coordination chemistry. The solubility of Ca(OH)2 in aquous solution of soldium gluconate was abnormally high, and was proportional to the concentration of sodium gluconate. These phenomena were attributed to the soluble complex formation, that is, (1 : 1)Ca complex formation between calcium ion and gluconate ion. The author's proposal was further confirmed by the results of electrical conductivity measurement. The formation of calcium complex was also supported by IR spectra and DTA. When sodium gluconate was dissolved in 3CaO·Al2O3 suspension, calcium complex and aluminum complex were formed. As an experimental evidence, the asymmetric stretching vibration of carboxyl group in sodium gluconate was observed to be shifted to lower frequency from 1625cm-1 to 1585cm-1 characteristically. The characteristic exothermic peaks of the complexs at 430℃ and 700℃ observed in DTA curve also suggest the formation of the complexs between sodium gluconate and 3CaO·Al2O3.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.130-135
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• 1995

GaAs power MESFET's with 0.5 .mu.m gate length using a conventional UV lithography and angle evaporations are fabricated and then DC and RF characteristics are measured and carefully analyzed. The 0.5$\mu$m GaAs power MESFET's are fabricated on epi-wafers which have an undoped GaAs layer inbetween n+ and n GaAs layers grown by MBE, and by the processes such as an image reversal(IR), air-bridge, and our developed 0.5 .mu.m gate fabrication techniques. The total gate widths of the fabricated 0.5$\mu$m GaAs power MESFETs are 0.6-3.0 mm, the current saturation of them 80-400 mA, the maximum linear and RF output power of them 60-265 mW. The current gain cut-off frequencies for the 0.5$\mu$m GaAs power MESFETs varies 13-16 GHz. For the test frequency of 10 GHz the maximum unilateral transducer power gains and the power added efficiencies of the GaAs power devices are 7.0-2.5 dB and 35.68-30.76 %, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• Textile Coloration and Finishing
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• v.8 no.1
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• pp.56-63
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• 1996

A number of thermotropic liquid crystalline polyurethanes with mesogenic unit were synthesized by polyaddition of a para-type diisocyanate such as 1, 4-phenylene diisocyanate(1,4-PDI) with 4, 4'-bis($\omega$-hydorxyalkoxy) biphenyls($BP{m}$) in DMF. The thermal and liquid crystab line properties were examined by differential scanning calorimetry(DSC), polarized optical microscopy, and wide-angle X-ray scattering(WAXS). Intrinsic viscosities of the polymers exbibited two endothermic peaks correspondinding to phase transitions of melting and isotropization. For example, polyurethane(1,4-PDI/($BP{11}$) ) was found to display a liquid crystalline phase between 177 to 205$^{\circ}C$. In order to know how the hydrogen bonding interaction affects the formation of mesophases in polyurethane 1, 4-PDI/($BP{8}$) / thermal processing FT-IR measurements were carried out. It was found that the stretches regarded as shift to higher frequency region with increasing temperature which showed grdually their liquid crystalline phase

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.228-231
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• 2002

In this paper, we estimated the insulation properties of cross-linked polyethylene (XLPE) for ultra-high voltage cable. we have studied the dielectric characteristics of XLPE due to frequency and temperature variation. The dielectric characteristics were measured in the temperature range from $25[^{\circ}C]$ to $120[{^{\circ}C]}$. Also we measured in the voltage range of 1[V] to 20[V] according to the step voltage application method. From FT-IR spectrum as an analysis of physical properties, a strong absorption in wavenumbers 700 to $730[cm^{-1}]$, $1456[cm^{-1}]$ and 2700 to $3000[cm^{-1}]$ observed by the methyl groups$(CH_{2})$. From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature $60[^{\circ}C]$ and $106.58[^{\circ}C]$.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1540-1542
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• 1997

Plasma polymerized thin films were fabricated by interelectrode capacitively coupled type apparatus. FT-IR analyses indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Relative dielectric constant and dielectric loss tangent of thin films fabricated in the discharge power of 90[W] showed $3.212{\sim}3.805$ and $0.0026{\sim}0.0451$ in alternating frequency of $10^3{\sim}10^6$[Hz]. Contact angle measurement indicated that cross-link of the films is increased with the discharge power.