• 대한금속재료학회지
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• 제46권11호
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• 센서학회지
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• 제30권1호
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• pp.36-41
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• 2021

The motivation of this paper is to easily analyze the properties of nondispersive infrared gas sensor that has more than two different optical path length and to suggest the criterion and definition of infrared light absorbance in order to minimize the measurement errors. With the output voltage ratios and the normalized derivatives of infrared ray (IR) absorbance, when the normalized derivatives of IR absorbance decreases from 0.28 to 0.10, the lower and higher limits of errors were decreased from -5.62% and 2.39% to -4.27% and 2.78%. When the normalized derivatives of IR absorbance were 0.10, the output voltage could be partitioned into two regions with one exponential equation and the temperature compensation error was less than 5%.

• 한국재료학회지
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• 제17권6호
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• pp.323-330
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• 2007

We fabricated thermaly evaporated 10 nmNi/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated $10{\sim}50$ nm-thick ITO/Si films with a rf-sputter as reference films. A four-point tester was used to investigate the sheet resistance. A transmission electron microscope (TEM) and an X-ray diffractometer were used for the determination of cross sectional microstructure and phase changes. A UV-VISNIR and FT-IR (Fourier transform infrared rays spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed $20{\sim}70nm-thick$ silicide layers formed on the single and polycrystalline silicon substrates. Nickel silicides and ITO films on the single silicon substrates showed almost similar absorbance in near-IR region, while nickel silicides on polycrystalline silicon substrate showed superior absorbance above 850 nm near-IR region to ITO films. Nickel silicide on polycrystalline substrate also showed better absorbance in middle IR region than ITO. Our result implies that nano-thick nickel silicides may have exellent absorbing capacity in near-IR and middle-IR region.

• 센서학회지
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• 제29권5호
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• pp.303-311
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• 2020

Nondispersive infrared CO₂ gas sensor was developed after the simulation of optical cavity structure and assembling the optical components: IR source, concave reflectors, Fresnel lens, a hollow disk, and IR detectors. By placing a hollow disk in front of reference IR detector, the output voltages are almost constant value, near to 70.2 mV. The absorbance of IR light, F_a, shows the second order of polynomial according to ambient temperatures at 1,500 ppm. The differential output voltages and the absorbance of IR light give a higher accuracy in estimations of CO₂ concentrations with less than ± 1.5 % errors. After implementing the parameters that are dependent upon the ambient temperatures in microcontroller unit (MCU), the measured CO₂ concentrations show high accuracies (less than ± 1.0 %) from 281 K to 308 K and the time constant of developed sensor is about 58 sec at 301 K. Even though the estimation errors are relatively high at low concentration, the developed sensor is competitive to the commercial product with a high accuracy and the stability.

• 대한금속재료학회지
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• 제46권2호
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• 한국재료학회지
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• 제19권4호
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• pp.179-185
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• 2009

We fabricated thermally evaporated 30 nm-Ni/(20 nm or 60 nm)a-Si:H/Si films to investigate the energy-saving property of silicides formed by rapid thermal annealing (RTA) at temperatures of $350^{\circ}C$, $450^{\circ}C$, $550^{\circ}C$, and $600^{\circ}C$ for 40 seconds. A transmission electron microscope (TEM) and a high resolution X-ray diffractometer (HRXRD) were used to determine the cross-sectional microstructure and phase changes. A UVVIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM and HRXRD analysis, for the nickel silicide formed at low temperatures below $450^{\circ}C$, we confirmed columnar-shaped structures with thicknesses of $20{\sim}30\;nm$ that had ${\delta}-Ni^2Si$ phases. Regarding the nickel silicide formed at high temperatures above $550^{\circ}C$, we confirmed that the nickel silicide had more than 50 nm-thick columnar-shaped structures with a $Ni_{31}Si_{12}$ phase. Through UV-VIS-NIR analysis, nickel silicide showed almost the same absorbance in the near IR region as well as ITO. However, in the middle IR region, the nickel silicides with low temperature showed similar absorbance to those from high temperature silicidation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.45-51
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• 2005

We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.

• 보존과학회지
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• 제37권6호
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• pp.648-658
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• 2021

본 연구에서는 증해제 종류(천연 잿물, Na₂CO₃)와 초지 시기(겨울, 여름)가 다른 한지를 선정하여 105℃의 가속열화 환경에서 나타나는 한지의 화학적 변화를 분석하고자 하였다. 백색도(brightness) 및 황색도(yellowness), pH를 측정하여 한지의 열화 정도를 확인하였으며, 적외선 분광분석(FT-IR)을 통해 열화가 진행됨에 따른 셀룰로오스 내 작용기의 변화 정도를 나타내었다. 이를 바탕으로 X선 회절분석(XRD)과 라만 분광분석을 실시하여 FT-IR에서 나타난 셀룰로오스 내 결정 및 비결정영역의 변화를 검증하였다. FT-IR 분석결과, 열화가 진행됨에 따라 셀룰로오스 내 비결정영역의 흡광도는 감소하는 반면 결정영역의 흡광도는 미미하게 증가하는 양상을 보였다. 결정영역의 증가는 XRD 분석 후 결정화도(Crystallinity Index, CI) 산출을 통해 열화 후 다소 증가함을 보여 같은 경향을 띠는 것을 확인할 수 있었다. 또한 라만 분광분석 결과, 열화 후 측정된 형광을 통해 초지 조건에 따른 셀룰로오스 내 비결정영역의 분해 정도를 확인하였다.

• 공업화학
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• 제9권2호
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• pp.249-254
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• 1998

본 연구에서는 열안정성 양이온 교환수지로 sulfonated poly(ether ether sulfone) (SPEES)을 합성하였고, SPEES는 hydroquinone과 dichlorophenyl sulfone으로 poly(ether ether sulfone) (PEES)을 합성한 후 술폰화 되었다. FT-IR 스펙트럼 분석으로부터 $1140cm^{-1}$에서 $SO_2$의 비대칭 신축진동에 의한 흡수피크가 나타나고, $621cm^{-1}$에서 S-C 진동에 의한 흡수피크가 나타나는 것으로 보아 술폰화가 되었음을 알 수 있다. IR 흡광도에 의해 얻어진 술폰화의 최적조건은 반응시간 3시간, 반응온도 $30^{\circ}C$, chlorosulfonic acid의 농도가 150 mol%이었다. 최적조건으로 술폰화된 PEES의 IR 흡광도에 의해 계산된 이온교환용량은 6.2 meq/g이었고, 적정에 의해 얻어진 이온교환용량값과 유사하였다. 또한 금속이온이 흡착되었을 때 SPEES의 morphology는 작은 뇌, 혹, 좁쌀같은 형태가 나타나며, 표면의 조직은 더욱 조밀해진다.

• 한국식품영양과학회지
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• 제23권4호
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• pp.604-613
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• 1994

Hydrophilic brown pigments(HBPs) produced during fermentation and aging the domestic Meju and Doenjang were separated by dialysis and chromatography , and their antioxidant activity were measured . The chemical properties of HBP were determined by UV and IR spectrophotometry. HBPs contents were found to be 93.1 mg/g and 183.2mg/g in Meju fermentated for 30 days and 80 days , respectively. The ratio of dialysate to diffusate of the HBPs were appeared to be 70 : 30 and 87 :13 in the Meju fermented for 30 days and 80 days, respectively. and the rtio in the Doenjang aged for 60 days was 91 :9 , indicating that dialysate slowly days, respectively, and the ratio in the Doenjang aged for 60 days was 91 : 9, incidatin that dialysate slowly increased by the fermentation . Both portion exhibited strong antioxidant activity, but more stronger antioxidant activity was found in the dialysate. DEAE-celluose column chromatography showed that dialysate contained more materials eluted by 0.01-0.03M HCI solution than 0.01M acetate buffer, but diffusate showed opposite results. The degree of browning reaction and antioxdiant activity found in the fraction eluted by HCI solution was stronger than that of the fraction eluted by acetate buffer. The fraction eluted from DEAE-cellulose column chormatogrphy was further fractionaged by TLC and found that strong antioxidant activity was present in the fractions which did not possess fluorescenece and showed a negative ninhydrin reaction. TLC fractions of HCI eluant in Meju exhibited a strong absorbance at 260-280nm, but most of other fractions did not show any absorbance at UV region. TLC fractions from dialysate and diffusate showed fairly identical IR spectrum with absorbance at 3400cm-1, 2800cm-3000cm -1, 1600cm, -1 1400cm-1 and 1100 cm-1 , however, in addition to these absorbances, the spectrum from HCI eluant of Meju exhibited a strong absorbance at 1750cm , indicating the carbonic acid or carbonate ester.