• Journal of Welding and Joining
• /
• v.26 no.3
• /
• pp.30-36
• /
• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of the Korean Society for Precision Engineering
• /
• v.15 no.1
• /
• pp.51-59
• /
• 1998

The purposes of the paper are to consider the failure phenomenon based on delamination and crack when the encapsulant of plastic IC package under hygrothermal loading in the IR soldering process is on elastic and viscoelastic behavior due to the temperature and to show the optimum design using fracture mechanics. The model for analysis is the plastic SOJ package with a dimpled diepad. The package model with the perfect delamination between chip and diepad is chosen to estimate the resistance to fracture by calculating J-integrals in low temperature and C(t)-integrals in high temperature with the change of the design under hygrothermal loading. The optimum design to depress the delamination and crack in the plastic IC package is presented.

• Journal of the Korean Society for Precision Engineering
• /
• v.15 no.1
• /
• pp.43-50
• /
• 1998

The purpose of the paper is to protect the damage of plastic IC package with searching the cause of the fracture due to the delamination and crack when the encapsulant of plastic IC package is on viscoelastic behavior with the effect of creep on high temperature, The model for analysis is the plastic SOJ package with dimpled diepad in the IR soldering process of surface mounting technology. The risk of delamination with calculating the distribution of viscoelastic thermal stress in the package without the crack in the surface mounting process is checked. The package model with the perfect delamination between chip and diepad is chosen to estimate the resistance against fracture in thermal loading with calculating C (t)-integrals according to the change of the design. The optimum design to depress the delamination and crack is presented.

• Current Photovoltaic Research
• /
• v.11 no.2
• /
• pp.44-48
• /
• 2023

In heterojunction technology (HJT) solar cells, low-temperature curing paste is used because the passivation layer deteriorates at high temperatures of 200℃ or higher. However, manufacturing HJT photovoltaic (PV) modules is challenging due to the weak peel strength between busbar electrodes and cells after soldering process. For this issue, the electrode thicknesses of the busbars of the HJT solar cell were analyzed, and the peel strengths between electrodes and wires were measured after soldering using an infrared (IR) lamp. As a result, the electrodes printed by the screen printing method had a difference in thickness due to screen mask. Also, as the thickness of the electrode increased, the peel strength of the wire increased.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.11a
• /
• pp.67-73
• /
• 2001

To investigate the relationships of solder joint characteristics with solder composition and A:V ratio (solder volume per pad area), Sn-37Pb and Sn-4.0Ag-0.5Cu solder balls with 330, 400, 450 and $457{\mu}{\textrm}{m}$ size were reflowed on same substrate. Sn-37Pb and Sn-4.0Ag-0.5Cu was reflowed at $220^{\circ}C$ and $240^{\circ}C$ respectively by IR-type soldering machine. As a result of reflowed solder- ball diameter(D) and height(H) measurement, D/H was decreased with solder ball size increment in range of 330~450 ${\mu}{\textrm}{m}$. But, D/H was increased in the solder joint for 457 ${\mu}{\textrm}{m}$ size, it was caused possibly by decrement of solder ball height increment compared with solder volume increment. As a result of shear and pull test, joint strength with A:V ratio was high. Joint strength of Sn-4.0Ag-0.5Cu was higher than Sn-37Pb. However, Sn-37Pb had more stable solder joint of small standard deviation. A thick and clean scallop type Ni-Cu-Sn intermetallic compound layer was formed in high A:V ratio and Sn-4.0Ag-0.5Cu solder joint interface.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.20 no.4
• /
• pp.1347-1355
• /
• 1996

The purpose of this paper is to evaluate the delamination and fracture integrity of the IC plastic package under hygrothermal loading by stress analysis and fracture mechanics approaches. The plastic SOJ package with a dimpled diepad under the reflow slodering process of IR heating type is considered. On the package without a crack, the stress variation according to the change of the design variables such as the material and shape of the package is calculated and the possibility of delamination is considered. For the model fully delaminated between the chip and diepad, J-integrals are calculated for the various design variables and the fracture integrity is discussed. From the results, optimal design values of variables to prevent the delamination and fracture of IC package are obtained. In this study, FDM program to obtain the vapor pressure from the content of moisture absorbed into the package is developed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.10a
• /
• pp.1033-1036
• /
• 2002

Wafer bonding methods such as fusion and anodic bonding suffer from high temperature treatment, long processing time, and possible damage to the micro-scale sensor or actuators. In the localized bonding process, beating was conducted locally while the whole wafer is maintained at a relatively low temperature. But previous research of localized heating has some problems, such as non-uniform soldering due to non-uniform heating and micro crack formation on the glass capsule by thermal stress effect. To address this non-uniformity problem, a new heater configuration is being proposed. By keeping several points on the heater strip at calculated and constant potential, more uniform heating, hence more reliable wafer bonding could be achieved. The proposed scheme has been successfully demonstrated, and the result shows that it will be very useful in hermetic packaging. Less than 0.2 ㎫ contact Pressure were used for bonding with 150 ㎃ current input for 50${\mu}{\textrm}{m}$ width, 2${\mu}{\textrm}{m}$ height and 8mm $\times$ 8mm, 5mm$\times$5mm, 3mm $\times$ 3mm sized phosphorus-doped poly-silicon micro heater. The temperature can be raised at the bonding region to 80$0^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional micro heaters. For gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for gross leak check. The pass ratio of bonded dies was 70%, for conventional localized heating, and 85% for newly developed FP scheme. The bonding strength was more than 30㎫ for FP scheme packaging, which shows that FP scheme can be a good candidate for micro scale hermetic packaging.