• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.81-89
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• 2022

비전도성 필름(non-conductive film, NCF)의 적용이 Cu/Ni/Sn-2.5Ag 미세범프의 금속간화합물(intermetallic compound, IMC) 성장 거동에 미치는 영향을 분석하기 위해 110, 130, 150℃의 온도 조건과 1.3×10⁵ A/cm²의 전류밀도 조건에서 실시간 열처리 및 electromigration(EM) 실험을 진행하였다. 그 결과, NCF 적용 유무와 열처리 및 EM 실험과 관계없이 Ni₃Sn₄ IMC 성장에 필요한 활성화에너지는 약 0.52 eV로 큰 차이는 보이지 않았다. 이는 Ni-Sn IMC의 성장속도가 Cu-Sn IMC 성장 속도보다 매우 느리며, 또한 Ni-Sn IMC의 성장 거동은 시간의 제곱근에 선형적으로 증가하므로 확산이 지배하는 동일한 반응기구를 가지며 NCF 적용에 따른 역응력(back stress)의 EM 억제 효과가 크지 않기 때문에 Ni₃Sn₄ IMC 성장에 필요한 활성화에너지는 차이가 나지 않는 것으로 판단된다.

• Current Photovoltaic Research
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• 제8권4호
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• pp.124-128
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• 2020

Output power of photovoltaic (PV) modules installed outdoors decreases every year due to environmental conditions such as temperature, humidity, and ultraviolet irradiations. In order to promote the installation of PV modules, the reliability must be guaranteed. One of the important factors affecting reliability is intermetallic compounds (IMC) layer formed in ribbon solder joint. For this reason, various studies on soldering properties between the ribbon and cell have been performed to solve the reliability deterioration caused by excessive growth of the IMC layer. However, the IMC layer of the PV module interconnected by multi-wires has been studied less than using the ribbon. It is necessary to study soldering characteristics of the multi-wire module for improvement of its reliability. In this study, we analyzed the growth of IMC layer of the PV module with multi-wire and the degradation of output power through damp-heat test. The fabricated modules were exposed to damp-heat conditions (85 ºC and 85 % relative humidity) for 1000 hours and the output powers of the modules before and after the damp-heat test were measured. Then, the process of dissolving ethylene vinyl acetate (EVA) as an encapsulant of the modules was performed to observe the IMC layer. The growth of IMC layer was evaluated using OM and FE-SEM for cross-sectional analysis and EDS for elemental mapping. Based on these results, we investigated the correlation between the IMC layer and output power of modules.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.73-79
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• 2022

본 연구에서는 최근 저온접합 소재로 각광받고 있는 Ga과 대표적인 전극 물질인 Cu와의 반응연구를 실시하여 저온 솔더링 적용시 필요한 정보들을 확인하고자 하였다. 80-200℃ 온도범위에서 Ga과 Cu/Au 기판을 반응시켜 계면반응 및 금속간화합물(IMC) 성장을 관찰하고 분석하였다. 반응계면에서 성장하는 주요한 IMC는 CuGa₂ 상이었으며 그 상부에는 작은 입자크기를 가지는 AuGa₂ IMC 그리고 하부에는 얇은 띠 형상의 Cu₉Ga₄ IMC가 형성되었다. CuGa₂ 입자들은 scallop 형상을 보이며 Cu₆Sn₅ 성장의 경우와 비슷하게 반응시간이 증가함에 따라서 큰 형상변화없이 입자 크기가 증가하였다. CuGa₂ 성장기구를 분석한 결과 120-200℃ 온도범위에서 시간지수는 약 3.0으로 산출되었고, 활성화에너지는 17.7 kJ/mol로 측정되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.133-137
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• 2003

The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1295-1300
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• 2008

During the manufacturing and the service life of Au-Al wire bonded electronic packages, the ball bonds experience elevated temperatures and hence accelerated thermal diffusion reactions that promote the transformation of the Au-Al phases and the IMC growth. In this paper, the IC under high temperature storage (HTS) tests at $175^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ are meticulously investigated. Thermal exposure resulted in the IMC growth, Kirkendall void and the crack of the Au-Al phases. The crack propagation occurs resulting in the failure of the Au-Al ball bonds. As the IC was exposed at the high temperature, decreased in the lifetime.

• 마이크로전자및패키징학회지
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• 제31권1호
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• pp.35-42
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• 2024

최근 반도체 칩의 소형화 및 고집적화에 따라 미세 피치에 의한 범프 브리지 (bump bridge) 현상이 문제점으로 주목받고 있다. 이에 따라 범프 브리지 현상을 최소화할 수 있는 Cu pillar bump가 미세 피치에 대응하기 위해 반도체 패키지 산업에서 널리 적용되고 있다. 고온의 환경에 노출될 경우, 접합부 계면에 형성되는 금속간화합물(Intermetallic compound, IMC)의 두께가 증가함과 동시에 일부 IMC/Cu 및 IMC 계면 내부에 Kirkendall void가 형성되어 성장하게 된다. IMC의 과도한 성장과 Kirkendall void의 형성 및 성장은 접합부에 대한 기계적 신뢰성을 약화시키기 때문에 이를 제어하는 것이 중요하다. 따라서, 본 연구에서는 CS(Cu+ Sn-1.8Ag Solder) 구조 Cu pillar bump의 등온 시효 처리에 따른 접합부 특성 평가가 수행되었으며 그 결과가 보고되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.85-91
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• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• 한국재료학회지
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• 제17권8호
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• pp.402-407
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• 2007

In electronics manufacturing processes, soldering process has generally been used in surface mounting technology. Because of environmental restriction, lead free solders as like a SnAgCu ternary system are being used widely. After soldering process, the formation and growth of intermetalic compounds(IMCs) are formed in the interface between solder and Cu substrate as follows isothermal temperature and time. In this studies, therefore, we investigated the effects of the Cu substrate thickness on the IMC formation and growth of Sn-40Pb/Cu and Sn-3.0Ag-0.5Cu/Cu solder joints, respectively. The effect of the Cu thickness in PCB Cu pad and pure Cu plate was analyzed as measuring of thickness of each IMC. After solder was soldered on PCB and Cu plate which have different Cu thickness, we measured the IMC thickness in solder joints respectively. Also we compared with the effectiveness of Cu thickness on the IMC growth. From these results, we calculated the activation energy.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.30-32
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• 2006

The interfacial reaction and reliability of eutectic Sn-Pb and Pb-free eutectic Sn-Ag ball-grid-array (BGA) solders with an immersion Ag-plated Cu substrate were evaluated following isothermal aging at $150^{\circ}C$. During reflowing, the topmost Ag layer was dissolved completely into the molten solder, leaving the Cu layer exposed to the molten solder for both solder systems. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer was formed at both of the solder/Cu interfaces during reflowing. The thickness of the Cu-Sn IMCs for both solders was found to increase linearly with the square root of isothermal aging time. The growth of the $Cu_3Sn$ layer for the Sn-37Pb solder was faster than that for the Sn-3.5Ag solder, In the case of the Sn-37Pb solder, the formation of the Pb-rich layer on the Cu-Sn IMC layer retarded the growth of the $Cu_6Sn_5$ IMC layer, and thereby increased the growth rate of the $Cu_3Sn$ IMC layer. In the ball shear test conducted on the Sn-37Pb/Ag-plated Cu joint after aging for 500h, fracturing occurred at the solder/$Cu_6Sn_5$ interface. The shear failure was significantly related to the interfacial adhesion strength between the Pb-rich and $Cu_6Sn_5$ IMC layers. On the other hand, all fracturing occurred in the bulk solder for the Sn-3.5Ag/Ag-plated Cu joint, which confirmed its desirable joint reliability.