• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.30-33
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• 2000

Using power semiconductor switches such as IGBTs diodes and L-C circuits novel repetitive impulse voltage generator is developed. In the presented circuits high voltage pulse is generated by series-connection of capacitors and IGBTs. The charging of capacitors and voltage balance of IGBTs is done automatically. To verify the proposed circuit 20kV, 300A pulse generator is manufactured and tested.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.206-209
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• 1999

There exists an acute need for high voltage solid-state-switches in a broad area of applications. With the proposed method using simple voltage balancing circuit with series connected IGBTs, it is realized high voltage semiconductor switches with working voltages of several order kilo-volts. The operation principle of the proposed circuit is explained and analyzed. Transient and static voltage-balancing is tested on a experimenta 3kV/45A switch with four series-connected IGBTs.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.4
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• pp.426-436
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• 1998

Identification of fault current during the operation of a power semiconductor switch and activation of suitable remedial actions are important for reliable operation of power converters. A short circuit is a basic and severe fault situation in a circuit structure such as voltage source converters. This paper presents a new active protection circuit for fast and precise clamping and safe shutdown of fault currents of the IGBTs. This circuit allows operation of the IGBTs with a higher on-state gate voltage, which can thereby reduce the conduction loss in the device without compromising the short circuit protection characteristics. The operation of the circuit is studied under various conditions, considering variation of temperature, rising rate of fault current, gate voltage value, and protection circuit parameters. An evaluation of the operation of the circuit is made using IGBTs from different to confirm the effectiveness of the protection circuit.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.161-164
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• 2000

A simple methode for calculating the forward voltage drop of IGBTs is presented, on the voltage drops on the p+ body, the reverse biased depletion region between p+body and epi-layer, the epi layer, and the forward biased collector junction. The decrease of the total current density in the epi layer near the p+ body is taken into account. The proposed methode allows a simple but accurate determination of the forward voltage drop in IGBTs, avoiding the complex path taken in the previous model for the forward voltage drops on channel, accumulation region, and epi region. Numerical simulations for 1kV NPT-IGBT with a uniformly doped collector are shown to support the analytical results.

• Proceedings of the KSR Conference
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• 2011.10a
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• pp.1298-1302
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• 2011

The present study deals with the results of a thermo-fluid analysis applied to the cooling plate of the water cooling system developed for IGBT stacks, which was designed to keep the power semi-conductors from over heating problems. The cooling plate is to absorb a maximum quantity of 10kW from 4 IGBTs which are to be placed on both sides of the cooling plate, 2 IGBTs of them on each surface. For the analysis, Adina of CFD Program was used and an analysis was conducted to obtain the knowledges on heat and mass flow at both the plate and fluid flow inside. For the simulation, the operational conditions of a temperature difference of $15^{\circ}C$ for the working fluid and a uniform heat flux of about 92000 $W/m^2$ on the surface in contact with an IGBTs.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.43-46
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.148-151
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• 2017

This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.50 no.8
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• pp.408-415
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• 2001

Using power semiconductor switches such as IGBTs, diodes and L-C circuits, novel repetitive impulse voltage generator is developed. In the presented circuits, high voltage pulse is generated by series-connection of capacitors and IGBTs. Therefore, the high voltage pulse is obtained by circuit configuration without any high voltage pulse transformer and high voltage dc source. Especially, the proposed circuit can operate up to several kHz and have high reliability and longer life than conventional ones. In also gives voltage balance of IBGTs automatically. So, the difference of characteristics of IGBTs and drive signal does not cause severe problems. To verify the proposed circuit, 20kV and 300A pulse generator is manufactured and tested.

• Journal of Power Electronics
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• v.16 no.2
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• pp.769-777
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• 2016

This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented. These strategies are based on the modification of transistor gate-emitter control voltage V_GE by using an active gate driver circuit. The first strategy relies on the calculation of the average value of the current flowing through all parallel-connected IGBTs. The second strategy is proposed by the authors on the basis of a current cross reference control scheme. Finally, the simulation and experimental results of the application of the two current sharing control algorithms are presented.