• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.10a
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• pp.286-290
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• 2001

This paper presents a full-digital low-level controller for a robotic material transfer system which has been developed for a computer-integrated manufacturing model plant. Compared to conventional analog or hybrid type controllers in current industrial environments, this controller system has some advantages such as strong noise-immunity, easy control algorithm implementation, etc The servo-controller consists of two modules, a position controller and a DC servo motor driver. The position controller operates position feedback routines by receiving position encoder data and sending control outputs to the driver. The position controller is implemented in a full-digital way using a recently introduced microcontroller. The DC servomotor driver controls speeds and torques. The driver consists of a micro-controller and insulated-gate-bipolar-transistors (IGBT). The micro-controller provides control signals, and the IGBT's amplifies the control signals and sends them to the motor.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.485-486
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• 2015

This paper introduces the new 1200V $SPM^{(R)}$ (Smart Power Module), which is fully optimized and intelligent integrated IGBT inverter modules for up to 6kW motor drive applications. It utilizes newly developed NPT trench IGBT with the advanced STEALTHTM freewheeling diode, and built-in bootstrap diode. HVICs, multi-function LVIC, and built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC(Direct Bonded Copper) substrate for the better thermal performance. This paper provides an overall description of the newly developed 1200V/35A $SPM^{(R)}$ 2 product.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.197-200
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• 2001

This paper presents a PWM buck AC-AC converter with instantaneous compensation for input voltage sag and surge. The presented converter use commercial IGBT modules and its output voltage is regulated so as to remain constant AC output voltage. The feedforward control technique is also proposed to establish instantaneous duty level change whereby stable output voltage will be retained. This paper show the characteristics and control algorithm of the converter through various PSPICE simulations.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.6
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• pp.496-502
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• 2020

The reliability of a solid-state transformer (SST) is one of the important aspects to consider when replacing a conventional low-frequency passive transformer with SST for urban railway vehicles. Lifetime evaluation of SST in the design phase is therefore essential in guaranteeing a certain SST reliability. In this study, a lifetime evaluation of power semiconductor devices in SST is performed with respect to temperature stress. For a case study, a 3 MW SST with three kinds of power modules (one IGBT module and two SiC-MOSFET modules) is used for the lifetime estimation under the operation profile of urban railway vehicles.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.73-80
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• 2016

The preliminary test for the dual mode plasma torch system was carried out to explore the operation properties in advance. The dual mode plasma torch system that is able to operate in transferred, non-transferred, or dual mode is very adequate for melting the mixed wastes including nonconductive materials such as concrete, asbestos, etc. since it exploits both the high efficiency of heat transfer to the melt in transferred mode and stable operation in non-transferred mode. Also, system operation including restarting is reliable and very easy. A stationary melter with a refractory structure was designed and manufactured considering the melting behavior of slags to minimize the refractory erosion. The power supply for the dual mode plasma torch system built with high power insulated gate bipolar transistor (IGBT) modules has functions for both current control and voltage control and is sufficient to suppress the harmonics during the operation of the plasma torch. The power supply provides two different voltages for transferred operation and non-transferred. It is confirmed that the operation voltage in transferred is always higher than non-transferred. The dual mode plasma torch system was successfully developed and is under operation for a melting experiment to optimize operation data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.507-510
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• 2003

This paper presents a novel prototype of tile three-phase bridge power block module type a auxiliary resonant AC link snubber circuit, which is effectively used for the three-phase voltage source type sinewave soft switching PWM inverter using IGBTs. Its operating principle Is described for current source load model, along with its practical design approach based on the simulation data. The performance evaluation of the three-phase voltage source type snewave soft switching PWM inverter incorporating a single three-phase bridge mo여le of active auxiliary resonant AC link snubber treated here Is illustrated, which is concerned with power duality efficiency power loss analysis. This inverter is discussed as compared with those of tile three-phase voltage source type sinewave hard switching PWM inverter. The power loss analysis of this soft switching PWM Inverter using IGBT power modules is evaluated on the basis of the measured v-i characteristics and switching power losses of IGBT, and antiparaliel diodes. The practical effectiveness of this inverter is proven by the power loss analysis for distributed power supply.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.3
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• pp.540-548
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• 2007

The parer proposes a power factor correction high efficiency PWM single-phase rectifier. Its good characteristics such as simple PWM control, low switch stress, and low VAR rating of commutation circuits make the proposed rectifier very suitable for various unidirectional power applications. In addition, the proposed rectifier consists of three boost-converter-type IGBT modules with the switching devices located at the bottom leg of the rectifier scheme, which also enables the use of the same power supply in both control and gate driver, thus resulting in simple control and power circuit structure. The detailed principle of operation and experimental results are also included. In particular, the design guide line is also suggested to make the circuit design of the proposed rectifier easy and fast.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.158-163
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• 2023

Recently, the global demands for high voltage power semiconductors are increasing across various industrial fields. The use of electric cars with high safety and convenience is becoming practical, and IGBT modules of 3.3 kV and 1.2 kA or higher are used for electric locomotives. Delicate design and advanced process technology are required, and research on the optimization of high-voltage IGBT parts is urgently needed in the industry. In this study, we attempted to design a simulation process through TCAD (technology computer-aid design) software to optimize the process conditions of the fielding process among the core unit processes for an especial high yield voltage. As well, the prior circuit technology design and a ring pattern with a large number of ring formation structures outside the wafer similar to the chip structure of other companies were constructed for 3.3 kV NPT-IGBT through a unit process demonstration experiment. The ring pattern was designed with 21 rings and the width of the ring was 6.6 ㎛. By changing the spacing between patterns from 17.4 ㎛ to 35.4 ㎛, it was possible to optimize the spacing from 19.2 ㎛ to 18.4 ㎛.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.488-491
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• 2006

In this paper proposed method of maximum power point tracking using boost converter for a connected single phase inverter with photovoltaic system. The maximum power point tracking control is based on generated circuit control MOSFET switch of boost converter and single phase inverter uses predicted current control to control four IGBT's switch in full bridge. The predicted current control provide current with sinusoidal wave shape and inphase with voltage. The generation control circuit allows each photovoltaic module to operate independently at peak capacity, simply by detecting of the output power of the system. Furthermore, the generation control circuit attenuates low-frequency ripple voltage, which is caused by the full-bridge inverter, across the photovoltaic modules. Consequently, the output power of system is increased due to the increase in average power generated by the photovoltaic modules. The effectiveness of the proposed inverter system is confirmed experimentally and by means of simulation.