• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.703-707
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• 2001

The demand for protection of power electronic applications has during the last couple of years increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight increase the over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection. First, the problem of adding inductance of existing High-Speed and new Typower fuses in DC-link circuit is treated, second a short discussion of the protection of the IGBT module is done, and finally, the impact of the high frequency loading on the current carrying capability of the fuses is presented.

• Journal of Power Electronics
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• v.2 no.2
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• pp.88-94
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• 2002

The demand for protection of power electronic application has during the last couple of vears increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight inductance over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection of adding inductance of existing High-speed and new Typower Fuse protection. First, the problem of adding inductance of exiting High-speed and new Typower Fuse DC-link circuit is treated, second a short discussion of protection of the IGBT module is done, and finally, the impect of the high frwquency loading on the currying capability of the fuses is presented.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.11a
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• pp.77-81
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• 1999

• Journal of Power Electronics
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• v.9 no.3
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.

• 전기산업
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• v.4 no.1
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• pp.57-68
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• 1993

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.4
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• pp.291-297
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• 2022

This Paper is about the study that design performance and reliability measurement circuits of the IPM which is an intelligent switching switch module included at an inverter circuits for driving of A.C. Servo motors in home appliance. IPM is a core device of motor driver and it's switching characteristics should be retained uniformly during the driving of a servo system. All of it's specification, the collector emitter switch on voltage Vce(on) spec. is very important. As the IPM are core part of inverters and producing from several brands and versions, for optimal performances of application systems a method and measurement & evaluation system to measure Vce(on) value, collector emitter switch on voltage, of the IPM IGBT switches with various brands are required. Especially, the proposed method can measure and evaluate Vce(on) values of IPM with load at mounting state on the motor driving circuits and proposed measurement & evaluation system can be important instrument systems for IPM user companies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.147-148
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• 2005

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, thermal distribution of the Insulated Gate Bipolar Transistor Module has been studied with different conditions and heat sink materials. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.323-327
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• 1998

Under high power IGBTs Switching, a large overvoltage is induced across the IGBT module due to the stray inductance in the circuit. This paper proposes a new gate drive circuit for high power IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.970-977
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• 2014

In this paper, the artificial neural network is used to predict the junction temperature of the IGBT power module, by measuring the temperature sensitive electrical parameters (TSEP) of the module. An experiment circuit is built to measure saturation voltage drop and collector current under different temperature. In order to solve the nonlinear problem of TSEP approach as a junction temperature evaluation method, a Back Propagation (BP) neural network prediction model is established by using the Matlab. With the advantages of non-contact, high sensitivity, and without package open, the proposed method is also potentially promising for on-line junction temperature measurement. The Matlab simulation results show that BP neural network gives a more accuracy results, compared with the method of polynomial fitting.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.485-486
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• 2015

This paper introduces the new 1200V $SPM^{(R)}$ (Smart Power Module), which is fully optimized and intelligent integrated IGBT inverter modules for up to 6kW motor drive applications. It utilizes newly developed NPT trench IGBT with the advanced STEALTHTM freewheeling diode, and built-in bootstrap diode. HVICs, multi-function LVIC, and built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC(Direct Bonded Copper) substrate for the better thermal performance. This paper provides an overall description of the newly developed 1200V/35A $SPM^{(R)}$ 2 product.