• 대한화학회지
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• 제34권1호
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• pp.69-75
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• 1990

모자나이트 광물 중에 포함된 각각 희토류 원소를 이온회합 크로마토그래피 방법으로 분리 및 정량하였다. 정량하기 전에 양이온교환수지(Dowex 5OW-X8) 칼럼으로 희토류 원소를 집단 분리하였다. 이 때 수지 칼럼에 의하여 희토류 원소가 정량적으로 회수되며, 시료 중의 공존이온으로부터 깨끗이 분리됨을 방사성 추적자 및 유도쌍 결합 분광-질량분석법(ICP-MS)으로 각각 확인 하였다. 역상 칼럼($\mu$-Bondapak $C_{18}$)에 의하여 미량(ppm)의 희토류 원소를 pH 4.6의 $\alpha$-hydroxyisobutyric acid으로 0.05M부터 0.3M까지 기울기 용출하여 각각 분리하였다. 희토류 원소와 PAR (4-(2-pyridylazo)-resorcinol monosodium salt)과의 포스터 칼럼 착색반응을 통하여 각각의 희토류 원소를 검출하였다.

• Nuclear Engineering and Technology
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• 제45권3호
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• pp.415-420
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• 2013

A determination method for $^{237}Np$ in spent nuclear fuel samples was developed using an isotope dilution method with $^{239}Np$ as a spike. In this method, inductively coupled plasma mass spectrometry (ICP-MS) was taken for the $^{237}Np$ instead of the previously used alpha spectrometry. $^{237}Np$ and $^{239}Np$ were measured by ICP-MS and gamma spectrometry, respectively. The recovery yield of $^{237}Np$ in synthetic samples was $95.9{\pm}9.7$% (1S, n=4). The $^{237}Np$ contents in the spent fuel samples were 0.15, 0.25, and $1.06{\mu}g/mgU$ and these values were compared with those from ORIGEN-2 code. A fairly good agreement between the measurements (m) and calculations (c) was obtained, giving ratios (m/c) of 0.93, 1.12 and 1.25 for the three PWR spent fuel samples with burnups of 16.7, 19.0, and 55.9 GWd/MtU, respectively.

• 한국식품영양과학회지
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• 제30권1호
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• pp.32-36
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• 2001

국내에서 생산된 채소류 15종 620건에 대해 수은 함량은 Mercury analyzer로, 납, 카드뮴, 비소, 구리 , 망간, 아연 등은 습식분해 후 ICP로 분석하였다. 본 연구 결과, 채소중 미량금 속 함량(최소~최대(평균), mg/kg)은 수은 0.0001~0.019 (0.002), 납 0.001~0.28(0.02), 카드뮴 0.001~0.078(0.016), 비소 0.001~0.06(0.02), 구리 0.06~24.81(0.77), 망간 0.17~15.12(2.32), 아연 0.13~28.70(2.51)으로 나타났다. 본 연구에서 얻어진 분석치들은 국내외 다른 연구자들의 분석치와 비슷한 것으로 나타났으며, 이는 우리나라에서 생산된 채소류중의 미량 금속 함유량은 오염된 수준이 아닌 자연 함유량 수준인 것으로 파악되었으며, 우리나라 사람이 이들 농산물로 부터 섭취하는 미량급속의 양은 안전한 것으로 판단된다. 또한 우리나라 국민이 채소류를 통해 섭취하는 납, 수은, 카드뮴 등의 중금속 주간섭취량은 FAO/WHO에서 중급속 안전성 평가를 위해 정한 PTWI의 2~7%를 차지하고 있다.

• 한국동물위생학회지
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• 제33권3호
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• pp.299-302
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• 2010

This study was conducted to determine the content of heavy metals in meats available on the Korean markets. Trace metals (Pb, As and Cd) were detected in 4 kinds, 172 samples by inductively coupled plasma-mass spectrometry (ICP-MS). The values of heavy metals in meats were as follows; In beef, mean (minimum~maximum) values of the heavy metals were Pb: 0.075 (0.020~0.190)mg/kg, As: 0.010 (0.001~0.050)mg/kg and Cd: 0.43(0.07~2.11)${\mu}g/kg$. In pork, mean (minimum~maximum) values of the heavy metals were Pb: 0.065 (0.012~0.171)mg/kg, As: 0.004 (ND~0.021)mg/kg and Cd: 0.43(0.08~1.09)${\mu}g/kg$. In chiken, mean (minimum~maximum) values of the heavy metals were Pb: 0.060(0.016~0.211)mg/kg, As: 0.008 (ND~0.042)mg/kg and Cd: 0.42 (0.02~3.80)${\mu}g/kg$. In duck, mean (minimum~maximum) values of the heavy metals were Pb: 0.070 (0.011~0.157)mg/kg, As: 0.005 (0.001~0.011)mg/kg and Cd: 0.87 (0.15~3.75)${\mu}g/kg$. This results will be used as a basic data for the future legislation on the regulation and control of heavy metal in meats.

• Bulletin of the Korean Chemical Society
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• 제25권2호
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• pp.233-236
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• 2004

Total impurity analysis of a primary standard solution is one of the essential procedures to determine an accurate concentration of the standard solution by the gravimetry. Bi impurity is determined in Pb standard solutions by inductively coupled plasma mass spectrometry (ICP-MS). The direct nebulization of the Pb standard solution produces a significant amount of the Pb matrix-induced molecular ions which give rise to a serious spectral interference to the Bi determination. In order to avoid the spectral interference from the interferent $^{208}PbH^+$, the hydride generation method is employed for the matrix separation. The Bi hydride vapor is generated by reaction of the sample solution with 1% sodium borohydride solution. The vapor is then directed by argon carrier gas into the ICP after separation from the mixture solution in a liquid-gas separator made of a polytetrafluoroethylene membrane tube. The presence of 1000 ${\mu}$g/mL Pb matrix caused reduction of the bismuthine generation efficiency by about 40%. The standard addition method is used to overcome the chemical interference from the Pb matrix. Optimum conditions are investigated for the hydride-generation ICPMS. The detection limit of this method is 0.5 pg/mL for the sample solutions containing 1000 ${\mu}$g/mL Pb matrix.

• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.595-598
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• 2011

Cetirizine hydrochloride reacted with $BiI_4^-$ in an acidic aqueous solution to form precipitate. After centrifugation, the atomic emission intensity of $Bi^{3+}$ contained in the supernatant solution was measured at the characteristic wavelength of 206.170 nm. The difference between the spectral signal intensity of the blank solution and that of the supernatant, ${\Delta}I$, was linearly related to the concentration of cetirizine hydrochloride. As a result, a new inductively coupled plasmaatomic emission spectrometric (ICP-AES) method was developed for the analysis of cetirizine hydrochloride. The linear range was from 27.7 to 184.8 $mg{\cdot}L^{-1}$, with a correlation coefficient (r) of 0.9961 and a detection limit of 9.6 $mg{\cdot}L^{-1}$. This method is simple and accurate, Without using toxic organic solvents, and is feasible for the quality control of cetirizine hydrochloride tablets and capsules.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.118-118
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• 1999

CVD방법에 의한 TiN 박막 형성에 있어서 ICP-CVD 방법이 대두되고 있다. 이것은 precursor에 대한 radical 형성, 식각된 패턴에서 양 벽의 self-shadowing 효과, 낮은 tress등으로 dense 한 박막을 얻을 수 있기 때문이다. TiN 박막은 Si 기판의 온도를 상온에서 50$0^{\circ}C$까지 유지하면서 TEMAT의 유량을 5-20sccm으로 변화시키면서 증착하였다. 증착 후 TiN 박막의 결정화에 따른 열처리는 Ar과 N2-가스분위기에서 in-situ로 증착하였다. 증착 후 TiN 박막증착 조건수립에 따른 플라즈마 특성진단은 전자의 온도와 밀도, 평균 전자밀도, 이온 에너지 분포, radical 분포, negative 이온분포 등으로 측정하였다. 플라즈마 변수에 따른 TiN 박막의 결정성과 상 변화는 XRD로 분석하였고, 조성비 및 TiN 박막의 원소화학적 상태, 결합에너지, 각 상에 따른 결합 에너지 천이정도, 초기 형성과정 및 반응기구 등은 RBS와 XPS로 조사하였다. TiN 박막의 표면상태, morphology 거칠기, TiN/Si(100)구조에서 계면상태 등은 SEM, AFM, 그리고 HRTEM으로 분석하였다. TiN 구조 박막의 비저항, carrier concentration 그리고 mobility 측정은 박막의 표면이 균일하고 bls-홀이 없는 것으로 하여 4-point probe 방법으로 측정하였다. 이들 분석으로부터 ICP-CVD 방법에 의하여 형성된 TiN 박막이 초고집적 반도체 소자의 contact barrier layer로서의 적용 가능성을 평가하였다.

• Archives of Pharmacal Research
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• 제23권5호
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• pp.471-476
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• 2000

DA-8159, a new phosphodiesterase 5 inhibitor, was assessed for its erectogenic potential by a penile erection test in rats, the relaxation of isolated rabbit corpus cavernosum (CC), and estimation of the intracavernous pressure (ICP) in the anesthetized dog. Oral administration of DA-8159 (0.3 to 1 ${\mu}g/kg$ ) increased the number of erections in rats with increasing dosage, with the highest penile erection index at 10 ${\mu}g/kg$ DA-8159 induced the relaxation of phenylephrine (PHE)-induced contractions in the rabbit CC and decreased the $IC_{50}$ of the nitric oxide donor sodium nitroprusside (SNP) in a dose-dependent fashion. In pentobarbital-anesthetized dogs, the intravenous administration of DA-8159 (1~300 ${\mu}g/kg$ ) potentiated the increase in ICP induced by the intracavernosal SNP in a dose-related manner. These findings suggest that DA-8159 has significant therapeutic potential in the treatment of erectile dysfunction.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.244-250
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• 2008

An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{\mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{\mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${\sim}4{\mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{\mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${\sim}0.5{\Omega}$ and via inductance value measured was $\sim$83 pH.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.188-189
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• 2007

The etching characteristics of $Al_2O_3$ films using the inductively coupled plasma (ICP) was investigated. The etch gas was the mixture of $BCl_3$ and He. The effect of ICP source and bias powers on etch rate and etch selectivity to polycrystalline Si was investigated in the etch process of $Al_2O_3$. The etch rate of $Al_2O_3$ film was 23nm/min when the source power and bias power were 600W and 60W, respectively. The results also indicated that the etch selectivity to polycrystalline Si could not be enhanced to be higher than 1.0 by changing the ICP source power and bias power, under the experimental conditions used in the present work. Based on plasma parameters extracted from Langmuir probe data, the etching mechanism of $Al_2O_3$ film was discussed in detail.