• 제목/요약/키워드: ICP(Inductively Coupled Plasma)

검색결과 969건 처리시간 0.028초

Determination of Dibutyltin in Sediments Using Isotope Dilution Liquid Chromatography-Inductively Coupled Plasma Mass Spectrometry

  • Yim, Yong-Hyeon;Park, Ji-Youn;Han, Myung-Sub;Park, Mi-Kyung;Kim, Byung-Joo;Lim, Young-Ran;Hwang, Eui-Jin;So, Hun-Young
    • Bulletin of the Korean Chemical Society
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    • 제26권3호
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    • pp.440-446
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    • 2005
  • A method is described for the determination of dibutyltin (DBT) in sediment by isotope dilution using liquid chromatography inductively-coupled plasma/mass spectrometry (LC-ICP/MS). To achieve the highest accuracy and precision, special attentions are paid in optimization and evaluation of overall processes of the analysis including extraction of analytes, characterization of the standards used for calibration and LC-ICP/MS conditions. An approach for characterization of natural abundance DBT standard has been developed by combining inductively-coupled plasma/optical emission spectrometry (ICP/OES) and LC-ICP/MS for the total Sn assay and the analysis of Sn species present as impurities, respectively. An excellent LC condition for separation of organotin species was found, which is suitable for simultaneous DBT and tributyltin (TBT) analysis as well as impurity analysis of DBT standards. Microwave extraction condition was also optimized for high efficiency while preventing species transformation. The present method determines the amount contents of DBT in sediments with expanded uncertainty of less than 5% and its result shows high degree of equivalence with reference values of an international inter-comparison and a certified reference material (CRM) within stated uncertainties.

유도결합 플라즈마 원자방출분광법 및 질량분석법에서 산의 농도에 의한 영향 (Some Effects of Acid Concentrations in Inductively Coupled Plasma Atomic Emission Spectrometry and Inductively Coupled Plasma Mass Spectrometry)

  • 조만식;임흥빈;김영상;이광우
    • 분석과학
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    • 제5권3호
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    • pp.277-283
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    • 1992
  • 질산, 염산, 황산 그리고 질산과 염산의 1:1 혼산의 농도를 변화시키면서 유도결합 플라즈마 원자방출분광법(ICP-AES)의 신호크기에 미치는 산의 영향을 연구하였다. 거의 모든 측정원소의 신호크기가 감소되었다. 산의 존재로 인한 감소는 산 농도가 1% 이상 될 때 심하게 눈에 띄었고, 사용된 산 중에서 황산에 의한 감소가 가장 심했으며 그 정도를 예측하기 힘들었다. 산의 농도를 변화시키면서 측정 원소의 신호크기 대 Ar 신호크기의 비, 그리고 Mg II 신호크기 대 Ma I 신호의 비를 측정하였다. 이 연구에서, 신호크기 감소의 주된 원인은 플라즈마 들뜸특성의 변화에 의한 것이 아니고, 분무효율의 변화, 예를 들면 droplet 크기분포, 점도와 표면장략의 변화 등인 것으로 판명되었다. 유도결합 플라즈마 질량분석법(ICP-MS)에서는 신호크기의 감소와 이온화 에너지와의 상관관계는 발견되지 않았다.

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Application of Inductively Coupled Plasma to PVD and CVD

  • 이정중
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 추계학술대회 논문집
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    • pp.43-73
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    • 2015
  • 유도결합 플라즈마(inductively coupled plasma: ICP)를 이용한 물리 및 화학 증착법으로 제작된 박막 재료는 우수한 기계적, 화학적, 물리적 성질 때문에 자동차 부품이나 공구재료의 내마모, 저마찰 경질코팅, 그리고 디스플레이용 코팅 뿐만 아니라 수소 연료전지의 분리막 성능 향상을 위한 코팅, 그리고 기판에 아주 균일한 크기의 나노 분말을 형성 시키는 곳에도 응용을 할 수 있음을 여러 사례를 중심으로 살펴 본다.

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범용성 유도결합 플라즈마 식각장비를 이용한 깊은 실리콘 식각 (The Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher)

  • 조수범;박세근;오범환
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.701-707
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    • 2004
  • High aspect ratio silicon structure through deep silicon etching process have become indispensable for advanced MEMS applications. In this paper, we present the results of modified Bosch process to obtain anisotropic silicon structure with conventional Inductively Coupled Plasma (ICP) etcher instead of the expensive Bosch process systems. In modified Bosch process, etching step ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) step time is much longer than commercialized Bosch scheme and process transition time is introduced between process steps to improve gas switching and RF power delivery efficiency. To optimize process parameters, etching ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) time and ion energy effects on etching profile was investigated. Etch profile strongly depends on the period of etch / passivation and ion energy. Furthermore, substrate temperature during etching process was found to be an important parameter determining etching profile. Test structures with different pattern size have been etched for the comparison of the aspect ratio dependent etch rate and the formation of silicon grass. At optimized process condition, micropatterns etched with modified Bosch process showed nearly vertical sidewall and no silicon grass formation with etch rate of 1.2 ${\mu}{\textrm}{m}$/ min and the size of scallop of 250 nm.

INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY FOR THE DETERMINATION OF 237Np IN SPENT NUCLEAR FUEL SAMPLES BY ISOTOPE DILUTION METHOD USING 239Np AS A SPIKE

  • Joe, Kihsoo;Han, Sun-Ho;Song, Byung-Chul;Lee, Chang-Heon;Ha, Yeong-Keong;Song, Kyuseok
    • Nuclear Engineering and Technology
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    • 제45권3호
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    • pp.415-420
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    • 2013
  • A determination method for $^{237}Np$ in spent nuclear fuel samples was developed using an isotope dilution method with $^{239}Np$ as a spike. In this method, inductively coupled plasma mass spectrometry (ICP-MS) was taken for the $^{237}Np$ instead of the previously used alpha spectrometry. $^{237}Np$ and $^{239}Np$ were measured by ICP-MS and gamma spectrometry, respectively. The recovery yield of $^{237}Np$ in synthetic samples was $95.9{\pm}9.7$% (1S, n=4). The $^{237}Np$ contents in the spent fuel samples were 0.15, 0.25, and $1.06{\mu}g/mgU$ and these values were compared with those from ORIGEN-2 code. A fairly good agreement between the measurements (m) and calculations (c) was obtained, giving ratios (m/c) of 0.93, 1.12 and 1.25 for the three PWR spent fuel samples with burnups of 16.7, 19.0, and 55.9 GWd/MtU, respectively.

E-H Mode Transition Properties of Cylindrical ICP Hg:Kr

  • Yang Jong-Kyung;Pack Kwang-Hyun;Lee Jong-Chan;Park Dae-Hee
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권3호
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    • pp.124-130
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    • 2005
  • In this paper, we designed a cylindrical type light source having an electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the transformer principle, an electrically equivalent circuit cylindrical type light source was analyzed. According to the parameters of electromagnetic induction, which were diameter of coil with cpO.3$\~$ 1.2mm, number of turns with 4$\~$ 12 turns, distance with 40$\~$ l20mm and RF power with 10$\~$ 150W, the electrical .md optical properties were measured. When the diameter of the coil was cp0.3mm, number of turns was 8 and distance was 40mm, and the maximum brightness of 29,730 cd/m$^{2}$ was shown with RF power l50W. The relationship between electromagnetic induction and plasma discharges was demonstrated using the mode transition from E-mode to H-mode

무전극 형광램프용 안테나 설계를 위한 전기적 특성 시뮬레이션 (Electrical Characteristics of Antenna for Electrodeless Fluorescent Lamp Using the Electromagnetic Simulation)

  • 허인성;김광수;최용성;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
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    • pp.61-64
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    • 2004
  • Recently, the RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. To the point of lighting sources, the electrodeless fluorescent lamps utilizing an inductively coupled plasma (ICP) have been objects of interest and research during the last decades, mainly because of their potential for extremely long life, high lamp efficacies, rapid power switching response. The electrodeless fluorescent lamp that is dealt with in this work comprises a bulb filled with rare gas and amalgam of vaporizable metal and has a coil provided with a winding around the ferrite. Current through a coil produces a magnetic field in the discharge space. The changing magnetic flux then produces an azimuthal electric field E around the coil, according to Faraday's laws of magnetic induction.

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$BCl_3$/He 플라즈마를 이용한 $Al_2O_3$ 박막 식각특성 연구 (Etching Characteristics of $Al_2O_3$ film Using $BCl_3$/He Plasma)

  • 이현우;윤선진;김만수;권광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.188-189
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    • 2007
  • The etching characteristics of $Al_2O_3$ films using the inductively coupled plasma (ICP) was investigated. The etch gas was the mixture of $BCl_3$ and He. The effect of ICP source and bias powers on etch rate and etch selectivity to polycrystalline Si was investigated in the etch process of $Al_2O_3$. The etch rate of $Al_2O_3$ film was 23nm/min when the source power and bias power were 600W and 60W, respectively. The results also indicated that the etch selectivity to polycrystalline Si could not be enhanced to be higher than 1.0 by changing the ICP source power and bias power, under the experimental conditions used in the present work. Based on plasma parameters extracted from Langmuir probe data, the etching mechanism of $Al_2O_3$ film was discussed in detail.

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Spray-ICP technique에 의한 $SnO_2$미분말 합성 및 박막 제조 (Synthesis of ultrafine particles and thin films of $SnO_2$ by the spray-ICP technique)

  • 김정환;박종현;김영도;신건철
    • 한국결정성장학회지
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    • 제8권3호
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    • pp.487-492
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    • 1998
  • ICP(Inductively Coupled Plasma)를 열원으로 출발용액의 농도변화 및 $TiO_2$ 첨가로 $SnO_2$$(Sn,Ti)O_2$미분말을 합성하였으며 SnO2 박막을 제조하였다. 각각 합성된 $SnO_2$ 미분말은 모두 tetragonal의 rutile형으로서 입자들의 평균입경은 30nm로 매우 미세하였으며, 좁은 입도분포를 나타내었다. $TiO_2$를 첨가하였을 경우 $SnO_2-TiO_2$ 미분말은 고용체를 이루었으며, 첨가량이 증가함에 따라 결정성은 감소하였다. ICP tail flame으로 fused quartz 기판을 가열하여 (101)면을 주 peak로 하는 $SnO_2$ 박막을 얻었다.

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유도결합 플라즈마(ICP) Sputtering에 의한 평판 디스플레이(FPD)용 ITO 박막의 저온 증착 (Low Temperature Deposition of ITO Thin Films for Flat Panel Displays by ICP Assisted DC Magnetron Sputtering)

  • 구범모;정승재;한영훈;이정중;주정훈
    • 한국표면공학회지
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    • 제37권3호
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    • pp.146-151
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    • 2004
  • Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was >85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.