• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.97-100
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• 2000

Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.613-616
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of 1~9$\times$10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.259-260
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• 2006

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ T orr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1230-1233
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.110-113
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.334-339
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• 1998

$Bi_2Sr_2CuO_x$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of $5.0\times10^{-5}$ Torr is supplied with ultraviolent light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.7-10
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• 2000

Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.97-100
• /
• 2000

Bi$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/. Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.393-394
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• 2005

SBN25 박막을 씨앗층으로 사용하여 이온빔으로 증착한 SBN60/SBN25 다층박막에 대하여 결정화 및 배향 특성을 고찰하였다. 기판은 Pt(111)/TiO2/SiO2/Si(100) 웨이퍼 (Pt 두께 200nm)를 사용하였으며, 약 3000${\AA}$으로 증착한후 650~$750^{\circ}C$에서 후열처리를 하였다. 제작된 박막의 증착조건 및 열처리 조건에 따른 결정화특성 변화에 대하여 연구하였으며, SBN 박막을 MFM 구조의 박막커패시터로 제조하여 강유전특성을 측정하였다.