• Title/Summary/Keyword: IBAD-MgO

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A Study on the Equipment of Neutral Beam Assisted Deposition for MgO Protective Layer of High Efficient AC PDP (고효율 AC PDP용 MgO 보호막 형성을 위한 중성빔 보조 증착 장비에 관한 연구)

  • Li, Zhao-Hui;Kwon, Sang-Jik
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.2
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    • pp.63-67
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    • 2008
  • The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

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Research for Deposition of $CeO_2$ Buffer Layer on Coated Conductor by Electron Beam Evaporation (전자빔 증발법에 의한 박막형 고온초전도체의 $CeO_2$ 버퍼층 증착 연구)

  • Lee, J.B.;Park, S.K.;Kim, H.J.;Moon, S.H.;Lee, H.G.;Hong, G.W.
    • Progress in Superconductivity
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    • v.11 no.2
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    • pp.123-127
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    • 2010
  • The properties of buffer layer for thermal and chemical stability in coated conductor is a very important issue. $CeO_2$ has desirable thermal and chemical stability as well as good lattice match. In this study, $CeO_2$ was deposited by electron beam deposition. The MgO(001) single crystal and LMO buffered IBAD substrate(LMO/IBAD-MgO/$Y_2O_3/Al_2O_3$/Hastelloy) were used as substrates, which have $\Delta\phi$ values of ${\sim}8.9^{\circ}$. The epitaxial $CeO_2$ films was deposited with high deposition rate of $12{\sim}16\;{\AA}/sec$. During deposition, the change of oxygen partial pressure(${\rho}O_2$) does not cause change in c-axis texture. In case of $CeO_2$ on MgO single crystal, the substrate temperature was optimized at $750^{\circ}C$ with superior $\Delta\phi$ and $\Delta\omega$ value. Otherwise, In case of LMO buffered IBAD substrate, It was optimized at $650^{\circ}C$ with increasing its deposition thickness of $CeO_2$, which was finally obtained with best $\Delta\phi$ value of $5.5^{\circ}$, $\Delta\omega$ value of $2^{\circ}$ and Ra value of 2.2 nm.

Fabrication of Thick SmBCO/IBAD-MgO coated conductor (후막 SmBCO/IBAD-MgO 초전도 박막선재의 제조)

  • Lee, J.H.;Kang, D.K.;Ha, H.S.;Ko, R.K.;Oh, S.S.;Kim, H.K.;Yang, J.S.;Jung, S.W.;Moon, S.H.;Youm, D.;Kim, C.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.05a
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    • pp.9-9
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    • 2009
  • Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

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Reel-to-reel electropolishing of Ni alloy tapes for IBAD template (IBAD template용 니켈 합금의 연속 전해연마)

  • Ha H. S;Kim H. K;Ko R. K;Kim H. S;Song K. J;Park C;Yoo S. I;Joo J. H;Moon S. H
    • Progress in Superconductivity
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    • v.6 no.1
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    • pp.69-73
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    • 2004
  • Ni alloy tape is electropolished to be used as a metal substrate for fabrication of IBAD (ion-Beam Assisted Deposition)-MgO texture template fur HTS coated conductor. Electropolishing is needed to obtain a very smooth surface of Ni alloy tape because the in-plane texture of templates is sensitive to the roughness of metal substrate. The critical current of YBCO coated conductor depends on the texture of YBCO that depends on the texture of the IBAD MgO layer. And so the smoothness of the metal substrate is directly related to the superconducting properties of the coated conductor. In this study, we have prepared a reel-to-reel electropolishing apparatus to polish the Ni alloy tapes for IBAD. Various electropolishing conditions were investigated to improve the surface roughness. Hastelloy tape is continuously electropolished with high polishing current density (0.5 ∼ 2 A/$\textrm{cm}^2$) and fast processing time (1 ∼ 3 min). Polished hastelloy tapes have surface roughness(RMS) of below 1 nm on a 5 ${\times}$ 5 $\mu\m^2$ from AFM and SEM.

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Structural and Discharge Characteristics of MgO Deposited by Oxygen-Ion-Beam-Assisted Deposition in AC PDP (산소 이온 빔 보조 증착된 AC PDP용 MgO 보호막의 특성 연구)

  • Li, Zhao-Hui;Kim, Kwang-Ho;Ahn, Min-Hung;Hong, Seng-Jae;Im, Seung-Kyeok;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.338-342
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    • 2007
  • The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). In this paper, we describe the structural and discharge properties of MgO thin films, which were prepared by the ion-beam-assisted deposition (IBAD) of oxygen as the protective layer of PDPs. The energy of the oxygen ion beam was used as the parameter to control the deposition. We found that the oxygen ion beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen ion beam energy of 300 eV. The crystallization of the MgO thin film was also measured by X-ray diffraction analysis, and the surface quality was measured by atomic force microscopy.

Solution deposition planarization for IBAD-MgO texture template

  • Ko, Kyeong-Eun;Kwon, O-Jong;Bea, Sung-Hwan;Yoo, Ja-Eun;Park, Chan;Oh, Sang-Soo;Park, Young-Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.12 no.4
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    • pp.17-19
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    • 2010
  • In this work, the optimized process condition of chemical solution deposition which is used to planarize the surface of the metal tape (which is used to grow IBAD-MgO texture template) was investigated. $Y_2O_3$ films were dip-coated on the surface of the unpolished metal tape as the seed and barrier layer. The effects of $Y_2O_3$ concentration of the solution (0.5wt.%, 1.3wt.%, 2.8wt.%, 5.6wt.%) and the number of coatings on the surface morphology and barrier capability against the diffusion from the metal tape were examined. The surface morphology and the thickness of the film were observed using the scanning electron microscope and the atomic force microscope. The presence of elements in metal tape on the film surface was analyzed using the auger electron spectroscopy. The $Y_2O_3$ film thickness increases with increasing the $Y_2O_3$ concentration in the solution, and the surface became smoother with increasing the number of coating cycles. The best result was obtained from the $Y_2O_3$ film coated 4 cycles using 2.8wt.% solution.

산소 이론 빔 보조 증착 방법으로 형성된 PDP MgO 보초막의 특성 연구

  • Gwon, Sang-Jik;Lee, Jo-Hwi;An, Min-Hyeong;Hong, Seong-Jae
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2007.06a
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    • pp.226-229
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    • 2007
  • MgO 보호막은 플라즈마 디스플레이 패널(Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 본 실험에서는 산소 이온 빔 보조 증착(IBAD) 방법으로 형성된 MgO 보호막의 특성을 조사하였다. MgO 증착시 보조산소이온 빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 발광 특성에 미치는 영향을 분석하였다. 본 연구에서는 산소 이온 에너지가 300 eV 일때 소자의 방전개시 전압이 가장 낮게 나타났다. 또한 산소 이온빔의 조사에너지에 따라 MgO 박막의 결정성 및 표면조도가 크게 영향을 받는 것을 확인할 수 있었다.

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