• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.136-141
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• 2023

The continuous shrinking of transistors in integrated circuits leads to difficulties in improving performance, resulting in the emerging transistors such as nanosheet field-effect transistors. In this paper, we propose a TCAD-machine learning framework of nanosheet FETs to model the current-voltage characteristics. Sentaurus TCAD simulations of nanosheet FETs are performed to obtain a large amount of device data. A machine learning model of I-V characteristics is trained using the multi-layer perceptron from these TCAD data. The weights and biases obtained from multi-layer perceptron are implemented in a PSPICE netlist to verify the accuracy of I-V and the DC transfer characteristics of a CMOS inverter. It is found that the proposed machine learning model is applicable to the prediction of nanosheet field-effect transistors device and circuit performance.

• The Korean Journal of Zoology
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• v.38 no.4
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• pp.523-530
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• 1995

Specific affinity binding sites for atrial natriuretic peptide (ANP) were Investigated in the pig ovarian tissues by in vitro autoradiographic techniques. In the pig ovary, the highest binding sites for 12514abeiled rANP(l~28) were localized in the granulosa cell layer of the forncles. The binding sies on theca layer of the ovarian follicles were mainly localized in the external layer, but none was observed In the Internal layer. In the corpus luteum, the binding site was not observed. The specific bindings of 200 pM of l2Sl4abelled rANP(l~28) to granulosa and theca externa layers were reversed completely by excess concentration (1 ~4) of unlabelled rANP(l~28) but not by 10 ~ of unrelated peptides, human angiotensin II and arginine vasopressin. The binding was also displaced by 1 ~ of desiGIn18, Ser19, Gly2O, leu21, Gly22I ANP(4~2g) (C- ANF) as a spedfic ligand of the ANP clearance receptor. Therefore these results indicate ~hat the biological and the clearance ANP receptors exist in the theca externa and granulosa layer of the pig ovary, and suggest that the ANP receptors may be related with the regulatory lundion of the ovarian follicular development including oocyte maturation.

• YAKHAK HOEJI
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• v.21 no.2
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• pp.110-114
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• 1977

The purified .omicron.-iodobenzoic acid-$^{131}$ I, sodium iodide-$^{131}$I and mixtures of those compounds were applied to radio paper or radio thin layer chromatography to select the developing solvents with useful separation efficiency. The separation efficiencies were checked by radiochromatogram sacnnings. It has been found that the two dimensional radio paper chromatogrphy using the solvent systems of 8% phenol and butanol-glacial acid-water (4:1:1 v/v) and the radio thin layer chromatography using alumina gel plate and butanol- glacial acetic acid- water (4:1:1 v/v) are both efficient. In this method, the Rf value of .omicron.-iodobenzoic acid-$^{131}$ I and the unbound $^{131}$ I is 0.48, 0.85 and 0.15, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• 제어로봇시스템학회:학술대회논문집
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• 1991.10a
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• pp.337-341
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• 1991

Fieldbus is a low level serial digital network which will be used for factory automation. This paper describes lower layer implementation of a Fieldbus network interface. Physical layer provides hardware interface between IBM-PC and Fieldbus. Also, physical layer uses manchester coding, shielded twisted pair lines and RS-485 electrical standard. Data link layer includes Intel's iDCX96 real time executive for 8797 one chip microcontroller and Fieldbus data link protocol software.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1208-1214
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• 2018

The one-step spin coating method is reported as an excellent thin film process because it can be easily used to fabricate high-quality methyl-ammonium lead tri-iodide ($MAPbI_3$) perovskite layers. One of the important things in the one-step spin coating method towards obtaining high-quality $MAPbI_3$ layers is the anti-solvent (AS) engineering, which consists of an one-step deposition of the $MAPbI_3$ film and dripping of the AS. The properties of the $MAPbI_3$ layer were found to be strongly influenced by the amount, dispensing speed, and spraying time of the AS solution. The $MAPbI_3$ solution was prepared by dissolving lead iodide and methyl-ammonium iodide in N,N-dimethylformamide and adding N,N-dimethyl sulfoxide. Diethyl ether (DE) was used for the AS solution. The results indicate that a $MAPbI_3$ layer appropriately sprayed with DE is beneficial for improving film quality and device efficiency because nucleation of $MAPbI_3$ layer is affected by the characteristics of DE, which affect the film's crystallinity, density, and surface morphology. The $MAPbI_3$ layer, which was optimized by using 0.7 mL of DE, a 3.03 mL/sec dispensing speed, and a 7 second time to spray after spinning showed the best efficiency of 13.74%, which was reproducible.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.11B
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• pp.953-959
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• 2006

This paper provides optimum TCP/IP packet size that maximizes the throughput efficiency of ATM layer as a function of TCP/IP packet length for several values of channel BER over wireless ATM LAN links applying data link error control schemes to reduce error problems encountered in using wireless links. For TCP/IP delay-insensitive traffc requiring reliable delivery, it is necessary to adopt data link layer ARQ protocol. So ARQ error control schemes considered in this paper include GBN ARQ, SR ARQ and type-I Hybrid ARQ, which ARQ is needed, but FEC can be used to reduce the number of retransmissions. Especially adaptive type-I Hybrid ARQ scheme is necessary for a variable channel condition to make the physical layer as SONET-like as possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.39-39
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• 2009

We fabricated p-channel TFTs based on poly Silicon. The 35nm thickness silicon dioxide layer structure got higher $I_{on}/I_{off}$ ratio, field-effect Mobility and output current than 10nm thickness. And 35nm layer showed low leakage current and threshold voltage. So, 35nm thickness silicon dioxide layer TFTs are faster reaction speed and lower power consumption than 10nm thickness.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.33 no.2
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• pp.141-148
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• 1997

This paper is concerned with the vibration control of multi-layer structure for ultra-tall buildings and main tower of large bridge etc. We have modeled the multi-layer structure with the distributed mass system as the lumped mass system of two-degree-of-freedom structure and made experimental equipment. The LQ optimal control theory is applied to the design of the control system. The designed control system is simulated by computer. As a result, the LQ regulator showed good vibration control performance with impact excitation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.245-245
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• 2008

In this work, we describe the characterization of PVP films synthesized by spin-coater method and fabricate OTFTs of a bottom gate structure using pentacene as the active layer and polyvinylphenol (PVP) as the gate dielectric on Au gate electrode. We investigated the surface and electrical properties of PVP layer using an AFM method and MIM structure, and estimated the device properties of OTFTs including $I_D-V_D$, $I_D-V_G$, threshold voltage $V_T$, on/off ratio, and field effect mobility.