• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.137-140
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• 1993

Electrical properties and thermal annealing effects of $C_{22}$-quinolium(TCNQ) Langmuir-Blodgett(LB) films were studied. Typical current-voltage(I-V) characteristics along the perpendicular direction chow an anomalous behavior of breakdown near the electric-field strength of $10^{6}$V/cm. To see the thermal influence of the specimen, current was measured as a function of temperature(20∼$180^{\circ}C$). It shows that the current increases about 4 orders of magnitude near 60∼$70^{\circ}C$ and remains constant far a while up to ∼$150^{\circ}C$ and then suddenly drops. Such increase of current near 60∼$70^{\circ}C$ seems tn be related to a softness of alkyl chains. Besides the electrical measurements, UV/visible absorption(300∼800 nm) of the thermally annealed sample was measured to see the internal-structure change. It is found that there are four characteristic peaks. At 494 nm, the optical absorption of the thermally annealed specimen at $60^{\circ}C$ starts increase and stays almost constant upto∼ $140^{\circ}C$. And eventually it disappears above $180^{\circ}C$. After heat treatment of the specimen up to $150^{\circ}C$, Uv/visible absorption was measured while cooling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Bulletin of the Korean Chemical Society
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• v.29 no.5
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• pp.1048-1050
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• 2008

Electric current flow was observed through imogolite film when imogolite ($(HO)_3Al_2O_3SiOH$) was exposed to water molecules and connected to external electrodes. Current flow was due to the bound water on the surface of imogolite. Current flow increased as the pH of the water decreased. The current-voltage (I-V) measurements from a field effective transistor (FET) using $H_2O$/imogolite film revealed that the current carrier in $H_2O$/ imogolite had p-type characteristics, i.e. the carrier was probably $H^+$. The possible mechanism for current transportation in imogolite/water was also suggested in this paper.

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.306-311
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• 2007

The transient fields generated during switching operations in a Gas Insulated Substation (GIS) are associated with high frequency components in the order of few tens of MHz. These transient fields leak into the external environment of the gas-insulated equipment and can interfere with the nearby electronics. Measurements of the transient fields are thus required to characterise the interference caused by switching phenomena in such substations. In view of the above, E-field emission measurement during a switching operation has been carried out for a 245 kV GIS model, using a resonant dipole antenna and D-dot sensor. The characteristics of the E-fields i.e., frequency spectra and their levels have been analysed and are reported in the paper. Suitability of the measurements has been confirmed by comparing frequency spectra of the measured and computed transient fields.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.135-140
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• 2018

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.1
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• pp.39-44
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• 1996

The discharge capacity of V-Ti-Ni(V-rich) metal hydride electrode during the charge-discharge cycling was investigated in KOH electrolyte. All electrodes were degraded within 25 cycles. To investigate the cause of the degradation phenomena impedance measurements were performed by using E.I.S(electrochemical impedance spectroscopy). The surfaces of the degraded electrodes were examined by Auger electron spectroscopy (AES). It was observed that all electrodes were covered with oxygen from the surface to the bulk, titanium was enriched near surface, and vanadium was dissolved from the surface to the bulk.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.527-533
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• 1990

The AgI systems containing various mol% of AgBr and CuI were synthesized. X-ray analyses revealed that all synthesized systems had face centered cubic structures. Using impedance analyzer, electrical conductivity measurements of these systems were carried out at temperatures from 20 to 200$^{\circ}C$. From this measurement, it was found that the activation energies of these systems were in the range 0.6∼0.7 eV and the system containing 5 mol% AgBr showed the highest conductivity and the smallest activity energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1978-1982
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• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• 연구논문집
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• s.27
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• pp.175-181
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• 1997

Superconducting joints between Bi-2223/Ag tapes are fabricated by a press & reaction anneal and a multiple press & anneal. The silver sheath was mechanically or chemically removed from one side of each tape without altering the superconducting core. The exposed superconducting core of the two tapes were brought into contact and pressed so as to form a lap joint. The joined tapes were then subjected to a series of different thermomechanical treatments to achieve optimum heat treatment condition. The result from transport measurements shows that critical current ($I_c$) transmitting through joined area reaches 9A, approximately 60% of the current capacity of the tapes themselves. The critical current through joined area was improved by repeated press and reaction annealing. Measurements of the current-voltage relationship were made with several configuration of the voltage probes to characterize the critical current variation and I-V curve along the joint. Also discussed are microstructural aspects of the superconducting joint.