• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1232-1236
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• Advances in materials Research
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• v.4 no.2
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• pp.113-132
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• 2015

The phenomena of high-voltage polarization and conductivity in oriented vinylidenefluoride and tetrafluoroethylene copolymer films have been investigated. It was shown that under certain electric fields, injection of carriers from the material of electrodes appears The barrier for holes injection in the copolymer was found to be lower than that for electrons. It results in more effective screening of the external field near the anode than near cathode. Electrones, ejected from cathode, creating negative charge by trapping on the surface. It is shown that the electrons injected from cathodes create a negative homocharge on the copolymer surface and then become captured on the surface shallow traps. Their nature has been studied by the x-ray photoelectron spectroscopy. It was shown that these traps may consist of chemical defects in the form of new functional groups formed by reactions of surface macromolecules with sputtered atoms of aluminum. The asymmetric shape of hysteresis curves was explained by the difference in mobility of injected holes and electrons. These factors caused appearance of "non-closed" hysteresis curves for fluorine-containing polymer ferroelectrics. Hysteresis phenomena observed at low electric fields (below coercive ones) are to associate with the behavior of the domains localized in the ordered regions formed during secondary crystallization of copolymers.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.313-318
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• 2004

Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of Astronomy and Space Sciences
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• v.24 no.2
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• pp.99-110
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• 2007

A total of 824 observations (206 in ${\Delta}B$, 206 in ${\Delta}V$, 206 in ${\Delta}R$, 206 in ${\Delta}I$ for CC Com were made on 3 nights from March 3 to April 3 in 2002 using the 61cm telescope with 2K CCD camera of the Sobaeksan Optical Astronomy Observatory of KASI. From our observations 9 times of minimum light were newly determined. Combined analysis of our new BVRI light curves with the double-lined radial velocity curves of Pribulla et al. (2007) were made with the 2004 Wilson-Devinney(WD) binary model code to yield new physical parameters of the CC Com system. Small asymmetries in light curves were explained with the adoption of two hot spots on the cool secondary.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.341-349
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• 2000

CsI(Br) single crystals doped with 1, 3, 5 or 10 mole% $Br^-$ ions, as an activator, were grown by Czochralski method. The lattice structure of grown CsI(Br) single crystal was bcc and its lattice constant was $4.568\;{\AA}$. The absorption edge of the CsI(Br) single crystals was observed at 243 nm. The spectral range of the luminescence excited by 243 nm of wavelength was $300{\sim}600\;nm$, and its peak emission appeared at 440 nm. The luminescence intensity was maximum when CsI(Br) was doped with 3 mole % $Br^-$ ions. The energy resolutions of the CsI(Br) scintillator doped with 3 mole % $Br^-$ ions were 15.0% for $^{137}Cs$(662 keV), 13.1% for $^{54}Mn$(835 keV), and 18.0% and 6.3% for $^{22}Na$(511 keV and 1275 keV), respectively. The decay curves had fast and slow components, and the fast component was about 41 ns independent on the concentration of the $Br^-$ ions. The time resolution of CsI(Br) scintillators decreased with increasing of the concentration of $Br^-$ ions.

• Archives of Pharmacal Research
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• v.29 no.4
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• pp.310-317
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• 2006

We investigated the effects of trinitrobenzene sulfonic acid (TNBS), an amino-group reagent, on the human ether-a-go-go-related gene (HERG) $K^+$ channels expressed in Xenopus oocytes. TNBS neutralizes the positively charged amino-groups of peptide N-terminal and lysine residues. External application of TNBS at 10 mM for 5 min irreversibly shifted the curves for currents at the end of the pulse and tail currents of HERG to a more negative potential and decreased the maximal amplitude of the $I_{tail}$ curve $(I_{tail,max})$. TNBS had little effect on either the activated current-voltage relationship or the reversal potential of HERG current, indicating that TNBS did not change ion selectivity properties. TNBS shifted the time constant curves of both activation and deactivation of the HERG current to a more hyperpolarized potential; TNBS's effect was greater on channel opening than channel closing. External $H^+$ is known to inhibit HERG current by shifting $V_{1/2}$ to the right and decreasing $I_{tail,max}$. TNBS enhanced the blockade of external $H^+$ by exaggerating the effect of $H^+$ on $I_{tail,max}$, not on $V_{1/2}$. Our data provide evidence for the presence of essential amino-groups that are associated with the normal functioning of the HERG channel and evidence that these groups modify the blocking effect of external $H^+$ on the current.

• Membrane Journal
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• v.17 no.1
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• pp.37-43
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• 2007

The effect of anionic and cationic exchange polymer layer on the chronopotentiometry (CP) and current voltage curves (I-V) of charged composite membrane are investigated. Also, the ion transport near the interface between electrolyte and ionic exchange polymer membranes (anionic and cationic ones) and charged mosaic polymer composite membrane is studied. The results show that both anionic and cationic polymer exchange membranes exhibit lower voltage drop over range of applied current density and possess favorable industrial application potentials, especially at low KCl concentration. While the charged mosaic polymer composite membrane didn't show any current-voltage change, irrespective to the type and the concentration of used electrolyte. CP and I-V measurements are effectively used to give some fundamental understanding for ion transport behavior of ion exchange polymer membrane near the interlace.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.117-122
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• 2016

Recently, the detection of pH with real-time and in vivo has been focal pointed in the environmental or medical fields. In this work, we developed the pH sensor using graphene sheet. Graphene has high biocompatibility. We fabricated flexible solution-gated field-effect transistors (SGFETs) on graphene sheet transferred on the polyethylene terephthalate (PET) substrate to detect pH in electrolyte solution. The gate length was $500{\mu}m$ and the gate width was 8 mm. We evaluated the current-voltage (I-V) transfer characteristics of graphene SGFETs in pH solution. The drain-source current ($I_{DS}$) and the gate-source voltage ($V_{GS}$) curves of graphene SGFETs were depended on pH value. The Dirac point of graphene SGFETs linearly shifted to the positive direction about 19.32 mV/pH depending on the pH value in electrolyte solution.

• Progress in Superconductivity
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• v.1 no.2
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• pp.110-114
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• 2000

We have investigated the Josephson vortex dynamics in $Bi_2Sr_2CaCu_2O{8+\delta}$ intrinsic Josephson junctions subjected to a magnetic field parallel to $CuO_2$ planes. We investigated mesas with $40\times40{\mu}m^2$ in size and containing 6 and 20. intrinsic junctions. The zero field I-V characteristics exhibited a typical hysteretic, multi-branched nature of the intrinsic Josephson effect. At high magnetic fields (H>1.5 T), I-V characteristics showed flux flow steps. The Swihart velocity obtained from this observation was about $4.2\times10^5$ m/s, which was the lowest mode electromagnetic wave velocity of N coupled stack. The experimental I-V curves fitted well into the simple model of Cherenkov radiation including Ohmic and non-linear dissipation terms. This suggests that the dissipation mechanism of Josephson vortex be due to both Cherenkov radiation and quasiparticle tunneling current.