• Title/Summary/Keyword: I-V characteristics curve

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열전발전소자 제작 및 발전특성 분석 (Fabrication of Thermoelectric Module and Analysis of its Power Generation Characteristics)

  • 최태호;김태영
    • 융합정보논문지
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    • 제11권2호
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    • pp.90-97
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    • 2021
  • 본 연구에서는 산업현장에서 미활용되는 열에너지를 회수하여 유용한 전기에너지로 변환하기 위한 Bi2Te3 계열 열전소자를 제작하고 에너지회수 성능 및 물성을 도출하였다. 성능시험을 위하여 카트리지 히터 가열 방식의 가열블록과 냉매가 흐르는 냉각블록으로 구성된 전용 실험장치를 구성하였으며, 가열블록과 냉각블록에는 3×3 배열의 열전대를 장착하여 소자 양 면 온도와 열전달율을 도출하였다. 최소 온도차 27K부터 최대 온도차 172.2K까지 총 9가지의 온도차에 대해 실험을 수행하여 V-I curve와 P-R curve를 도출하였고 성능에 주요한 영향을 미치는 제벡계수 등 변수 7가지에 대하여 온도차에 대한 함수로 결과를 제시하였다. 최대 발전양 7.5W와 변환효율 11.3%의 결과로부터 개발된 열전소자의 열에너지 회수 성능의 타당성을 검증하였다.

크로질화박막 스트레인 게이지의 특성 (Characteristics of Chromiun Nitride Thin-film Strain Guges)

  • 정귀상;김길중
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.134-138
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    • 2000
  • The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

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태양전지모듈의 기계적 하중시험에 따른 전기적 특성 분석 (The Analysis of Electrical Characteristics of PV Module according to Mechanical Load Test)

  • 김경수;강기환;유권종
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2008년도 춘계학술발표대회 논문집
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    • pp.247-251
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    • 2008
  • In this paper. we analyze electrical characteristics of photovoltaic module according to mechanical load test. Using the equipment for giving load on the surface of module, dark current-voltage is measured. By varying load from 0kg to 206kg, slight different I-V curve is detected. From this, reduced shunt resistance is roughly calculated and micro crack is assumed to be happened. system Through this experiment, periodic external force on PV module might give an negative effect. The detailed analysis is described in the following paper.

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EO Performances for Ion-beam Aligned TN-LCD on a DLC Thin Film Layer

  • Jo, Yong-Min;Hwang, Jeoung-Yeon;Seo, Dae-Shik;Lee, Sang-Keuk
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.118-120
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    • 2002
  • Electro-optical (EO) characteristics of the ion beam (IB) aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the diamond-like carbon (DLC) thin film surface were studied. An excellent voltage-transmittance (V-T) curve of the ion beam aligned IN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for I min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

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강유전박막의 피로현상을 고려한 MFSFET 소자의 특성 (Device Characteristics of MFSFET with the Fatigue of the Ferroelectric Thin Film)

  • 이국표;강성준;윤영섭
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.191-194
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    • 1999
  • Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

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임펄스전압에 의한 토양의 이온화 특성 (Ionization characteristics in soil Subjected to Impulse Voltage)

  • 김회구;박건훈;최종혁;조정현;이강수;이복희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1362-1363
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    • 2008
  • It has been known that the values of soil resistance drops when a high impulse current is injected into a grounding electrode. In this study, the electrical characteristics of medium grain size sand to different water contents are investigated. The results were discussed based on its voltage and current traces, impulse resistances and I-V curve.

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50[W]급 태양전지의 가상 구현을 위한 모듈의 직$\cdot$병렬 연결 특성 해석 및 제어 (Analysis and Control of Series$\cdot$Parallels Connection Characteristics for Virtual Implementation of 50[W] Solar Cell Module)

  • 한정만;류태규;고재석;최규하
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2002년도 전력전자학술대회 논문집
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    • pp.53-57
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    • 2002
  • The solar energy is purity and infinity. Solar power converter were used to convert the electrical energy from the solar arrays to a stable and reliable power source. So many countries research this solar energy system The photovoltaic system is construct many solar cell array. In this paper, new implementation solar system was showed buck converter that V-I curve produced. This system can be used to study the short-term and long-term performances of solar cell and efficiency. This system is a far more cost effective and reliable replacement for field and outdoor flight testing. Study of buck converter, analysis and control series or parallels connection characteristics of solar cell way.

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HWE 방법에 의한 $AgGaS_2$단결정 박막성장과 특성에 관한 연구 (A study on the growth and characteristics of $AgGaS_2$ single crystal thin film by hot wall epitaxy)

  • 홍광준;정준우
    • 한국결정성장학회지
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    • 제8권2호
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    • pp.211-220
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    • 1998
  • 수평 전기로에서 $AgGaS_2$ 다결정을 합성하여 HWE 방법으로 $AgGaS_2$ 단결정 박막을 성장하였다. $AgGaS_2$ 단결정 박막을 성잘할 때 증발원과 기판의 온도를 각각 $590^{\circ}C$, $440^{\circ}C$로 성장하였을 때 이중결정 X-선 요동곡선(double crystal X-ray diffraction rocking curve, DCRC)의 반폭치(FWHM)값이 124 arcsec로 가장 작아 최적 성장조건이었다. 상온에서 $AgGaS_2$ 단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 2.61cV였다. Band edge에 해당하는 광전도도 peak의 온도 의존성은 Varshni 관계식으로 설명되었으며, Vaeshni 관계식의 상수값은 Eg(0) = 2.7284eV, $\alpha$= 8.695$\times$10-4 eV/K, $\beta$= 332K 로 주어졌다. 광발광 봉우리는 20K에서 414.3nm(2.9926eV)와 414.1nm(2.7249eV)는 free exciton(Ex)의 upper polariton과 lower polariton인 {{{{{E}`_{x} ^{u} }}}}와 {{{{{E}`_{x} ^{L} }}}}, 423.6nm(2.9269eV)는 bound exciton emission에 의한 I로 관측되었다. 또한 455nm(2.7249eV)의 peak는 donor-acceptor pair(DAP)에 기인하는 광발광 봉우리로 관측되었다.

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치과용 아말감의 산화환원에 관한 전기화학적 연구 (AN ELECTROCHEMICAL STUDY ON THE OXIDATION' AND REDUCTION OF DENTAL AMALGAM)

  • 이인복;이명종
    • Restorative Dentistry and Endodontics
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    • 제18권2호
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    • pp.431-445
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    • 1993
  • The purpose of this study was to observe corrosion characteristics of six dental amalgams and was to analyse corrosion products electrochemically. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by using mechanical amalgamator, the triturated mass was inserted into the cylinderical metal mold ($12{\times}10mm$) and was condensed with 160kg/$cm^2$ by using the hydrolic press. The specimen was removed from the mold and was stored at room temperature for 1 week, and was polished with amalgam polishing kit. The anodic and cathodic polarization curve was obtained by using cyclic voltammetric method with 3-electrode potentiostat in saline for each amalgam and Ag, Sn, Cu plate specimen at $37{\pm}0.5^{\circ}C$. The potential sweep range was -1.7V~0. 4V(vs SCE) in working electrode and scan rate was 50mV/s and the exposed surface area of each specimen to the electrolytic solution was $0.79cm^2$. The results were as follows. 1. In anodic-cathodic polarization curve of amalgam specimens, two anodic current rising areas and two cathodic current peaks were obtained at the low Cu amalgam(CF, CS) specimen and three anodic current rising areas and three cathodic current peaks were obtained at the high Cu amalgam (TY, DS, HV) specimen. 2. As this compared with the anodic and cathodic current peak potentials of Sn, Cu and Ag specimen, the first cathodic current peak I c was caused by the reduction of divalent tin salt, second cathodic current peak IIIc results from the reduction of quadravalent tin salt, and third cathodic current peak me results from the reduction of copper salt. 3. As reverse potential sweeping was done repeatedly, anodic current was decreased slightly in all amalgam specimens.

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전자빔 증착법에 의한 CdSe/GaAs epilayer의 성장과 그 전기-광학적 특성 (Growth and electro-optical characteristics of CdSe/GaAs epilayers prepared by electron beam epitaxy)

  • 양동익;신영진;이춘호;최용대;유평렬
    • 한국결정성장학회지
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    • 제7권1호
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    • pp.70-75
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    • 1997
  • Electron beam 증착법을 보완하여 GaAs(100)기판위에 cubic(zinc blende) CdSe 에피충을 성장시켜 그의 특성을 조사하였다 .. CdSe 에피충의 격자 상수는 6.077 A였으며, 배향 성은 ECP 패번에 의하여 확인되고 결정성은 DCXR curve로 관찰하였다. 상온에서 측정된 H Hall data로는 에피충의 운반자 농도와 이통도는 각각 1018cm-3, 102cm2N' see 정도임을 알았 고 30 K에서 측정한 PC spectra peak는 cubic CdSe의 free exciton에 기인된 것으로 1.746 e eV에서 예리하게 나타냐고 있음을 보여주고 있다.

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