• Korean Journal of Materials Research
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• v.15 no.2
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Journal of Magnetics
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• v.14 no.1
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• pp.11-14
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• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.658-664
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• 2015

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

• Journal of Advanced Marine Engineering and Technology
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• v.36 no.8
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• pp.1117-1122
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• 2012

In order to study to apply the fuel cell, the study about the power system design and the load control is needed. However, to experiment the fuel cell need the auxiliary device and the complex control technology. For this reason the simulator is needed and such study is in progress actively. In this paper, the PEMFC (Polymer Electrolyte Membrane Fuel Cell) that is applied the vehicle, the small sized ship was simulated based on LabVIEW. The characteristic of fuel cell simulator was implemented based on a simulation data using the programmable power supply. The I-V characteristic according to various factors and the polarization curve of fuel cell were analysed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.45-49
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• 1983

The four-layered(metal/insulator/n epi-layer/p+) controlled inversion devices have been fabricated. The I-V curve showed two characteristic states―an On state and an OFF state which were separated by a negative resistance region. The switching voltage and the holding voltage were about 5.0V and 2.5V, respectively. The switching voltage of the device was decreased by photo illumination while the holding voltage remained unaffected.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.3
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• pp.569-575
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• 2020

Recently, research on renewable energy technologies has come into the spotlight due to rising concerns over the depletion of fossil fuels and greenhouse gas emissions. Demand for portable electronic and wearable devices is increasing, and electronic devices are becoming smaller. Energy harvesting is a technology for overcoming limitations such as battery size and usage time. In this paper, the V-I characteristic curve and internal resistance of thermal electric devices were analyzed, and MPPT control methods were compared. The Perturbation and Observation (P&O) control method is economically inefficient because two sensors are required to measure the voltage and current of a Thermoelectric Generator(TEG). Therefore, this paper proposes a new MPPT control method that tracks MPP using only one sensor for the regulation of the output voltage. The proposed MPPT control method uses the relationship between the output voltage of the load and the duty ratio. Control is done by periodically sampling the output voltage of the DC-DC converter to increase or decrease the duty ratio to find the optimal duty ratio and maintain the MPP. A DC-DC converter was designed using a cascaded boost-buck converter, which has a two-switch topology. The proposed MPPT control method was verified by simulations using PSIM, and the results show that a voltage, current, and power of V=4.2 V, I=2.5 A, and P=10.5 W were obtained at the MPP from the V-I characteristic curve of the TEG.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.427-432
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• 2018

High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective, a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.12
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• pp.1619-1625
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• 2018

Portable electronic devices secondary batteries can cause fire and explosion due to micro-current change in addition to the situation of short-circuit inrush current, safety can not be secured with a general operation limited current fuse. Therefore, in secondary battery, it is necessary for the protector to satisfy both the limit current type operation in the open-short-circuit inrush current and the current detection operation characteristic in the micro current change situation and for this operation, a fuse for the current detection type secondary battery protection circuit can be applied. The purpose of this study is to design a protection device that operates stably in the hazardous situation of small capacity secondary battery for portable electronic devices through the design of low melting fuse elements alloy of sensing type fuse and secures stability in abnormal current state. As a result of the experiment, I-T and V-T operation characteristics are satisfied in a the design of the alloy of the current sensing type self-contained low melting point fuse and the resistance of the heating resistor. It is confirmed that it can prevent accidents of short circuit over-current and micro current change of secondary battery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the KIPE Conference
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• 2002.11a
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• pp.59-61
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• 2002

This research investigates electron beam to specification energy to Module that was generalized and schematized difference of curved line after existing V-I efficiency characteristic curve and irradiation. And will analyze cause of Si crystal Solar cell's efficiency addition and subtraction by 80keV electron beam investigation.