• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.6
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• pp.7-11
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• 1976

A voltage-stable negative resistance circuit with operational amplifier is proposed, and circuit analysis is given all the input voltage range. The behavior of the v-i characteristics in the nogative resistance region is devided into two causes, and top points in the input v-i characteristics of the circuit is analyzed with them. Experimental results of the v-i characteristics of the proposed circuit has a good linearity in the negative region with negative resistance, -86$\Omega$~-833$\Omega$ for the input voltage, $\pm$ 1~$\pm$ 5 colts. The v-i characteristics of the circuit in all the input voltage range is discussed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.54-61
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• 2011

In this paper, a simple analytical model for deriving the I-V characteristics of a cylindrical surrounding gate SOI MOSFET with intrinsic silicon core is suggested. The Poisson equation in the intrinsic silicon core and the Laplace equation in the gate oxide layer are solved analytically. The surface potentials at both source and drain ends are obtained by means of the bisection method. From them, the surface potential distribution is used to describe the I-V characteristics in a closed-form. Simulation results seem to show the dependencies of the I-V characteristics on the various device parameters and applied bias voltages within a range of satisfactory accuracy.

• Proceedings of the KIEE Conference
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• 1997.07a
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• pp.230-233
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• 1997

In this study, design and analysis of 3-phase induction moter are as follows. - Motor characteristics analysis by equivalent circuit ${\cdot}$ Motor characteristics analysis according to variation of rotor slot-tip ${\cdot}$ Motor characteristics analysis according to variation of rotor slot-mouse ${\cdot}$ Motor characteristics analysis according to variation of rotor slot-opening

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.437-446
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• 2009

Solar, as an ideal renewable energy, it has inexhaustible, clean and safe characteristics. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.521-525
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• 2009

Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation. The results show that the DC current of the photovoltaic system are increased along with the increasing values of irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.931-937
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• ETRI Journal
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• v.27 no.3
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.3
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• pp.339-346
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• 2009

Photovoltaic (PV) energy is a renewable and harmless energy which offers many advantages. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current and DC power vary with the irradiation and module temperature, it is necessary to study the characteristics of photovoltaic I-V and P-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V and P-V according to the irradiation and the module temperature. The results show that the DC current and the DC power of the photovoltaic system are increased along with the increasing values of irradiation and module temperature.