• Title/Summary/Keyword: I-AFM

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Water desalination by membrane distillation using PVDF-HFP hollow fiber membranes

  • Garcia-Payo, M.C.;Essalhi, M.;Khayet, M.;Garcia-Fernandez, L.;Charfi, K.;Arafat, H.
    • Membrane and Water Treatment
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    • v.1 no.3
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    • pp.215-230
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    • 2010
  • Poly(vinylidene fluoride-co-hexafluoropropylene), PVDF-HFP, hollow fiber membranes were prepared by the dry/wet spinning technique using different polyethylene glycol (PEG) concentrations as non-solvent additive in the dope solution. Two different PEG concentrations (3 and 5 wt.%). The morphology and structural characteristics of the hollow fiber membranes were studied by means of optical microscopy, scanning electron microscopy, atomic force microscopy (AFM) and void volume fraction. The experimental permeate flux and the salt (NaCl) rejection factor were determined using direct contact membrane distillation (DCMD) process. An increase of the PEG content in the spinning solution resulted in a faster coagulation of the PVDF-HFP copolymer and a transition of the cross-section internal layer structure from a sponge-type structure to a finger-type structure. Pore size, nodule size and roughness parameters of both the internal and external hollow fiber surfaces were determined by AFM. It was observed that both the pore size and roughness of the internal surface of the hollow fibers enhanced with increasing the PEG concentration, whereas no change was observed at the outer surface. The void volume fraction increased with the increase of the PEG content in the spinning solution resulting in a higher DCMD flux and a smaller salt rejection factor.

The Electrical Characterization of Magnetic Tunneling Junction Cells Using Conductive Atomic Force Microscopy with an External Magnetic Field Generator

  • Heo, Jin-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.271-274
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    • 2010
  • We examined the tunneling current behaviors of magnetic tunneling junction (MTJ) cells utilizing conductive atomic force microscopy (AFM) interfaced with an external magnetic field generator. By introducing current through coils, a magnetic field was generated and then controlled by a current feedback circuit. This enabled the characterization of the tunneling current under various magnetic fields. The current-voltage (I-V) property was measured using a contact mode AFM with a metal coated conducting cantilever at a specific magnetic field intensity. The obtained magnetoresistance (MR) ratios of the MTJ cells were about 21% with no variation seen from the different sized MTJ cells; the value of resistance $\times$ area (RA) were 8.5 K-12.5 K $({\Omega}{\mu}m^2)$. Since scanning probe microscopy (SPM) performs an I-V behavior analysis of ultra small size without an extra electrode, we believe that this novel characterization method utilizing an SPM will give a great benefit in characterizing MTJ cells. This novel method gives us the possibility to measure the electrical properties of ultra small MTJ cells, namely below $0.1\;{\mu}m\;{\times}\;0.1\;{\mu}m$.

Evaluation of Electrical Properties of IZO Thin-Film with UV Post-Annealing Treatment Time (IZO 박막 트랜지스터의 UV를 이용한 후열처리 조사 시간에 따른 전기적 특성 평가)

  • Lee, Jae-Yun;Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.93-98
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    • 2020
  • We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

Study on Morphology and Current-Voltage (I-V) property of Arachidic acid LB film (Arachidic acid LB 막의 표면 이미지와 I-V 특성 연구)

  • Ryu, Kil-Yong;Lee, Nam-Suk;Park, Sang-Hun;Park, Jae-Chul;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.05a
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    • pp.61-62
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    • 2006
  • 본 연구에서는 대표적인 양친매성분자인 Arachidic acid를 이용하여 박막을 제작하였으며, 층수 변화에 따른 표면이미지와 전압-전류 특성을 측정하였다. Arachidic acid 는 포화지방산으로 ($CH_3(CH_2)_{18}$ COOH)의 구조를 가지며, 크기가 $27.5{\AA}$으로 $CH_3(CH_2)_{18}$의 소수기와 COOH의 친수기로 구성되어 있어, Langmuir-Blodgett (LB) Trough을 사용하여 박막제작과 분자제어가 쉽다. Chloroform을 용매로 하여 2 mmol/l의 농도를 조성하여 ${\pi}$-A 등온선을 통해 기체 상태, 액체 상태, 고체 상태를 관찰하였다. LB 막의 제작 및 평가에서 막의 안정성은 ${\pi}$-A 곡선, AFM(Atomic force microscopy) 등을 통하여 확인하였다. 또한 LB 막을 Metal/유기물 LB막/Metal 구조의 소자로 제작하여 전압-전류 특성을 측정하였다.

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Characteristics of Pentacene Organic Thin-Film Transistors with Different Polymer Gate Insulators (Polymer Gate Insulators에 따른 Pentacene Organic Thin-Film Transistors의 특성 분석)

  • Kim, Jung-Min;Her, Hyun-Jung;Yoon, J.H.;Kim, Jae-Wan;Choi, Y.S.;Kang, C.J.;Jeon, D.;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1434-1435
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    • 2006
  • 본 연구에서는 polymer gate insulators에 따른 pentacene 유기 박막 트랜지스터 (Organic Thin-Film Transistors)의 전기적 특성을 atom force microscope (AFM), x-ray diffraction (XRD) 그리고 I-V 측정을 이용하여 분석하였다. Pentacene 박막 트랜지스터의 전기적 특성은 pentacene의 증착 조건뿐만 아니라 polymer gate insulator에 따라 크게 영향을 받는다. 따라서 다양한 polymer 기판 위에 온도, 두께 그리고 증착 속도에 따라 pentacene을 증착 하였다. 그리고 증착된 pentacne을 AFM, XRD를 이용하여 pentacene의 구조, 결정화 그리고 grain 크기 등을 분석하였다. 또한 inverted stagger며 구조의 pentacene 박막 트랜지스터 소자를 제작하고 I-V 측정하여 그 결과를 분석하였다.

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Study on Morphology and Current-Voltage (I-V) property of Arachidic acid Thin film by LB method (LB법을 이용한 Arachidic acid 박막의 표면이미지와 I-V특성 연구)

  • Ryu, Kil-Yong;Lee, Nam-Suk;Park, Sang-Hun;Park, Jae-Chul;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.394-395
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    • 2006
  • 본 연구에서는 Arachidic acid Langmuir-Blodgett (LB) 막의 표면이미지와 전압-전류 특성을 측정하였다. Arachidic acid는 포화지방산으로 ($CH3(CH_2)_{18}$ COOH)의 구조를 가지며, 크기가 $27.5\;{\AA}$으로 $CH_3(CH_2)_{18}$의 소수기와 COOH의 친수기로 구성되어 있어, LB Trough를 사용하여 박막제작과 분자제어가 쉽다. Chloroform을 용매로 하여 2mmol/l의 농도를 조성하여 ${\pi}$-A 등온선을 통해 기체 상태, 액체 상태, 고체 상태를 관찰하였다. LB막의 제작 및 평가에서 막의 안정성은 ${\pi}$-A곡선, AFM (Atomic force microscopy) 등을 통하여 확인 하였다. 또한 LB 막을 Metal/LB막/Metal 구조의 소자로 제작하여 전압-전류 특성을 측정하였다.

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Local Current Distribution in a Ferromagnetic Tunnel Junction Fabricated Using Microwave Excited Plasma Method (마이크로파 여기 프라즈마법으로 제조한 강자성 터널링 접합의 국소전도특성)

  • Yoon, Tae-Sick;Kim, Cheol-Gi;Kim, Chong-Oh;Masakiyo Tsunoda;Migaku Takahashi;Ying Li
    • Journal of the Korean Magnetics Society
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    • v.13 no.2
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    • pp.47-52
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    • 2003
  • Ferromagnetic tunnel junctions were fabricated by dc magnetron sputtering and plasma oxidation process. The local transport properties of the ferromagnetic tunnel junctions were studied using contact-mode Atomic Force Microscopy (AFM) and the local current-voltage analysis. Tunnel junctions with the structure of sub./Ta/Cu/Ta/NiFe/Cu/Mn$\_$75/Ir$\_$25//Co$\_$70/Fe$\_$30//Al-oxide were prepared on thermally oxidized Si wafers. Al-oxide layers were formed with microwave excited plasma using radial line slot antenna (RLSA) for 5 and 7 sec. Kr gas was used as the inert gas mixed with $O_2$ gas for the plasma oxidization. No correlation between topography and current image was observed while they were measured simultaneously. The local current distribution was well identified with the distribution of local barrier height. Assuming the gaussian distribution of the local barrier height, the ferromagnetic tunnel junction with longer oxidation time was well fitted with the experimental results. As contrast, in the case of the shorter time oxidation junction, the current mainly flow through the low barrier height area for its insufficient oxygen. Such leakage current might result in the decrease of tunnel magnetoresistance (TMR) ratio.

Comparison of Electrical Properties and AFM Images of DSSCs with Various Sintering Temperature of TiO2 Electrodes (TiO2 전극의 소결 온도에 따른 DSSCs의 전기적 특성 및 AFM 형상 비교)

  • Kim, Hyun-Ju;Lee, Dong-Yun;Lee, Won-Jae;Koo, Bo-Kun;Song, Jae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.6
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    • pp.571-575
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    • 2005
  • In order to improve the efficiency of dye-sensitized solar cell (DSSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature$(350\;to\;550^{\circ}C)$. $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSSCs were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). Below sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively lower due to lower open circuit voltage. Oppositely, above sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively higher due to higher open circuit voltage. In both cases, lower fill factor (FF) was observed. However, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSSCs were mutually complementary, enhancing highest fill factor and efficiency. Such results can be explained in comparison of surface morphology with schematic diagram of energy states on the $TiO_2$ electrode surface. Consequently, it was considered that optimum sintering temperature of a-terpinol included $TiO_2$ paste is at $500^{\circ}C$.