• Korean Journal of Food Science and Technology
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• v.29 no.2
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• pp.266-272
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• 1997

In order to investigate the compression and decompression properties of cucumber, radish, garlic, ginger and potato, edible parts of samples were prepared to size of ${\Phi}\;5\;mm{\times}H\;5\;mm$, and force deformation relationship during application and removal of force were observed. Compositions of sample and cell characteristics were measured, and correlations between them were investigated. Deformation rate was large in initial stage of compression and decreased afterward, but the reverse trends were observed in the decompression. The time and deformation to 9 N were large of 5.30 sec and 1.344 mm in potato, and small of 4.62 sec and 0.896 mm in garlic, respectively. Force(y)-deformation(x) curve between compression and decompression were clearly showed hysteresis loop and relationship of x and y were as follows: y=esp (a+b log(x)). The maximum work was $3.888{\sim}5.099{\times}10^{-3}\;J$ for potato in compression and $2.09{\times}10^{-3}\;J$ for garlic in decompression. Irrecoverable work were large as $77{\sim}96%$ in cucumber, radish and potato, and small as $36{\sim}42%$ in garlic. Compression deformation were large as $1.016{\sim}1.344\;mm$ in potato, and small as $0.656{\sim}0.896\;mm$ in garlic. Degree of elasticity were large as $0.756{\sim}0.777$ in garlic, and small as $0.301{\sim}0.465$ in radish and potato. Compression and decompression characteristic values were showed high correlation with moisture, viscosity of juice, ceil size, density and regularity.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.2
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• pp.137-145
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• 2008

An experimental study was performed in order to investigate the influence of Reynolds number on the drag coefficient variations of an oscillating airfoil. A NACA 0012 airfoil was sinusoidally pitched at the quarter chord point with an oscillating amplitude of ${\pm}6^{\circ}$. The free-stream velocities were 1.98, 2.83 and 4.03 m/s and the corresponding chord Reynolds numbers were $2.3{\times}10^4$, $3.3{\times}10^4$ and $4.8{\times}10^4$, respectively. The drag coefficient was calculated from the ensemble average velocity measured by an X-type hot-wire probe(X-type, 55R51) in the near-wakes region. In the case of Re=$2.3{\times}10^4$, variation of drag coefficient shows a negative damping (counter-clockwise variation), which implies an unstable state which could be excited by aerodynamic force, whereas the drag coefficient represents the positive damping (clockwise variation) as the Reynolds number increases from Re=$3.3{\times}10^4$ to $4.8{\times}10^4$. Hence, the drag coefficient variations show significant differences between Re=$2.3{\times}10^4$ and $4.8{\times}10^4$이다.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.202-209
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• 2005

Phase evolution, microstructure and the electrical properties such as $k_p$ and $Q_m$ of $Pb(Mg_{1/3}Nb_{2/3})O_3[PMN]-Pb(Mn_{1/3}Nb_{2/3})O3[PM'N]-PbZrO_3[PZ]-PbTiO_3[PT]$ quaternary system were investigated within the compositional ranges $0{\leq}y{\leq}0.125$, y+z=0.125, and $0.39{\leq}x{\leq}0.54$ of the formula $Pb_{0.97}Sr_{0.03}[Mg_{1/3}Nb_{2/3})_y\;(Mn_{1/3}Nb_{2/3})_z\;(Zr_{x}Ti_{1-x})_{1-(y+z)}]O_3$. In the case of increasing Mn/(Mg+Mn) ratio for a fixed Zr/Ti ratio of 47.5/52.5, phase relation remained unchanged but the grain size drastically decreased, and the electrical properties changed as following: both $k_P$ and $Q_m$ reached the peak values at $Mn/(Mg+Mn)\cong0.3l7$ and gradually decreased; $\varepsilon33^T$ showed a monotonic decrease; P-E hysteresis loop gradually changed to asymmetrical one, and $E_i$ increased in correspondence. With increasing Zr/Ti ratio for a fixed Mn/(Mg+Mn) ratio of 0.317, on the contrary, the cell parameter $(\alpha^2c)^{1/3}$ gradually increased, and tetragonal-rhombohedral morphotropic phase boundary appeared in the range of $51/49{\leq}Zr/Ti{\leq}54/46$. the meantime, the grain size substantially increased, and the electrical properties changed as following: $k_P$ and $\varepsilon33^T$ reached peak values at Zr/Ti=51/49 and 48/52, respectively, and then gradually decreased; change of $Q_m$ was adverse to $k_P$; both $E_C\;and\;E_i$ considerably decreased while $P_S$ moderately increased. For the system 0.125(PMN+PM'N)-0.875PZT studied, the composition Mn/(Mg+Mn)=0.3l7 and Zr/Ti=51/49 revealed some promising electrical properties for piezoelectric transformer application such as $k_P=0.58,\;Q_m\cong1000$, and $\varepsilon^T_{33}=970$, as well as dense and fine-grained microstructure.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.200-204
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• 2013

In this study, we have fabricated magnetoresistive sensors of $50{\mu}m{\times}50{\mu}m$ cross type by trilayer structure of antiferromagnetic/nonmagnetic/ferromagnetic. The magnetic signal and magnetic domain of this sensor is measured. The sensor hysteresis loop is not in symmetrical at 0 Oe. This is may be due to the exchange coupling between ferromagnetic layer and anti ferromagnetic layer. This exchange bias value is 20 Oe. The sensor signal is measured at between the applied magnetic field and current. The sensor signal is measured between the applied magnetic field and current at $20^{\circ}$ and $90^{\circ}$ angles. The sensitivity of sensor signals is $20{\mu}V/Oe$ and $7{\mu}V/Oe$ at $20^{\circ}$ and $90^{\circ}$ angles, respectively. In addition, this sensor is also applied for the detection of magnetic bacteria at $20^{\circ}$ angle. From these results, we calculate the stray field of single bacteria is to be $5{\times}10^{-5}$Oe.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.91-95
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• 1995

Polycrystalline bismuth- and aluminum- substituted dysporsium and yttrium iron garnet (Bi2R3-xAlyFe5-yO12, R=Dy or Y, $0\leqx\leq3, \; 0\leqy\leq3$) films have been prepared by pyrolysis. The crystallization temperatures, the solubility limit of bismuth ions into the garnet phase, and magnetic and magneto-optic properties of the films have been investigated as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained unchanged at x>1.5, whereas, showed no changes as aluminum concentration (y) increased up to y=1.0 and then gradually increased at y>1.0. The solubility limit of bismuth ions was x=1.8 when y=0 but increased to x=2.3 when y=1.0. It was demonstrated that the magnetic and magneto-optic properties of the dysprosium iron garnet films could be tailored by bismuth and aluminum substitution suitable for magneto-optic recording as follows. The saturation magnetization and coercivity data obtained for the films indicated that the film composition at which the magnetic compensation temperature became room temperature was y=1.2 when x=1.0. Near this composition the coercivity and the squareness of the magnetic hysteresis loop of the films were several kOe and unit, respectively. The Curie temperatures of the films increased with the increase of x but decreaed with the increase of y, and was 150-$250^{\circ}C$ when x=1.0 and y=0.6-1.4. The Faraday rotation at 633 nm of the films increased as x increased but decreased as y increased, and was 1 deg/$\mu\textrm{m}$ when x=1.0 and y=1.0. Based on the data obtained, the appropriate film composition for magneto-optic recording was estimated as near x=1.0 and y=1.0 or $BiDy_2AlFe_4O_{12}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.6
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• pp.585-592
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• 2011

The enhancement of the cold-start capability of polymer electrolyte fuel cells is of great importance in terms of the durability and reliability of fuel-cell vehicles. In this study, vanadium oxide films deposited onto the flat surface of metallic bipolar plates were synthesized to investigate the feasibility of their use as an efficient self-heating source to expedite the temperature rise during startup at subzero temperatures. Samples were prepared through the dip-coating technique using the hydrolytic sol-gel route, and the chemical compositions and microstructures of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and field-emission scanning electron microscopy. In addition, the electrical resistance hysteresis loop of the films was measured over a temperature range from -20 to $80^{\circ}C$ using a four-terminal technique. Experimentally, it was found that the thermal energy (Joule heating) resulting from self-heating of the films was sufficient to provide the substantial amount of energy required for thawing at subzero temperatures.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.10
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• pp.1029-1037
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• 2015

Recently, the importance of rotordynamic stability has been increased because of the tendency to employ ultra-high speeds in rotating machinery. In particular, the dynamic characteristics of gas bearings for high-speed rotating machinery need to be identified at various excitation frequencies to predict the rotor's behavior. In this study, we perform dynamic loading tests for gas-foil bearings (GFBs) to determine the bump foil structure and an air-film combined bump-foil structure for varying excitation frequencies. We calculate the dynamic characteristics from the measured force and displacement data. The air film is generated by a pressurized air supply. Based on the results, the stiffness coefficients of the bump structure and the air-film combined bump structure increased, while the damping coefficients decreased at increasing excitation frequencies. Further, the stiffness and damping coefficients of the air-film combined structure show lower values than those of the bump structure. Consequently, we identify the frequency-dependent dynamic characteristics of the bump structure and the effect of gas film on the dynamic characteristics of GFBs. Furthermore, to reveal the effectiveness of the proposed method, we perform experiments and discuss two methods of extracting the dynamic characteristics from the measured data.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.167-171
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• 2005

Detailed aspects of the charge disproportionation (CD) transition for a polycrystalline $La_{1/3}Sr_{2/3}FeO_{2.96}$ were studied with the X-ray diffraction, $M\ddot{o}ssbauer$ spectroscopy, and SQUID magnetometer. The crystal structure was found to be rhombohedral with a space group R/3c. The lattice parameters were $a_R=5.4874\;\AA,\;and\;a_R=60.07^{\circ}$, respectively. $M\ddot{o}ssbauer$ spectra were taken within a wide range of temperature from 4.2 K up to room temperature. In the low temperature region, the spectra were comprised of two superimposed sextets which originated from $Fe^{3+}\;and\;Fe^{5+}$, respectively. This was the antiferromagnetic mixed valence state produced by the charges disproportionated into two different species. In the high temperature region, however, only a singlet from $Fe^{3.6+}$ was observed, indicating that it was a paramagnetic averaged valence state. The CD transition occurred in the temperature range from 175 K to 200 K, in which the two phases coexisted. The origin for the CD transition was explained by the thermally generated fast hopping of electrons. Hysteresis loop showed that there existed a strong antiferromagnetic interaction among magnetic ions. As the temperature increased thru the CD transition temperature, it was very likely that the interaction between $Fe^{3+}\;and\;Fe^{5+}$ was replaced by a more stronger one.