• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.203-207
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• 2013

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

• Journal of the Korean Professional Engineers Association
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• v.14 no.4
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• pp.15-25
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• 1981

Electrical behaviors of the divalent silver oxide-zinc cell were analyzed for imporving capacity and keeping electrodes from passivation or sharp increases of cell internal resistance in the course of discharge. One of primary factors in relation to lowering performance can be depicted by cell internal resistance increase being created by various routes, first by insufficiency and/or the carbonation of the electrolyte, secondly by barrier blockage, thirdly by electrode passivation which are due to improper material use of wrong processing, and by gassing as fourth cause. The carbonation causes electrobyte to have impedance up as well as poor amalgamation, resulting in vigorous corrosion reaction of copper plated inner top, evolving hydrogen gas. Electrical characteristics of the cell was reviewed to elucidate relationships between the discharge capacity and the cell internal resistance.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.2
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• pp.29-33
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• 2002

Various nanometer-scale structures are fabricated on hydrogen-passivated p-type Si(100) surface by scanning probe microscopy(SPM). The hydrogen-passivation is performed by dipping the samples in diluted 10% HF solution for one min.. Pt alloy wires are used for tips and the tips are made by cutting the wires at 45$^{\circ}$ slanted. Various line features are fabricated in various bias voltage. The optimal structure is the line of about 30 nm width on 1.7V bias voltage and 1 nA tunneling current.  

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.255-262
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• 2020

Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiO_x layer- interfacial layer-crystalline system that is similar to the Si-SiO₂ system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiO_x layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.

• Journal of Powder Materials
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• v.13 no.5 s.58
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• pp.327-335
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• 2006

In the development of new hydrogen absorbing materials for a next generation of metal hydride electrodes for rechargeable batteries, metastable Mg-Ni-based compounds find currently special attention. Amor phous-nanocrystalline $Mg_{63}Ni_{30}Y_7$ and $Mg_{50}Ni_{30}Y_{20}$ alloys were produced by mechanical alloying and melt-spinning and characterized by means of XRD, TEM and DSC. On basis of mechanically alloyed Mg-Ni-Y powders, complex hydride electrodes were fabricated and their electrochemical behaviour in 6M KOH (pH=14,8) was investigated. The electrodes made from $Mg_{63}Ni_{30}Y_7$ powders, which were prepared under use of a SPEX shaker mill, with a major fraction of nanocrystalline phase reveal a higher electrochemical activity far hydrogen reduction and a higher maximum discharge capacity (247 mAh/g) than the electrodes from alloy powder with predominantly amorphous microstructure (216 mAh/g) obtained when using a Retsch planetary ball mill at low temperatures. Those discharge capacities are higher that those fur nanocrystalline $Mg_2Ni$ electrodes. However, the cyclic stability of those alloy powder electrodes was low. Therefore, fundamental stability studies were performed on $Mg_{63}Ni_{30}Y_7$ and $Mg_{50}Ni_{30}Y_{20}$ ribbon samples in the as-quenched state and after cathodic hydrogen charging by means of anodic and cathodic polarisation measurements. Gradual oxidation and dissolution of nickel governs the anodic behaviour before a passive state is attained. A stabilizing effect of higher fractions of yttrium in the alloy on the passivation was detected. During the cathodic hydrogen charging process the alloys exhibit a change in the surface state chemistry, i.e. an enrichment of nickel-species, causing preferential oxidation and dissolution during subsequent anodization. The effect of chemical pre-treatments in 1% HF and in $10\;mg/l\;YCl_3/1%\;H_2O_2$ solution on the surface degradation processes was investigated. A HF treatment can improve their anodic passivation behavior by inhibiting a preferential nickel oxidation-dissolution at low polarisation, whereas a $YCl_3/H_2O_2$ treatment has the opposite effect. Both pre-treatment methods lead to an enhancement of cathodically induced surface degradation processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.211-211
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• 2012

Using spin-polarized density-functional theory calculations, we find that the existence of either Peierls instability or antiferromagnetic spin ordering is sensitive to hydrogen passivation near the step. As hydrogens are covered on the terrace, the dangling bond electrons are localized at the step, leading to step-induced states. We investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated vicinal Si(001) surface. We find antiferromagnetic (AF) ordering to be energetically much more favorable than charge ordering. The energy preference of AF ordering shrinks in an oscillatory way as the wire length increases. This oscillatory behavior can be interpreted in terms of quantum size effects as the DB electrons fill discrete quantum levels.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.482-496
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• 1993

Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1023-1027
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• 2009

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2/(Ar+H_2)$ flow ratios on polyethersulfon (PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7\;{\times}\;10^5\;{\Omega}/square$, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.