• Title/Summary/Keyword: Hydrogen doping

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The Effect of Y at Ni-YSZ Catalysts for the Application to the Process of Methane Chemical-Looping Reforming (메탄을 이용한 매체 순환 개질 시스템을 위한 Ni-YSZ 촉매에서의 Y에 따른 촉매 반응 특성 연구)

  • KIM, HEESEON;JEON, YUKWON;HWANG, JUSOON;SONG, SOONHO;SHUL, YONG-GUN
    • Transactions of the Korean hydrogen and new energy society
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    • v.26 no.6
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    • pp.516-523
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    • 2015
  • Nickel based oxygen transfer materials supported on two different YSZs were tested to evaluate their performance in methane chemical-looping reforming. The oxygen transfer materials of YSZs were selected with different amount of the doped yittrium in the $ZrO_2$ structure. The yittrium of 8 mol% stabilized the zirconia oxide to a cubic structure compare to the 3 mol% doping, which is known to be a good for oxygen transfer. Various nickel amounts (16wt.%, 32wt.%, 48wt.%) were loaded on the selected supports. The nickel amount of 32% shows the optimized catalyst structure with good physical properties and reducibility from the XRD, BET and H2-TPR analysis, especially when the support of 8YSZ was used. From the methane chemical-looping reforming, hydrogen was produced by methane decomposition catalyzed by Ni on both YSZs. Comparing two YSZ supports of 3YSZ and 8YSZ during the cycling tests, the catalyst with 8YSZ (Ni 32%) exhibits not only the higher methane conversion and hydrogen production but also a faster reaction rate reaching to the stable point.

A Study on Sintering Behavior and Conductivity for NiO-doped BaZr0.85Y0.15O3-δ (NiO가 도핑된 BaZr0.85Y0.15O3-δ의 소결거동 및 전도도에 관한 연구)

  • Park, Young-Soo;Kim, Jin-Ho;Kim, Hae-Kyoung;Hwang, Kwang-Tak
    • Transactions of the Korean hydrogen and new energy society
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    • v.23 no.6
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    • pp.670-677
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    • 2012
  • Perovskite-type oxides such as doped barium zirconate ($BaZrO_3$) show high proton conductivity and chemical stability when they are exposed to hydrogen and water vapour containing atmospheres, thus it can be applicable to the hydrogen separation and the fuel cell electrolyte membranes. However the high temperature ($1700-1800^{\circ}C$) and long sintering times (24h) are generally required to prepare the fully densified $BaZrO_3$ pellets. These sintering conditions lead to the limitation of the grain size growth and the degradation of conductivity due to the acceleration of BaO evaporation at $1200^{\circ}C$. Here we demonstrate NiO-doped $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ with lower calcination and sintering temperature, less experimental procedure and lower process cost than the conventional mixing method. The stoichiometry of $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ was optimized by the control of excess amount of Ba (5mol%) to minimized BaO evaporation. We found that the crystal size of NiO-doped $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ was increased with increase of calcination temperature from XRD analysis. NiO-doped $BaZr_{0.85}Y_{0.15}O_{3-{\delta}}$ powder was calcined at $1000^{\circ}C$ for 12h when its showed the highest conductivity of $3.3{\times}10^{-2}s/cm$.

Fabrication of Fe-doped LaGaO3 Perovskite Mixed Conductor and Improvement of Oxygen Permeability by Screen Printing Coating (Fe가 Doping 된 LaGaO3 폐롭스카이트 혼합 전도체의 제조 및 코팅에 따른 산소투과 성능 향상)

  • Lim, Kyung Tae;Cho, Tong Lae;Lee, Kee Sung;Woo, Sang Kuk;Park, Kee Bae;Kim, Jong Won
    • Transactions of the Korean hydrogen and new energy society
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    • v.12 no.2
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    • pp.137-146
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    • 2001
  • 고상 반응법을 이용하여 $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-{\delta}}$ 분말을 합성하고 혼합전도체 분리막을 소결하여 제조하였다. 제조된 분리막은 $LaGaO_3$에 일치하는 폐롭스카이트 결정구조를 나타내었으며 95% 이상의 높은 상대밀도를 나타내었다. 스크린 프린팅 방법으로 $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ 후막을 disk의 양 표면에 코팅하였으며 코팅 막은 비교적 치밀한 미세구조를 나타내었다. 코팅되지 않은 분리막과 코팅된 분리막의 산소투과 성능을 비교 실험한 결과 $850^{\circ}C$에서 동일한 두께의 코팅된 분리막의 정상상태 산소 투과 유속이 $0.7{m{\ell}}/min.cm^2$ 정도로 코팅되지 않은 분리막에 비해 약 2~3배로 높게 나타났다.

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Study of Hydrogen Evolution Reaction by Molybdenum Oxide Doped TiO2 Nanotubes (몰리브덴 산화물이 도핑된 티타늄 나노튜브전극의 수소 발생 반응 연구)

  • Oh, Kiseok;Yoo, Hyeonseok;Lee, Gibaek;Choi, Jinsub
    • Journal of the Korean institute of surface engineering
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    • v.49 no.6
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    • pp.521-529
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    • 2016
  • In this study, titanium nanotubes, prepared by anodization method, showing high surface and strong chemical stability in acidic and basic media, have been employed for the application to the electrodes for water splitting in KOH solution. Due to its high polarization resistance of $TiO_2$ itself, proper catalysts are essentially required to reduce overpotentials for water oxidation and reduction. Most of academic literature showed noble metal catalysts for foreign dopants in $TiO_2$ electrodes. From commercialization point of view, screening of low-cost catalyst is important. Herein, we propose molybdenum oxide as low-cost catalysts among various catalysts tested in the experiments, which exhibits the highest performance for hydrogen evolution reaction in highly alkaline solution. We showed that molybdenum oxide doped electrode can be operated in extreme acidic and basic conditions as well.

Photoelectrochemical Water Oxidation and $CO_2$ Conversion for Artificial Photosynthesis

  • Park, Hyunwoong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.70-70
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    • 2013
  • As the costs of carbon-footprinetd fuels grow continuously and simultaneously atmospheric carbon dioxide concentration increases, solar fuels are receiving growing attention as alternative clean energy carriers. These fuels include molecular hydrogen and hydrogen peroxide produced from water, and hydrocarbons converted from carbon dioxide. For high efficiency solar fuel production, not only light absorbers (oxide semiconductors, Si, inorganic complexes, etc) should absorb most sunlight, but also charge separation and interfacial charge transfers need to occur efficiently. With this in mind, this talk will introduce the fundamentals of solar fuel production and artificial photosynthesis, and then discuss in detail on photoelectrochemical (PEC) water splitting and CO2 conversion. This talk largely divides into two section: PEC water oxidation and PEC CO2 reduction. The former is very important for proton-coupled electron transfer to CO2. For this oxidation, a variety of oxide semiconductors have been tested including TiO2, ZnO, WO3, BiVO4, and Fe2O3. Although they are essentially capable of oxidizing water into molecular oxygen, the efficiency is very low primarily because of high overpotentials and slow kinetics. This challenge has been overcome by coupling with oxygen evolving catalysts (OECs) and/or doping donor elements. In the latter, surface-modified p-Si electrodes are fabricated to absorb visible light and catalyze the CO2 reduction. For modification, metal nanoparticles are electrodeposited on the p-Si and their PEC performance is compared.

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Development of Activated Graphite Felt Electrode Using Ozone and Ammonia Consecutive Post Treatments for Vanadium Redox Flow Batteries (오존, 암모니아 순차적 처리를 통한 바나듐 레독스 흐름 전지용 활성화 카본 펠트 전극 개발)

  • CHOI, HANSOL;KIM, HANSUNG
    • Transactions of the Korean hydrogen and new energy society
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    • v.32 no.4
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    • pp.256-262
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    • 2021
  • A carbon felt electrode was prepared using ozone and ammonia sequential treatment and applied as an electrode for a vanadium redox flow battery (VRFB). The physical and electrochemical analyses demonstrate that the oxygen groups facilitate nitrogen doping in the carbon felt. Carbon felt (J5O3+NH3), which was subjected to ammonia heat treatment after ozone treatment, showed higher oxygen and nitrogen contents than carbon felt (J5NH3+O3), which was subjected to ammonia heat treatment first and then ozone treatment. From the charging/discharging of VRFB, the J5O3+NH3 carbon felt electrode showed 14.4 Ah/L discharge capacity at a current density of 150 mA /cm2, which was 15% and 33% higher than that of J5NH3+O3 and non-activated carbon felt (J5), respectively. These results show that ozone and ammonia sequential treatment is an effective carbon felt activation method to increase the performance of the vanadium redox flow battery.

Highly Doped Nano-crystal Embedded Polymorphous Silicon Thin Film Deposited by Using Neutral Beam Assisted CVD at Room Temperature

  • Jang, Jin-Nyeong;Lee, Dong-Hyeok;So, Hyeon-Uk;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.154-155
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    • 2012
  • The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (< $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

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Novel Activation by Electrochemical Potentiostatic Method

  • Lee, Hak-Hyeong;Lee, Jun-Gi;Jeong, Dong-Ryeol;Gwon, Gwang-U;Kim, Ik-Hyeon
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.29.1-29.1
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    • 2009
  • Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

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Light-Induced Degradation of Hydrogenated Amorphous Silicon (광조사에 따른 비정질 실리콘의 열화)

  • 박진석;한민구;이정한
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.5
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    • pp.501-508
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    • 1988
  • This paper presents the light-induced effects on the elelctrical and optical properties of undoped and doped hydrogenated amorphous silicon films. The changes in the conductivities and the activation energies of various types of a-Si:H films due to the prolonged exposure to light have been characterized as a function of deposition conditions and illumination periods. The dark conductivity changes may be quenched for heavier doped a-Si:H films. We have also analyzed the variations of micro-structure of a-Si:H film such as silicon-hydrogen bondings in the rocking and stretching modes utilizing infrared spectroscopy. From the experimental results, it is elucidated that doping effects must be crucial to the degradations of the fundamental properties of a-Si:H due to light-induced effects.

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Feasibility Study of IAQ Enhancement by Visible Light Photocatalyst (가시광 응답형 광촉매 제조와 이를 활용한 실내공기환경 개선 적용 타당성 조사)

  • Lee, Tai-Kyu;Yoon, Woo-Sug;Kim, Dong-Hyung;Hwang, Chul-Soon;Lim, Ji-Hun;Yoon, Jung-Ho;Kim, Young-mi
    • KIEAE Journal
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    • v.4 no.2
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    • pp.37-40
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    • 2004
  • New visible photocatalyst(Nanovis$^{(R)}$) has been synthesized to overcome the barrier of limitation of UV light utilization of current $TiO_2$ photocatalyst. It was found that red shift of absorption spectrum to 550nm was achieved. Its physical properties were characterized by XRD, BET and TEM. It is also observed that Nanovis$^{(R)}$ has a photocatalytic activity for photodegradation of Trichloroethylene under visible light irradiation. V,VII group doped into substitutional sites of $TiO_2$ has proven to be indispensable for band-gap narrowing and photocatalytic activity. These test results lead us to conclude that Nanovis$^{(R)}$ can be used for IAQ improvemen and for photocatalytic water splitting to hydrogen.