• 한국세라믹학회지
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• 제38권10호
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• pp.867-870
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• 2001

지지촉매로 Ni-graphite를 사용하고 ${C_2}{H_2}$를 이용한 열화학기상증착법에 의하여 탄소나노소재를 합성하였다. 합성된 시편은 SEM, TEM, 라만 분광법으로 분석하였으며, 수소저장특성은 전기화학적인 방법에 의하여 평가하였다. 탄소나노소재 합성시 메카노케미컬 처리과정을 거친 시편이 거치지 않은 시편에 비하여 탄소나노튜브의 순도가 우수하였다. 한편, 탄소나노소재를 정제함에 따라 수소저장특성이 크게 향상되었다.

• Current Photovoltaic Research
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• 제1권1호
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• 한국표면공학회지
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• 제31권3호
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• pp.165-170
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• 1998

Deposition of diamond on silicon substrates has been performed by RF HPCVD (Helicon Plasma Chemical Vapor Deposition) from methane-hydrogen gas mixture. Growth properties and deposition condition conditions have been studies as functions of substrate temperature ($750^{\circ}C$~$850^{\circ}C$). Si p-type (100) wafers were used as a substrate. The chharecterizations of the gaind thin films by SEM, AFM and Raman seattring are diamond crystallites which include disordered graphit.

• 한국수소및신에너지학회논문집
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• 제21권1호
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• pp.50-57
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• 2010

Stepwise production of syn-gas and hydrogen from methane on ferrite based media added with yttria-stabilized zirconia (YSZ) was carried out using a fixed bed infrared reactor. In this study, all M-ferrite (M=Co, Cu, Mn and Ni) media were prepared by co-precipitation method, and there the YSZ was added as a binder to improve thermal stability, reactivity, and resistance against carbon deposition. Most of the ferrite media containing YSZ showed the good redox property for temperature programmed reduction/oxidation (TPR/O) tests. Notably, the Cu-substituted ferrite medium with YSZ showed the great resistance against carbon deposition as well as the good reactivity for the stepwise production of syngas and hydrogen. Furthermore, it also showed the good durability without significant deactivation during five repeated cyclic tests.

• 한국표면공학회지
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• 제50권2호
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• pp.98-107
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• 2017

Pd-based membranes have been widely used in hydrogen purification and separation due to their high hydrogen diffusivity and infinite selectivity. However, it has been difficult to fabricate thin and dense Pd-based membranes on a porous stainless steel(PSS) support. In case of a conventional PSS support having the large size of surface pores, it was required to use complex surface treatment and thick Pd coating more than $6{\mu}m$ on the PSS was required in order to form pore free surface. In this study, we could fabricate thin and dense Pd membrane with only $3{\mu}m$ Pd layer on a new PSS support manufactured by metal injection molding(MIM). The PSS support had low surface roughness and mean pore size of $5{\mu}m$. Pd membrane were prepared by advanced Pd sputter deposition on the modified PSS support using fine polishing and YSZ vacuum filling surface treatment. At temperature $400^{\circ}C$ and transmembrane pressure difference of 1 bar, hydrogen flux and selectivity of $H_2/N_2$ were $11.22ml\;cm^{-2}min^{-1}$ and infinity, respectively. Comparing with $6{\mu}m$ Pd membrane, $3{\mu}m$ Pd membrane showed 2.5 times higher hydrogen flux which could be due to the decreased Pd layer thickness from $6{\mu}m$ to $3{\mu}m$ and an increased porosity. It was also found that pressure exponent was changed from 0.5 on $6{\mu}m$ Pd membrane to 0.8 on $3{\mu}m$ Pd membrane.

• 전기전자학회논문지
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• 제23권3호
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• pp.1033-1037
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• 2019

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• 한국수소및신에너지학회논문집
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• 제8권4호
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• pp.145-154
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• 1997

Pd, Pd-Rh 게이트 MOS센서의 $H_2$, $H_2S$ 검지특성과 Pd박막의 중착조건이 감지특성에 미치는 영향에 대해서 조사하였다. rf power의 증가와 증착온도의 증가는 모두 센서의 감도와 초기반응속도를 감소시켰으며 rf power의 변화보다는 증착온도의 변화에 의한 효과가 현저하였다. Pd-Rh 센서의 경우 순수한 Pd 센서에 비해 감도가 낮았으며 Rh의 양이 증가할수록 감도는 감소하였다. Pd-Rh 센서에서 $H_2$가 $H_2S$보다 더 뛰어난 감도를 보여주었다. rf power, 증착온도, 기판의 변화가 MOS센서의 감도나 초기반응속도 등의 센서특성에 영향을 미친다는 사실을 확인할 수 있었다.

• 한국재료학회지
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• 제11권7호
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• pp.550-555
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• 2001

rf PECVB법을 이용하여 붕규산 유리 기판 위에 diamond like carbon(DLC) 박막을 증착하였다. 메탄(CH$_4$)-수소(H$_2$) 혼합 가스를 전구체 가스로 사용하였다. DLC 박막의 형상, 구조 및 광학적 특성은 SEM, 라만 및 UV 스펙트럼으로 분석하였다. 증착 속도는 혼합 가스의 수소 농도에 따라 증가하다가, 혼합 가스 유량이 25 sccm 이상에서는 일정하게 되었다. UV스펙트럼으로 계산한 박막의 optical band gap은 증착 시간과 DC serf bias의 증가에 따라 감소하는 경향을 나타냈으나, 수소함량에 의해서는 거의 영향이 없었다. 박막의 투과율에 가장 큰 영향을 미치는 인자는, 특히 자외선 영역과 가시광선 영역에서, bias 전압이었다.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2001년도 제22회 KOSCI SYMPOSIUM 논문집
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• pp.75-81
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• 2001

MCVD(modified chemical vapor deposition) used in making optical-fiber currently utilizes the hydrogen-oxygen burner as a energy supply source. To improve the productivity and to reduce the manufacturing cost of optical-fiber, a natural gas-oxygen burner has been developed. The manufacturing processes of optical-fiber consist of vapor deposition, collapse and drawing processes. Among these processes, the vapor deposition and the collapse processes are important in terms of improving the productivity and saving the production cost. The vapor deposition and collapse processes are performed by combustion heat and flame force supplied by a burner. So the flame force of the burner used in these processes is required to have an optimal and consistent value in order to allow uniform heating and collapse of quartz tube. In this regard, the momentum ratio of natural gas and oxygen has been optimally determined by modification of a burner and the inlet flow pass also has been modified.