• Transactions of the Korean hydrogen and new energy society
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• v.17 no.2
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• pp.166-173
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• 2006

Catalytic reforming of $CO_2$ by $CH_4$ over Ni-YSZ based catalysts was investigated to produce syngas as raw material of high valued chemicals and develop high performance catalyst electrode for an internal reforming of $CO_2$ in SOFC system. Ni-YSZ based catalysts were prepared using physical mixing and maleic acid methods to improve catalytic activity and inhibition of carbon deposition. The catalysts before and after the reaction were characterized by $N_2$ physisorption, TPR(temperature programed reduction), XRD and impedance analyzer. The conversions for $CO_2$ and $CH_4$ over Ni-MgO catalyst showed 90% but much amount of carbon deposition was detected on catalyst surface. On the other hand, the conversions for $CO_2$ and $CH_4$ over NiO-YSZ-$CeO_2$ catalyst showed 100% and 85% respectively, and carbon deposition on catalyst surface was inhibited under the tested condition. It was concluded that NiO-YSZ-$CeO_2$ catalyst is a promising candidate for the catalytic reforming of $CO_2$ and the internal reforming in SOFC system.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Journal of the Korean institute of surface engineering
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• v.51 no.5
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• pp.277-290
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• 2018

In this study, Pd-Ni-Ag alloy hydrogen separation membranes were fabricated by Pd/Ag/Pd/Ni/Pd multi-layer sputter deposition on the modified MIM(Metal Injection Molding)-PSS(Porous Stainless Steel) support and followed heat treatment. Nickel, used as an alloying element in Pd alloy membranes, is inexpensive and stable material in a hydrogen isotope environment at high temperature up to 1123 K. Hydrogen perm-selectivity of Pd-Ni-Ag alloy membranes is affected not only by composition of membrane films but also by other factors such as surface properties of PSS support, microstructure of membrane films and inter-diffused impurities from PSS support. In order to clarify the effect of surface Ni composition on hydrogen perm-selectivity of Pd-Ni-Ag alloy membranes, the other effects were significantly minimized by the formation of dense and homogeneous Pd-Ni-Ag alloy membranes. Hydrogen permeation test showed that hydrogen permeability decreased from $7.6{\times}10^{-09}$ to $1.02{\times}10^{-09}mol/m{\cdot}s{\cdot}Pa^{0.5}$ as Ni composition increased from 0 to 16 wt% and the selectivity for $H_2/N_2$ was infinite.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.4
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• pp.301-306
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• 2010

The present work is performed to photocatalytically reduce Cr(VI) by means of metal deposited anodized $TiO_2$ tubes, which are prepared by anodization of Ti foil followed by metal deposition. Stably immobilized photo-reactive materials are favored in the field of detoxification in a conventional aqueous medium, preventing gradual loss of efficiency and process malfunction due to detachment of the materials. The prepared samples are characterized by SEM, TEM, EDAX, and photocurrent. The metal deposited-$TiO_2$ electrode shows higher efficiency for Cr(VI) reduction (ca. 20%) and higher ability for adsorption (4~5 times) than pure one.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.2
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• pp.181-192
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• 2006

PEC전지 전극으로 사용될 수 있는 CdSe는 수용액상에서 광부식이 심하기 때문에 투명한 보호막이 필요하다. TiO2는 광부식이 심한 광전극의 보호막으로 적당하며 이 논문에서 화학적 방법(전기증착과 화학조증착)을 이용하여 산성용액이나 알칼리용액에서 TiO2 박막을 제조하여 광흡수나 광전류를 측정하였다. XRD를 이용해서 제조된 TiO2 박막의 결정성을 확인하였으며 막의 표면특성은 SEM으로 측정하였으며 광흡수 특성이 관찰되었다. 제조된 TiO2 박막의 광전류는 100 mw/cm2의 광세기를 가지는 제논 램프를 이용하여 측정하였다. CdSe에 TiO2박막을 코팅했을 때의 CdSe막의 광흡수와 광전류를 측정하여 TiO2 코팅효과를 관찰하였다.

• Proceedings of the Korean Ceranic Society Conference
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• 1986.12a
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• pp.211-225
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• 1986

Silicon carbide coating has been studied using a graphite substrate, a mixture of tetramethylsilane and hydrogen or argon at deposition temperature (T) of 950 to $1200^{\circ}C$ total pressure of 20 to 50 torr and carrier gas flow rate of 0 to 901/h. Deposition kinetic study has shown that a transition, from a surface reaction limited process to a diffusion limited one, takes place near $1100^{\circ}C$. Deposition rate depends directly upon the experimental parameters. The influence of the main process parameters is also discussed to relate the physiochemical properties of the coating to the deposition conditions.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.202-207
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• 2024

In this study, we undertook detailed experiments to increase hydrogen production efficiency by optimizing the thickness of titanium dioxide (TiO₂) thin films. TiO₂ films were deposited on p-type silicon (Si) wafers using atomic layer deposition (ALD) technology. The main goal was to identify the optimal thickness of TiO₂ film that would maximize hydrogen production efficiency while maintaining stable operating conditions. The photoelectrochemical (PEC) properties of the TiO₂ films of different thicknesses were evaluated using open circuit potential (OCP) and linear sweep voltammetry (LSV) analysis. These techniques play a pivotal role in evaluating the electrochemical behavior and photoactivity of semiconductor materials in PEC systems. Our results showed photovoltage tended to improve with increasing thickness of TiO₂ deposition. However, this improvement was observed to plateau and eventually decline when the thickness exceeded 1.5 nm, showing a correlation between charge transfer efficiency and tunneling. On the other hand, LSV analysis showed bare Si had the greatest efficiency, and that the deposition of TiO₂ caused a positive change in the formation of photovoltage, but was not optimal. We show that oxide tunneling-capable TiO₂ film thicknesses of 1~2 nm have the potential to improve the efficiency of PEC hydrogen production systems. This study not only reveals the complex relationship between film thickness and PEC performance, but also enabled greater efficiency and set a benchmark for future research aimed at developing sustainable hydrogen production technologies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.63-67
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• 1991

Amorphous silicon films were deposited on glass, [100] single crystal silicon wafer with thermally grown silicon dioxide, and [100] silicon wafer substrates by Plasma Enhanced Chemical Vapor Deposition(with argon diluted silane source gas). Growth rate, UV optical band edge, and the hydrogen quantity in the amorphous silicon films have been investigated as a function of the preparation conditions by measuring film thickness, UV-absorbency, and FT-IR transmittance. The growth rate of the ${\alpha}$-Si:H films increases with increasing substrate temperture, flow rate and R.F. power density. The UV optical band edge shifts to blue with the increases in the deposition pressure. Increasing substrate temperature shifts the UV optical band edge of the films to red. Hydrogen quantity in the ${\alpha}$-Si:H films increases with an increases in the R.F. powr and decreases with an increase in the substrate temperature.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.513-520
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• 1990

Diamond film was deposited on Si wafer substrate from a gas mixture of methane, hydrogen and oxygen by microwave plasma-assisted chemical vapor deposition. The effects of the pre-treatments of the substrate and of the oxygen addition on the diamond film synthesis are described. In order to obtain diamond film, the substrate was pre-treated with 3 kinds of methods. When the substrate was ultrasonically vibrated within the ethyl alcohol dispersed with 25${\mu}{\textrm}{m}$ diamond powder, the denset diamond film was deposited. Addition of oxygen in the gas mixture of methane and hydrogen improved the crystallinity of the deposited diamond film and also increased the deposition rate of the diamond film more than two times.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.285-287
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• 1997

We have deposited hydrogen-free diamond-like carbon (DLC) films by pulsed laser deposition of graphite. Pulsed laser deposition (PLD) can be utilized to generate films with desired properties quite different from those of the starting material. Since DLC films grown by PLD using turbo pump are perpared without hydrogen, they have a higher density and a higher index of refraction than the hydrogenated DLC films. In this study, effects of the substrate temperature and laser energy density on the properties of DLC films were systematically investigated. The structure and properties of the films have been studied by scanning electron microscopy (SEM), Fourier Transform Infrared (FT-IR), X-ray diffraction (XRD), and Raman spectroscopy.