• Korean Journal of Materials Research
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• v.4 no.2
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• pp.227-232
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• 1994

Diamondlike carbon thin film has been fabricated with low discharging frequency, 450KHz by plasma enhanced chemical vapor deposition. Its physical properties such as optical band gap, microhardness and internal stress have been compared with 13.56MHz film. Optical band gap of 450KHz DLC thin film was less than 13.56MHz film and it was found that C-H bond concentration and total hydrogen contents in the film decreased greatly as the result of FT-IR and CHN analysis. Also, when DLC thin film was fabricated with low discharging frequency, it was expected that the adhesion of the film to the substrate was improved by the great decrease of internal stress without any considerable decrease of microhardness.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.33.1-33.1
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• 2018

pH is expressed mathematically as $pH=-{\log}[H^+]$, is a measure of the hydrogen ion concentration, [$H^+$] to specify the acidity or basicity of an aqueous solution. The pH scale usually ranges from 0 to 14. Every aqueous solution can be measured to determine its pH value. The pH values below 7.0 express the acidity, above 7.0 are alkalinity and pH 7.0 is a neutral solution. The solution pH can be determined by indicator or by measurement using pH sensor, which measuring the voltage generated between a glass electrode and a reference electrode according to the Nernst Equation. The pH value of solutions depends on the temperature and the activity of contained ions. In nickel electroless plating process, the controlled pH value in some limited ranges are extremely important to achieve optimal deposition rate, phosphorus content as well as solution stability. Basically, nickel electroless plating solution contains of $Ni^{2+}ions$, reducing agent, buffer and complexing agents. The plating processes are normally carried out at $82-92^{\circ}C$. However, the change of its pH values with temperatures does not follow any rule. Thus, the purpose of study is to understand the relationship between pH and temperature of some based solutions and electroless nickel plating solutions. The change of pH with changing temperatures is explained by view of the thermal dynamic and the practical measurements.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.79-82
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• 2005

This study investigated the effect of nitriding on the hardness and adhesion properties of $TiB_2$ coatings. Inductively coupled plasma (ICP) was used for both nitriding and deposition. By applying ICP, H13 steel was nitrided at a high rate of $50\;{\mu}m/hr$. After nitriding, a Fe4N compound layer or a diffusion layer was formed according to the hydrogen/nitrogen ratio. Both layers could improve the load-bearing capacity of the substrate by increasing the substrate hardness. The adhesion of the $TiB_2$ coatings increased to $\~30N$ after nitriding, but the hardness of the coating was lowered to 20-30 GPa. However, the adhesion of the $TiB_2$ coatings with a high hardness (>60 GPa) could not be improved substantially by nitriding due to the large difference in hardness between the coating and the substrate. The grain size of the $TiB_2$ coating was larger on the nitrided substrates, resulting in a decrease in the hardness of the coating.

• Corrosion Science and Technology
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• v.17 no.1
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• pp.1-5
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• 2018

As structural materials, magnesium (Mg) alloys have been widely used in the fields of aviation, automobiles, optical instruments, and electronic products. There are few studies on the effect of coating conditions on the compositional variation during the formation process of the conversion coatings. Rare-earth based conversion coating on AZ91 magnesium alloy was prepared in ceric sulfate and hydrogen peroxide contained solution. The element composition and valence as well as their distribution in the coating were analyzed with energy dispersive X-ray spectroscopy (EDS), Electron probe micro-analyzer (EPMA), X-ray photoelectron spectroscopy (XPS). The effect of treating process on the element composition were also studied. It was found that the conversion coating surface consists of Mg, Al, O, Ce, and the weight content of Ce in the coating was affected by the treating solution concentration and immersion time; the Ce element was distributed in the coating non-uniformly and existed in the form of $Ce^{+3}$ and $Ce^{+4}$, while the O element existed in the form of $OH^-$, $O^{2-}$, $H_2O$. Based on microscopic analysis results, the electrochemical deposition mechanism on the micro-anode and micro-cathode in the process of the coating growth was suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.614-614
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• 2013

The effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. A synthetic method to produce such large area graphene films with precise thickness from mono- to few-layer would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform mono-, bi-, and few-layer graphene films were successfully synthesized on copper surface in selective growth windows, with a finely tuned total pressure and $CH_4$/$H_{2gas}$ ratio. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.252-252
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• 2013

최근 그래핀, hexagonal boron nitride (h-BN) 및 $MoS_2$ (molybdenum disulfide)와 같은 2차원 결정 물질들은 무어의 법칙(Moore's Law)를 뛰어넘어 계속적인 소자의 소형화를 가능케 하고 또한 대면적, 저비용 소자 개발을 가능케 하는 우수한 특성을 가진 차세대 반도체 트랜지스터 소재로 각광받고 있다. $MoS_2$는 bulk 상태일 때는 1.2 eV의 indirect 밴드갭을 가지지만 단층형태일 때는 1.8 eV의 direct 밴드갭을 가지며 dielectric screening 기법등을 통해 mobility를 향상시킬 수 있는 것으로 연구된 바 있다. 본 연구에서는 화학기상증착 (chemical vapor deposition)법을 이용하여 $MoS_2$ 박막을 형성하기 위한 기초연구인 Mo 전구체의 특성평가 및 적합한 공정조건 개발 연구를 수행하였다. 사용한 전구체는 $Mo(CO)_6$ (Molybdenum hexacarbonyl)이고, 온도 및 압력, 반응기체(H2 S, Hydrogen sulfide) 유량 등의 공정 조건 변화에 따른 거동을 Fourier transform infrared spectroscopy (FT-IR) 시스템을 사용하여 측정하였다. 또한 $Mo(CO)_6$의 분자구조를 상용 프로그램인 Gaussian으로 시뮬레이션 하여 실제 FT-IR 측정 결과값과 비교 분석하였다.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.169-181
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• 2020

The ferroelectricity in emerging fluorite-structure oxides such as HfO₂ and ZrO₂ has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2052-2054
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• 2005

TFT-LCD requires to use poly silicon for High resolution and High integration. Thin film make of Poly silicon on the excimer laser-induced crystallization of PECVD(plasma-enhanced chemical vapor deposition)-grown amorphous silicon. In the thin film hydrogen affects to a device performance from bad elements like eruption, void and etc. So dehydrogenation prior to laser exposure was necessary. In this study, use RTP(Rapid Thermal Process) at various temperature from $670^{\circ}C$ to $750^{\circ}C$ and fabricate poly-silicon. it propose optimized RTP window to compare grain size to use poly silicon's SEM pictures and crystallization to analyze Raman curved lines.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.25-27
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• 2007

$Eu^{2+}$-doped $Ca_2Si_5N_8$ was grown on Si(100) substrate using metal-organic deposition (MOD) method and post-annealed at $900^{\circ}C$ in various atmosphere. Luminescence properties of these thin films were investigated with variations of $Eu^{2+}$-doped concentrations and annealing atmosphere. Thin film was formed with clean surface and uniform thickness of about 72 nm. From the measurements of luminescence properties of thin films, film must be post-annealed in nitrogen or mixture of nitrogen and hydrogen atmosphere to emit a sufficient light. For $Ca_{1.5}Eu_{0.5}Si_5N_8$ thin film annealed at $900^{\circ}C$ in nitrogen atmosphere, excitation band from 380 to 420 nm was detected with the maximum intensity at 404 nm and two broad emission bands from 530 to 630 nm were observed. These broad excitation and emission bands must be attributed to the nitrogen incorporations into the films. From the results, $Ca_{2-x}Eu_xSi_5N_8$ thin film has probability for next generation thin film lighting applications such as light emitting diode (LED) or electro-luminescence (EL).