• Title/Summary/Keyword: Hydrogen deposition

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Carbon Nanotube Growth on Invar Alloy using Coal Tar Pitch (콜타르피치를 이용한 Invar 합금 위 탄소나노튜브의 합성)

  • Kim, Joon-Woo;Jeong, Goo-Hwan
    • Journal of the Korean institute of surface engineering
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    • v.50 no.6
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    • pp.516-522
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    • 2017
  • We report the growth of carbon nanotubes (CNT) on Invar-42 plates using coal tar pitch (CTP) by chemical vapor deposition (CVD) method. The solid phase CTP is used as an inexpensive carbon source since it produces a bunch of hydrocarbon gases such as $CH_4$ and other $C_xH_v$ by thermal decomposition over $450^{\circ}C$. The Invar-42 is a representative Ni-based ferrous alloy and can be used repetitively as a substrate for CNT growth because Ni and Fe are used as very active catalytic elements. We changed mixing ratio of carrier gases, argon and hydrogen, and temperature of growth region. It was found that the optimum gas ratio and temperature for high quality CNT growth are $Ar:H_2=400:400$ sccm and $1000^{\circ}C$, respectively. In addition, the carbon nanoball (CNB) was also obtained by just changing the mixing ratio to $Ar:H_2=100:600$ sccm. Finally, CTP can be employed as a versatile carbon source to produce various carbon-based nanomaterials, such as CNT and CNB.

Properties of ZnO:Al thin films prepared by a single target sputtering

  • An, Ilsin;Ahn, You-Shin;Taeg, Lim-Won
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.2
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    • pp.78-84
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    • 1998
  • ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al2O3. The most conductive film was obtained from the target with 2.0∼2.2 wt.% of Al2O3. Optical properties studied with spectroscopic ellipsometry showed band gap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. when hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.

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Deposition of Amorphous Carbon Layer by PECVD (PECVD에 의한 비정질 탄소층 증착)

  • Jung, Ilhyun
    • Applied Chemistry for Engineering
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    • v.19 no.3
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    • pp.322-325
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    • 2008
  • 3,3-Dimethyl-1-butene ($C_6H_{12}$) monomer was deposited using a plasma-enhanced chemical vapor deposition (PECVD) instrument. The more the R.F. power/pressure ratio in FT-IR spectrum, the less the hydrogen quantity and the dangling bond in amorphous carbon films observed so that the mechanical property of the films are improved related to the density. Also, with the increase D peak in Raman spectrum is increased and the ring structure's films are produced. According to these results, hardness and modulus are 12 GPa and 85 GPa, respectively. The refractive index (n) and extinction coefficients (k) of the deposited films are increased with the increase in a power/pressure ratio.

Plasma-Enhanced Atomic-Layer-Deposited SiO2 and SiON Thin Films at Low Temperature (< 300℃) using ICP Type Remote Plasma for 3-Dimensional Electronic Devices (3차원 소자 제작을 위한 ICP Type Remote PEALD를 이용한 저온(< 300℃) SiO2 및 SiON 박막 공정)

  • Kim, Dae Hyun;Park, Tea Joo
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.98-102
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    • 2019
  • Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

Evaluation of cryogenic tensile properties of composite materials fabricated by fused deposition modeling 3D printer

  • Kang, Singil;Cha, Hojun;Ryu, Seungcheol;Kim, Kiwhan;Jeon, Seungmin;Lee, Jaesun;Kim, Seokho
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.1
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    • pp.8-12
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    • 2022
  • Recently, research on applying composite materials to various industrial fields is being actively conducted. In particular, composite materials fabricated by Fused Deposition Modeling 3D printers have more advantages than existing materials as they have fewer restrictions on manufacturing shape, reduce the time required, weight. With these advantages, it is possible to consider utilizing composite materials in cryogenic environments such as the application of liquid oxygen and liquid hydrogen, which are mainly used in an aerospace and mobility. However, FDM composite materials are not verified in cryogenic environments less than 150K. This study evaluates the characteristics of composite materials such as tensile strength and strain using a UTM (Universal Testing Machine). The specimen is immersed in liquid nitrogen (77 K) to cool down during the test. The specimen is fabricated using 3D print, and can be manufactured by stacking reinforced fibers such as carbon fiber, fiber glass, and aramid fiber (Kevlar) with base material (Onyx). For the experimental method and specimen shape, international standards ASTM D638 and ASTM D3039 for tensile testing of composite materials were referenced.

THE EFFECT OF THE HIGH DENSITY PLASMA ON THE DIAMOND-LIKE CARBON FILMS

  • Kim, H.;D.H. Jung;Park, B.;K. C. Yoo;Lee, J. J.;J. H. Joo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.10a
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    • pp.54-54
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    • 2003
  • DLC films were deposited on Si(100) substrates by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD). A mixture of acetylene (C$_2$H$_2$) and argon (Ar) gases was used as the precursor and plasma source, respectively. The structure of the films was characterized by the Raman spectroscopy. Results from the Raman spectroscopy analysis indicated that the property change of the DLC films is due to the sp$^3$ and sp$^2$ ratio in the films under various conditions such as ICP power, working pressure and RF substrate bias. The hydrogen content in the DLC films was determined by an electron recoil detector (ERB). The roughness of the films was measured by atomic force microscope (Am). A microhardness tester was used for the hardness and elastic modulus measurement. The DLC film showed a maximum hardness of 37㎬. In this work, the relationship between deposition parameters and mechanical properties were discussed.

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Preparation of perovskite-based catalysts and fuel injection system for high durability of diesel reforming (디젤 개질을 위한 페로브스카이트 구조 촉매와 연료주입 시스템의 개발)

  • Rhee, Junki;Park, Sangsun;Shul, Yong-Gun
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.115.2-115.2
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    • 2010
  • Autothermal reforming(ATR) processes of hydrocarbon liquids such as diesel fuels are spotlighted as methods to produce hydrogen for Fuel cell. However, the use of heavy hydrocarbons as feedstocks for hydrogen production causes some problems which increase the catalyst deactivation by the carbon deposition. Coking can be inhibited by increasing the water dissociation on the catalyst surface. This results in catastrophic failure of whole system. Performance degradation of diesel autothermal reforming leads to increase of undesirable hydrocarbons at reformed gases and subsequently decrease the performance. In this study, perovskite-based catalysts were investigated as alternatives to substitute the noble metal catalyst for the ATR of diesel. The investigated perovskite structure was based on LaCrO3. and metals were added at the A-site to enhance oxygen ion mobility, transition metals were doped on the B-site to enhance the reformation. Substituted Lanthanum chromium perovskite were made by aqueous combustion synthesis, which can produce high surface area. And for the homogeneous fuel supply, we made ultrasonic injection system for reforming. We compared durability of evaporation system and ultrasonic system for fuel injection.

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The Effects of the Annealing on the Reflow Property of Cu Thin Film (열처리에 따른 구리박막의 리플로우 특성)

  • Kim Dong-Won;Kim Sang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.38 no.1
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    • pp.28-36
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    • 2005
  • In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16~0.24 11m with aspect ratio of 4.17~6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

Laser Crystallization of a-Si:H films prepared at Ultra Low Temperature($<150^{\circ}C$) by Catalytic CVD

  • Lee, Sung-Hyun;Hong, Wan-Shick;Kim, Jong-Man;Lim, Hyuck;Park, Kuyng-Bae;Cho, Chul-Lae;Lee, Kyung-Eun;Kim, Do-Young;Jung, Ji-Sim;Kwon, Jang-Yeon;Noguch, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1116-1118
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    • 2005
  • We studied laser crystallization of amorphous silicon films prepared at ultra low temperatures ($<150^{\circ}C$). Amorphous silicon films having a low content of hydrogen were deposited by using catalytic chemical vapor deposition method. Influence of process parameters on the hydrogen content was investigated. Laser crystallization was performed dispensing with the preliminary dehydrogenation process. Crystallization took place at a laser energy density value as low as $70\;mJ/cm^2$, and the grain size increased with increasing the laser energy. The ELA crystallization of Catalytic CVD a-Si film is a promising candidate for Poly-Si TFT in active-matrix flexible display on plastic substrates.

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Synthesis and field emission of double-walled carbon nanotubes

  • Lee, S.H.;Jung, S.I.;Lee, T.J.;Kim, W.S.;Cho, J.H.;Kang, H.J.;Kwon, G.M.;Park, C.J.;Seo, S.H.;Jeon, K.Y.;Ha, B.;Lee, C.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1087-1090
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    • 2005
  • We have investigated the synthesis and field emission properties of high-quality double-walled carbon nanotubes (DWCNTs) using a catalytic chemical vapor deposition method and a hydrogen arc discharge method. The produced carbon materials using a catalytic CVD method indicated high-purity DWCNT bundles free of amorphous carbon covering on the surface. By adopting a hydrogen arc discharge method, we could obtained high-purity DWCNTs in large-scale. DWCNTs showed low turn-on voltage and higher emission stability compared with SWCNTs.

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