• 한국수소및신에너지학회논문집
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• 제17권2호
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• pp.166-173
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• 2006

Catalytic reforming of $CO_2$ by $CH_4$ over Ni-YSZ based catalysts was investigated to produce syngas as raw material of high valued chemicals and develop high performance catalyst electrode for an internal reforming of $CO_2$ in SOFC system. Ni-YSZ based catalysts were prepared using physical mixing and maleic acid methods to improve catalytic activity and inhibition of carbon deposition. The catalysts before and after the reaction were characterized by $N_2$ physisorption, TPR(temperature programed reduction), XRD and impedance analyzer. The conversions for $CO_2$ and $CH_4$ over Ni-MgO catalyst showed 90% but much amount of carbon deposition was detected on catalyst surface. On the other hand, the conversions for $CO_2$ and $CH_4$ over NiO-YSZ-$CeO_2$ catalyst showed 100% and 85% respectively, and carbon deposition on catalyst surface was inhibited under the tested condition. It was concluded that NiO-YSZ-$CeO_2$ catalyst is a promising candidate for the catalytic reforming of $CO_2$ and the internal reforming in SOFC system.

• 한국진공학회지
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• 제9권3호
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• pp.197-206
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• 2000

(hfc)Cu(1,5-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) 증착원을 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition) Cu박막을 형성하였고, 운반기체가 MOCVD Cu 증착 특성에 미치는 영향에 관하여 조사하였다. 증착된 Cu 박막은 $H_2$ 운반 기체를 사용한 경우 Ar을 운반기체로 사용한 경우에 비하여 증착률의 증가와 더불어 낮은 비저항을 갖는 박막을 얻을 수 있었다. 또한 표면 거칠기의 개선과 강한 (111) 우선 배향성을 나타내는 박막을 얻을 수 있었으나 접착성의 경우에 있어서는 H$_2$운반 기체를 사용한 경우 감소하는 결과를 나타내었다. 이러한 접착성 감소의 원인은 AES분석에서 확인된 바와 같이 박막내부에 존재하는 F의 영향인 것으로 사료된다. H(hfac) ligand의 첨가 효과에 대하여 조사한 결과에서는 Ar 운반 기체를 사용한 경우 H(hfac)첨가시 증착률의 향상이 이루어졌으나 $H_2$운반 기체의 경우 큰 변화를 나타내지 않았고, 비저항의 경우에는 운반 기체와 관계없이 감소하는 결과를 보여 H(hfac) 사용이 증착 특성 개선에 효과적으로 나타났다. 따라서 본 연구에서는 운반기체 변화 및 H(hfac) ligand의 첨가 실험을 통해 MOCVD Cu의 증착기구를 조사하였으며, 이러한 공정조건의 변화가 Cu 박막의 표면거칠기 개선과 동시에 비저항을 낮추는 역할을 하는 것으로 나타났다.

• 한국표면공학회지
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• 제51권5호
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• pp.277-290
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• 2018

In this study, Pd-Ni-Ag alloy hydrogen separation membranes were fabricated by Pd/Ag/Pd/Ni/Pd multi-layer sputter deposition on the modified MIM(Metal Injection Molding)-PSS(Porous Stainless Steel) support and followed heat treatment. Nickel, used as an alloying element in Pd alloy membranes, is inexpensive and stable material in a hydrogen isotope environment at high temperature up to 1123 K. Hydrogen perm-selectivity of Pd-Ni-Ag alloy membranes is affected not only by composition of membrane films but also by other factors such as surface properties of PSS support, microstructure of membrane films and inter-diffused impurities from PSS support. In order to clarify the effect of surface Ni composition on hydrogen perm-selectivity of Pd-Ni-Ag alloy membranes, the other effects were significantly minimized by the formation of dense and homogeneous Pd-Ni-Ag alloy membranes. Hydrogen permeation test showed that hydrogen permeability decreased from $7.6{\times}10^{-09}$ to $1.02{\times}10^{-09}mol/m{\cdot}s{\cdot}Pa^{0.5}$ as Ni composition increased from 0 to 16 wt% and the selectivity for $H_2/N_2$ was infinite.

• 한국수소및신에너지학회논문집
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• 제21권4호
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• pp.301-306
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• 2010

The present work is performed to photocatalytically reduce Cr(VI) by means of metal deposited anodized $TiO_2$ tubes, which are prepared by anodization of Ti foil followed by metal deposition. Stably immobilized photo-reactive materials are favored in the field of detoxification in a conventional aqueous medium, preventing gradual loss of efficiency and process malfunction due to detachment of the materials. The prepared samples are characterized by SEM, TEM, EDAX, and photocurrent. The metal deposited-$TiO_2$ electrode shows higher efficiency for Cr(VI) reduction (ca. 20%) and higher ability for adsorption (4~5 times) than pure one.

• 한국수소및신에너지학회논문집
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• 제17권2호
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• pp.181-192
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• 2006

PEC전지 전극으로 사용될 수 있는 CdSe는 수용액상에서 광부식이 심하기 때문에 투명한 보호막이 필요하다. TiO2는 광부식이 심한 광전극의 보호막으로 적당하며 이 논문에서 화학적 방법(전기증착과 화학조증착)을 이용하여 산성용액이나 알칼리용액에서 TiO2 박막을 제조하여 광흡수나 광전류를 측정하였다. XRD를 이용해서 제조된 TiO2 박막의 결정성을 확인하였으며 막의 표면특성은 SEM으로 측정하였으며 광흡수 특성이 관찰되었다. 제조된 TiO2 박막의 광전류는 100 mw/cm2의 광세기를 가지는 제논 램프를 이용하여 측정하였다. CdSe에 TiO2박막을 코팅했을 때의 CdSe막의 광흡수와 광전류를 측정하여 TiO2 코팅효과를 관찰하였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 1986년도 Priceedings Of The Third Korea-Japan Seminar On New Ceramics
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• pp.211-225
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• 1986

Silicon carbide coating has been studied using a graphite substrate, a mixture of tetramethylsilane and hydrogen or argon at deposition temperature (T) of 950 to $1200^{\circ}C$ total pressure of 20 to 50 torr and carrier gas flow rate of 0 to 901/h. Deposition kinetic study has shown that a transition, from a surface reaction limited process to a diffusion limited one, takes place near $1100^{\circ}C$. Deposition rate depends directly upon the experimental parameters. The influence of the main process parameters is also discussed to relate the physiochemical properties of the coating to the deposition conditions.

• 한국재료학회지
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• 제34권4호
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• pp.202-207
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• 2024

In this study, we undertook detailed experiments to increase hydrogen production efficiency by optimizing the thickness of titanium dioxide (TiO₂) thin films. TiO₂ films were deposited on p-type silicon (Si) wafers using atomic layer deposition (ALD) technology. The main goal was to identify the optimal thickness of TiO₂ film that would maximize hydrogen production efficiency while maintaining stable operating conditions. The photoelectrochemical (PEC) properties of the TiO₂ films of different thicknesses were evaluated using open circuit potential (OCP) and linear sweep voltammetry (LSV) analysis. These techniques play a pivotal role in evaluating the electrochemical behavior and photoactivity of semiconductor materials in PEC systems. Our results showed photovoltage tended to improve with increasing thickness of TiO₂ deposition. However, this improvement was observed to plateau and eventually decline when the thickness exceeded 1.5 nm, showing a correlation between charge transfer efficiency and tunneling. On the other hand, LSV analysis showed bare Si had the greatest efficiency, and that the deposition of TiO₂ caused a positive change in the formation of photovoltage, but was not optimal. We show that oxide tunneling-capable TiO₂ film thicknesses of 1~2 nm have the potential to improve the efficiency of PEC hydrogen production systems. This study not only reveals the complex relationship between film thickness and PEC performance, but also enabled greater efficiency and set a benchmark for future research aimed at developing sustainable hydrogen production technologies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.63-67
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• 1991

Amorphous silicon films were deposited on glass, [100] single crystal silicon wafer with thermally grown silicon dioxide, and [100] silicon wafer substrates by Plasma Enhanced Chemical Vapor Deposition(with argon diluted silane source gas). Growth rate, UV optical band edge, and the hydrogen quantity in the amorphous silicon films have been investigated as a function of the preparation conditions by measuring film thickness, UV-absorbency, and FT-IR transmittance. The growth rate of the ${\alpha}$-Si:H films increases with increasing substrate temperture, flow rate and R.F. power density. The UV optical band edge shifts to blue with the increases in the deposition pressure. Increasing substrate temperature shifts the UV optical band edge of the films to red. Hydrogen quantity in the ${\alpha}$-Si:H films increases with an increases in the R.F. powr and decreases with an increase in the substrate temperature.

• 한국세라믹학회지
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• 제27권4호
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• pp.513-520
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• 1990

Diamond film was deposited on Si wafer substrate from a gas mixture of methane, hydrogen and oxygen by microwave plasma-assisted chemical vapor deposition. The effects of the pre-treatments of the substrate and of the oxygen addition on the diamond film synthesis are described. In order to obtain diamond film, the substrate was pre-treated with 3 kinds of methods. When the substrate was ultrasonically vibrated within the ethyl alcohol dispersed with 25${\mu}{\textrm}{m}$ diamond powder, the denset diamond film was deposited. Addition of oxygen in the gas mixture of methane and hydrogen improved the crystallinity of the deposited diamond film and also increased the deposition rate of the diamond film more than two times.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.285-287
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• 1997

We have deposited hydrogen-free diamond-like carbon (DLC) films by pulsed laser deposition of graphite. Pulsed laser deposition (PLD) can be utilized to generate films with desired properties quite different from those of the starting material. Since DLC films grown by PLD using turbo pump are perpared without hydrogen, they have a higher density and a higher index of refraction than the hydrogenated DLC films. In this study, effects of the substrate temperature and laser energy density on the properties of DLC films were systematically investigated. The structure and properties of the films have been studied by scanning electron microscopy (SEM), Fourier Transform Infrared (FT-IR), X-ray diffraction (XRD), and Raman spectroscopy.