• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.325-329
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• 2003

Effects of thermal treatment on the structural properties of diamond-like carbon (DU) films were examined. The DLC films were deposited by using a modified filtered cathodic vacuum arc (FCVA) deposition system and by varying the negative substrate bias voltage, deposition time, and nitrogen flow rate. Thermal treatment on DLC films was performed using a rapid thermal annealing (RTA) process at $600^{\circ}C$ for 2min. Raman spectroscopy, x-ray photoemission spectroscopy (XPS), atomic force microscope (AFM), and surface profiler were used to characterize the I$_{D}$I$_{G}$ intensity ratio, sp$^3$ hybrid carbon fraction, internal stress, and surface roughness. It was found for all the deposited DLC films that the RTA-treatment results in the release of internal compressive stress, while at the same time it leds to the decrease of sp$^3$ fraction and the increase of I$_{D}$I$_{G}$ intensity ratio. It was also suggested that the thermal treatment effect on the structural property of DLC films strongly depends on the diamond-like nature (i.e., sp$^3$ fraction) of as-deposited film.ed film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.98-102
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• 2003

$Ba_2NaNb_5O_{15}$, hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Na and Nb have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 450nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where low temperature phase was always formed at the stoichiometric BNN composition. However, the amount of low temperature phase decreased with the increase of excess Nb content, and the single phase (orthorhombic tungsten bronze structure) BNN thin film was obtained at the temperature as low as $750^{\circ}C$ for samples with excess niobium. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.20-25
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• 2007

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

• Polymer(Korea)
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• v.37 no.5
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• pp.587-591
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• 2013

Poly(3,4-ethylenedioxythiophene) (PEDOT) has good properties such as high conductivity, optical transmittance, and chemical stability, while offering relatively weak physicochemical properties. The main purpose of this paper is the improvement of physicochemical properties such as solvent resistance and pencil hardness of PEDOT. Carboxyl groups in the anionic type waterborne polyurethane (WPU) chains can effectively crosslink each other in the presence of aziridine, resulting in physicochemically robust PEDOT/WPU organic-organic hybrid conductive thin films. The electrical conductivity, optical properties, and physicochemical properties of the hybrid conductive film were compared by varying the solid content and WPU portion in the coating precursor solution. From the results, the transparency and surface resistance of the hybrid film show a decreasing tendency with increasing solid content in the coating precursor. Moreover, solvent resistance and hardness were dramatically enhanced by hybridization of PEDOT and crosslinked WPU due to curing reactions between carboxyl groups.

• Journal of the Korean institute of surface engineering
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• v.44 no.3
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• pp.95-104
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• 2011

Ti based nanocomposite films including V, Si and Nb (Ti-Me-N, Me=V, Si and Nb) were fabricated by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The pure Ti target was used for arc ion plating and other metal targets (V, Si and Nb) were used for sputtering process at a gas mixture of Ar/$N_2$ atmosphere. Mostly all of the films were grown with textured TiN (111) plane except the Si doped Ti-Si-N film which has strong (200) peak. The microhardness of each film was measured using the nanoindentation method. The minimum value of removal rate ($0.5{\times}10^{-15}\;m^2/N$) was found at Nb doped Ti-Nb-N film which was composed of Ti-N and Nb-N nanoparticles with small amount of amorphous phases.

• Journal of the Korean Applied Science and Technology
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• v.24 no.2
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• pp.174-181
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• 2007

In this study, $SiO_2/poly(ethylene-co-vinyl$ alcohol)(EVOH) hybrid coating materials with gas barrier property could be produced using sol-gel method. The biaxially oriented polypropylene (BOPP) substrate with surface pretreatment was coated with the prepared hybrid sols containing various inorganic silicate component by a spin coating method. Crystallization behavior of the hybrids was investigated in terms of analysis of X-ray diffraction and cooling thermogram from DSC experiment. From the morphological observation of the $SiO_2/EVOH$ hybrid gel, it was confirmed that there existed an optimum content of inorganic silicate precursor, Tetraethylorthosilicate (TEOS), to produce hybrid materials with dense microstructure, exhibiting uniformly dispersed silica particles with average size below 100 nm. When TEOS was added at below or above the optimum content, particle clusters with large domain were observed, resulting in phase separation. This morphological result was found to be in good agreement with that of oxygen permeability of the hybrid coated films. In the case of film coated with hybrid prepared from addition of 0.01 - 0.02mol of TEOS, a remarkable improvement in barrier property could be obtained, however, with the addition of TEOS more than 0.04 mol, the barrier property was dramatically reduced because of phase separation and micro-crack formation on the film surface.

• Progress in Superconductivity
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• v.9 no.2
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• pp.177-182
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• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

• Macromolecular Research
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• v.8 no.1
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• pp.6-11
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• 2000

In this study, we examined the charging behavior of chopped carbon fibers during electro-flocking process, which is one of the key processes of the novel technique for fabricating conductive polymer composite films. Short carbon fibers (CF) during electroflocking were electrically charged by the combined effect of contact charging, corona charging and tribocharging. The specific charge built on CF surface was measured by using Faraday cup method. Specific charge increased not only with increasing electric field strength and potential impressed to mesh electrode as expected from theoretical considerations in literature, but with decreasing mesh opening size due to the improved contact charging condition. However, CF length was found unexpectedly to influence the amount of CF specific charge due to the agglomerated nature of CF flocks leading to the change in charging conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.35-40
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• 2007

The new PEI(poly(epoxy-imide))-nano Silica film has been synthesized via in situ CS sol process, and the chemical bonding and microstructure of nano silica dispersed in resin were examined by FT-IR, TAG and SEM. The dielectric properties of these hybrid films over a given temperature and frequency ranges have been studied in a point of view of stable chemical bonding of nano Silica filler. The results from IR spectra and SEM photograph indicated that PEI-Silica hybrid film prepared with nano CS sol process has been synthesized in uniform and chemical bonding. The decrease property of dielectric constant with CS content, tangent loss consistent of given frequency and temperature has been explained in terms of the chain movement of polymer through chemical bonging and size effect of nano silica. The new PEI-CS sol hybrid film with such stable chemical and dielectric properties was expected to be used as a high functional coating application in ET, IT and electric power products.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.164.2-164.2
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• 2014

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of $329.7{\pm}16.9cm^2/V{\cdot}s$, and a high on-off ratio of $10^5$. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.