• Journal of Ecology and Environment
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• v.36 no.3
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• pp.193-204
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• 2013

Altitudinal patterns of plant species richness and the effects of area, the mid-domain effect, climatic variables, net primary productivity and latitude on observed richness patterns along the ridge of the Baekdudaegan Mountains, South Korea were studied. Data were collected from 1,100 plots along a 200 to 1,900 m altitudinal gradient on the ridge. A total of 802 plant species from 97 families and 342 genera were recorded. Common and rare species accounted for 91% and 9%, respectively, of the total plant species. The altitudinal patterns of species richness for total, common and rare plants showed distinctly hump-shaped patterns, although the absolute altitudes of the richness peaks varied somewhat among plant groups. The mid-domain effect was the most powerful explanatory variable for total and common species richness, whereas climatic variables were better predictors for rare plant richness. No effect of latitude on species richness was observed. Our study suggests that the mid-domain effect is a better predictor for wide-ranging species such as common species, whereas climatic variables are more important factors for range-restricted species such as rare species. The mechanisms underlying these richness patterns may reflect fundamental differences in the biology and ecology of different plant groups.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.10-13
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• 2021

Superconductor-ferromagnet thin film heterostructure is an ideal system for studying the interplay between superconductivity and ferromagnetism. These two antagonistic properties combined in thin film heterostructure create interesting proximity effects such as spin-triplet superconductivity. Thin film heterostructure of optimally doped La_2-xSr_xCuO₄(LSCO) cuprate superconductor and SrRuO₃(SRO) ruthenate ferromagnet has been grown by pulsed laser deposition. Its temperature-dependent resistivity and Hall effect measurements show that our LSCO/SRO heterostructure has both superconductivity and ferromagnetism. In the Hall effect measurement results, we find additional hump-like structures appear in the anomalous Hall effect signal in the vicinity of superconducting transition. We conclude that giant magnetoresistance of the LSCO layer distorts the AHE signal, which results in a hump-like structure.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.711-714
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• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.2
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• pp.261-267
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• 2008

One of the most important issues in fence-type PDP is low luminance and luminous efficiency. To improve luminance and luminous efficiency, new sustain electrode structure which contains long discharge gap is necessary. However, it causes rise of firing voltage. In this paper, a new fence electrode structure is proposed in order to solve these problems. To drop the firing voltage, tow hump shaped electrodes is added on the main discharge electrode, and distance between two humps is controlled. The experimental results show that the test panel with the narrow horizontal gap(40um) between two humps shows low firing voltage by 17V compared with 80um gap in spit of similar luminance and luminous efficiency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.876-884
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• 2017

The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.226-231
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• 2001

The effect of interface reaction between Mn-Zn ferrite single crystal and 61 SiO$_2$-23Pbo-6ZnO-8Na$_2$O-2K$_2$O (mol%) glass on the magnetic properties of the ferrite was investigated. After the reaction, the hump of Zn concentration appeared at the ferrite adjacent to the interface. The initial permeability of the ferrite bonded with the glass at 700 $^{\circ}C$ was 1766 at 100 KHz and reduced to 907 after reaction at 1000$^{\circ}C$. The permeability degradation with increasing reaction temperature was considered to be attributed not only to the sixe diminution of the ferrite due to the its dissolution into the glass but also to the residual stress due to the difference in expansion coefficient between the ferrite and the diffusion layer-the region of the hump of Zn concentration-adjacent to the interface.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.12
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• pp.961-967
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• 2009

A 3-dimensional numerical investigation of a WIG effect vehicle with DUP (direct underside pressurization) is performed to predict aerodynamic characteristics and the static height stability. DUP can considerably reduce take-off speed and minimize the hump drag while the vehicle accelerates on the water to take off. The DUP of the model vehicle, Aircat, consists of a propeller in the middle of the fuselage and an air chamber under the fuselage. The air accelerated by the propeller comes into the camber through the channel in the middle of fuselage and augments lift by changing its dynamic pressure to static pressure dramatically. However, the air accelerated by a propeller produces excessive drag and reduces static height stability.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.616-618
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• 2016

Four types of structure of tunnel field-effect transistors (TFETs) have been investigated by TCAD simulation. Pocket and L-shaped TFETs are better performance than single-gate and double-gate TFETs in terms of on-current and subthreshold swing. New guideline of TFETs is presented for the structure design.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.701-704
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• 2003

Scoliosis is a complex musculoskeletal dieses requiring 3-D treatment with surgical instrumentation. Conventional corrective surgery for scoliosis was done based on empirical knowledge without information of the optimum position and operative procedure. Frequently, post operative change of rib hump increase and shoulder level imbalance caused serious problems in the view of cosmetics. To investigate the effect of correction surgery, a reconstructed 3-D finite element model for King-Moe type V was developed. Vertebrae, clavicle and other bony element were represented using rigid bodies. Kinematic joints and nonlinear bar elements used to represent the intervertebral disc and ligaments according to reported experimental data. With this model, optimization technique was also applied in order to define the optimal magnitudes of correction. The optimization procedure corrected the scoliotic deformities by reducing the objective function by more than 94%. with an associated reduction of the scoliotic descriptors mainly on the frontal thoracic curve.