• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.10b
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• pp.38-38
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• 1998

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1649-1655
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• 1988

Thermally growon SiO2 films were thermally nitrided in a hot-wall furnace and in a RF-heated cold-wall reactor and their characteristics were investigated by the AES and the C-V dmeasurements. The Auger depth profile show that 200\ulcornerSiO2 film nitrided at 1200\ulcorner, for 2hrs by the hot-wall process has a nitrogen-rich layer near the SiOxNy-Si interface. However the nitrogen-ri h layer is not observed in the case of cold-wall process. The maximum flat-band voltage for the SiO2 films nitrided by the hot-wall process is higher than by the cold-wall process, and the peak value of flat-band voltage for the hot-wall process appears the longer nitridation time than that for the cold-wall process. The SiOxNy-Si interface shift toward the Si substrate for the case of the hot-wall process is larger than that for the cold-wall process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.215-221
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• 2002

Epitaxial Si layers were deposited on (100) Si substrates by hot-wall chemical vapor deposition (CVD) technique using the $SiH_2Cl_2/H_2$chemistry. Thermochemical calculations of the Si-H-Cl system were carried out to predict the window of actual Si deposition process and to investigate the effects of process variables (i.e., deposition temperature, reactor pressure, and input gas molar ratio ($H_2/SiH_2Cl_2$)) on the epitaxial growth. The calculated results were in good agreement with the experiment. Optimum process conditions were found to be the deposition temperature of 850~$950^{\circ}C$, the reactor pressure of 2~5 Torr, and the input gas molar ratio ($H_2/SiH_2Cl_2$) of 30~70, providing device-quality epitaxial layers.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.173-176
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• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• Nuclear Engineering and Technology
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• v.29 no.2
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• pp.175-180
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• 1997

It has been known that eater-side corrosion of fuel rods in nuclear reactor is accompanied with the metallic loss of wall thickness and hydrogen pickup in the fuel dadding tube. The fuel dad corrosion is one of the major factors to be controlled to maintain the fuel integrity during reactor operation. An oxide later thickness measuring device equipped with ECT probe system was developed by KAERI, and whose performance test was carried out in NDT(Non-destructive Test) hot-cell or PIE(Post Irradiation Examination) Facility. At first, the calibration/performance test was executed for the unirradiated standard specimen rod fabricated with several kinds of plastic thin films whose thickness ore predetermined, and the result of which showed a good precision within 10% of discrepancy. And then, hot test us peformed for the irradiated fuel rod selectively extracted from J44 fuel assembly discharged from Kori Unit-2. The data obtained with this device were compared with the metallographic result obtained from destructive examination in PIEF hot-cell on the same fuel rod to verify the validity of the measurement data.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.133.2-133.2
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• 2010

Fischer-Tropsch synthesis (FTS) was carried out in heat-exchanger typed reactor with cobalt metallic foam catalyst. Considering the heat and mass transfer limitations in the cobalt catalyst, a Co-foam catalyst with an inner metallic foam frame and an outer cobalt catalyst was developed. The Co-foam catalyst was highly selective toward liquid hydrocarbon production and the liquid hydrocarbon productivity at $203^{\circ}C$ reached to $52.5ml/(kg_{cat}{\cdot}h)$, which was higher than that obtained by the Co-pellet. Furthermore, the heat-exchanger typed reactor was developed to efficiently control the highly exothermic reaction heat. The reaction heat generated in the FTS reaction on the cobalt active site was easily transferred to reactor wall by the metallic foam in the catalyst and the transferred reaction heat was directly removed by the hot oil which circulated the wall side of the heat-exchanger typed reactor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.60-66
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• 1995

Abstract The experimental results which is the aerosols behavior and distribution of atomized zinc nitrate ($Zn(NO_3)_2$) solution (0.5 M) by ultrasonic vibrator were in accord with the computer simulations. i.e., most aerosols passing through the reactor (hot zone) moved toward the center of reactor by thermophoresis as the axis of reactor increase. Also, the distribution of aerosols concentration was high at the center of reactor as the axis increase. Among the synthesized ZnO particles, shell-like aggregates of fracture type which could not see at the center of reactor were observed at near the wall of reactor, and the particle size ($ 1.2 {\mu\textrm{m}$) of near the wall was larger than that ($0.9 {\mu\textrm{m}$) of the center.

• Nuclear Engineering and Technology
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• v.45 no.4
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• pp.469-476
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• 2013

In a postulated severe core damage accident in a PHWR, multiple failures of core cooling systems may lead to the collapse of pressure tubes and calandria tubes, which may ultimately relocate inside the calandria vessel forming a terminal debris bed. The debris bed, which may reach high temperatures due to the decay heat, is cooled by the moderator in the calandria. With time, the moderator is evaporated and after some time, a hot dry debris bed is formed. The debris bed transfers heat to the calandria vault water which acts as the ultimate heat sink. However, the questions remain: how long would the vault water be an ultimate heat sink, and what would be the failure mode of the calandria vessel if the heat sink capability of the reactor vault water is lost? In the present study, a numerical analysis is performed to evaluate the thermal loads and the stresses in the calandria vessel following the above accident scenario. The heat transfer from the molten corium pool to the surrounding is assumed to be by a combination of radiation, conduction, and convection from the calandria vessel wall to the vault water. From the temperature distribution in the vessel wall, the transient thermal loads have been evaluated. The strain rate and the vessel failure have been evaluated for the above scenario.

• Nuclear Engineering and Technology
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• v.10 no.1
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• pp.26-36
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• 1978

Numerical computations of radioactivities and decay energies in a spent fuel have been carried out for designing of a hot cell. Optimum wall and window thicknesses that can preserve spent fuel rods for experimental purposes are estimated with burnup rate of 33,000 MWD/T(U) which is nearly maximum from a pressurized water reactor such as the Go-Ri Unit 1. Before putting the spent fuels into a hot cell, it is assumed for thickness estimates of shield materials that they are cooled in a storage tay for several lime intervals. Considered are various types of shield materials through which changing the distances from a source to an observation point is also made.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.2
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• pp.149-157
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• 2008

During CVD process of semiconductor wafer fabrication, maintaining the uniformity of temperature distribution at wafer top surface is one of the key factors affecting the quality of final products. Effect of contact conductance between wafer and hot plate on predicted temperature of wafer was investigated. The validity of opaque wafer assumption was also examined by comparing the predicted results with Discrete Ordinate solutions accounting for semitransparent radiative characteristics of silicon. As the contact conductance increases predicted wafer temperature increases and the differences between maximum and minimum temperatures within wafer and between wafer and hot plate top surface temperatures decrease. The opaque assumption always overpredicted the wafer temperature compared to semitransparent calculation. The influences of surrounding reactor inner wall temperature and hot plate configuration are then discussed.