• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.7
• /
• pp.612-616
• /
• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the Si membrane in which MgO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$layer. The MgO layer improved adhesion of Pt thin-film to SiO$_2$layer without any chemical reactions to Pt thin-film under high annealing temperatures. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 82 mV at $N_2$flow rate of 2000 sccm/min heating power of 1.2 W. The response time($\tau$:63%) was about 50 msec when input flow was stepinput

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.8
• /
• pp.658-662
• /
• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1996.04b
• /
• pp.126-132
• /
• 1996

A laboratory scale hot strip rolling wear simulator(HRWS) was developed for the purpose of investigating the tribological phenomena occurred in production hot strip rolling mills. The HRWS' main parts are the electric heater, the mechanical descaler, tandem type 2-4Hi rolling mill stands, the cooling chamber, the tension controller and coiler. By simulating the tribelogical phenomena in rolling process at laboratory, wear patterns, cracks, cat-ear wear, black film, effect of hot rolling oil lubrication, etc. were reproduced, and discussed on the performace of simulator.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.1459-1462
• /
• 2007

In general a thermoelectric cooler (TEC) consists of a series of P type and N type thermoelectric materials sandwiched between two wafers. When a DC current passes through these materials, three different effects take place; Peltier effect, Joule heating effect and heat transfer by conduction due to temperature difference between hot and cold plates. In this study we have developed a micro TEC using $Bi_2Te_3$ (N type) and $Bi_{0.5}Sb_{1.5}Te_3$ (P type) thin films. In order to improve that performance of a micro TEC, we made 10 um height TE legs using special PR only for lift-off. We measured COP (coefficient of performance) and temperature difference between hot and cold connectors with current.

• ETRI Journal
• /
• v.27 no.1
• /
• pp.122-125
• /
• 2005

A polymer-based planar-lightwave-circuit-type variable optical attenuator (VOA) was fabricated using a hot embossing process. With an optimized one-step embossing process, forty micro-channels for the guidance of light were defined on a polymer thin film with an accuracy of ${\pm}0.5{\mu}m$. The fabricated polymeric thermo-optic VOA shows 30 dB attenuation with 110 mW electrical input power at $1.55{\mu}m$. The rise and fall times are less than 5 ms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.152-153
• /
• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.172-175
• /
• 2009

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

• Mass Spectrometry Letters
• /
• v.12 no.1
• /
• pp.26-30
• /
• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• Journal of the Korean Home Economics Association
• /
• v.19 no.3
• /
• pp.41-45
• /
• 1981

This study was carried out to observe the changes of Vitamin C content and to preserve the quality for the circulation periods of hot green pepper fruits wrapped with polyethylene film under the indoor temperature, as well as to find the proper time for harvest of hot green pepper fruits as a hot taste food and vegetable. the results obstained were as follows: 1. The consignment rate of hot green pepper fruits was highest, 60.2% on the 25th day after flowering, the nest 25.4% on the 20 th day, 10.3% on the 30th day and 4.1% on the 35th day. 2. the content of Vitamin C I each pepper fruits was highest o the 30th day, considerably high on the 25th day and 20th day. 3. The total content of Vitamin C in each part of hot green pepper fruits; the content in pericarp was much higher than in placenta and seed, and that of hydro type Vitamin C was almost the same. 4. The reduction rate of vitamin C during circulation periods was highest on the 3rd day; 42% in pericarp, 50% in placenta, 65% in seed. But in the package wrapped up with polyethylene film, the reduction rate in the same period was 5% in pericarp, which was very low in reduction, and those in placenta and seed were almost the same as in the unwrapped state.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.69-72
• /
• 2004

There are an electronic and a manual type in Bidet. The electronic bidet has some advantages. it supplies multiple functions and is up easily. However, it has frequent defects and a high price. The manual bidet is not need to supply electric and is cheaper than the electronic type. However, it is needed to supply hot water and is hard to set up. In order to solve these defects, this study designed a bidet heating unit using an electric instantaneous water heating method. To get a proper heating elements, experiments were performed about a Ni-Cr heater and a film heater.