• Title/Summary/Keyword: Hot electron

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Carbon Particle-Doped Polymer Layers on Metals as Chemically and Mechanically Resistant Composite Electrodes for Hot Electron Electrochemistry

  • Habiba, Nur-E;Uddin, Rokon;Salminen, Kalle;Sariola, Veikko;Kulmala, Sakari
    • Journal of Electrochemical Science and Technology
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    • v.13 no.1
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    • pp.100-111
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    • 2022
  • This paper presents a simple and inexpensive method to fabricate chemically and mechanically resistant hot electron-emitting composite electrodes on reusable substrates. In this study, the hot electron emitting composite electrodes were manufactured by doping a polymer, nylon 6,6, with few different brands of carbon particles (graphite, carbon black) and by coating metal substrates with the aforementioned composite ink layers with different carbon-polymer mass fractions. The optimal mass fractions in these composite layers allowed to fabricate composite electrodes that can inject hot electrons into aqueous electrolyte solutions and clearly generate hot electron- induced electrochemiluminescence (HECL). An aromatic terbium (III) chelate was used as a probe that is known not to be excited on the basis of traditional electrochemistry but to be efficiently electrically excited in the presence of hydrated electrons and during injection of hot electrons into aqueous solution. Thus, the presence of hot, pre-hydrated or hydrated electrons at the close vicinity of the composite electrode surface were monitored by HECL. The study shows that the extreme pH conditions could not damage the present composite electrodes. These low-cost, simplified and robust composite electrodes thus demonstrate that they can be used in HECL bioaffinity assays and other applications of hot electron electrochemistry.

A Study on the Effects of Hot Phonon in Electron Transport at Millimeter-wave Frequencies (밀리미터 주파수에서 전자의 운동에 대한 Hot Phonon의 영향 연구)

  • 윤태섭
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1070-1078
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    • 1998
  • A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

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Surface Plasmon Effect in Hot Electron Based Photovoltaic Devices

  • Lee, Yeong-Geun;Jeong, Chan-Ho;Park, Jong-Hyeok;Park, Jeong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.162-162
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    • 2011
  • Nanometer-sized noble metals can trap and guide sunlight for enhanced absorption of light based on surface plasmon that is beneficial for generation of hot electron flows. A pulse of high kinetic energy electrons (1-3 eV), or hot electrons, in metals can be generated after surface exposure to external energy, such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not at thermal equilibrium with the metal atoms. It is highly probable that the correlation between hot electron generation and surface plasmon can offer a new guide for energy conversion systems [1-3]. We show that hot electron flow is generated on the modified gold thin film (<10 nm) of metal-semiconductor (TiO2) Schottky diodes by photon absorption, which is amplified by localized surface plasmon resonance. The short-circuit photocurrent obtained with low energy photons (lower than bandgap of TiO2, ~3.1-3.2 eV) is consistent with Fowler's law, confirming the presence of hot electron flows. The morphology of the metal thin film was modified to a connected gold island structure after heating to 120, 160, 200, and 240$^{\circ}C$. These connected island structures exhibit both a significant increase in hot electron flow and a localized surface plasmon with the peak energy at 550-570 nm, which was separately characterized with UV-Vis [4]. The result indicates a strong correlation between the hot electron flow and localized surface plasmon resonance with possible application in hot electron based solar cells and photodetectors.

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Hot Electron Induced Input offset Voltage Modeling in CMOS Differential Amplifiers (Hot electron에 의한 CMOS 차동증폭기의 압력 offset 전압 모델링)

  • Jong Tae Park
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.7
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    • pp.82-88
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    • 1992
  • This paper presents one of the first comprehensive studies of how hot electron degradation impacts the input offset voltage of a CMOS differential amplifiers. This study utilizes the concept of a virtual source-coupled MOSFET pair in order to evaluate offset voltaged egradation directly from individual device measurement. Next, analytical models are developed to describe the offset voltage degradation. These models are used to examine how hot electron induced offset voltage is affected with the device parameters.

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Analysis of Hot Electrons in nMOSFET by Monte Carlo Simulation (Monte Carlo simulation에 의한 nMOSFET의 hot electron 현상해석)

  • Min, Byung-Hyuk;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.193-196
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    • 1987
  • We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

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Hot Electron Emission Test of an Ion Source for a Micro Mass Spectrometer (초소형 질량 분석기를 위한 이온 발생기의 열전자 방출 시험)

  • Yoon, Hyeun-Joong;Kim, Jung-Hoon;Park, Tae-Gyu;Yang, Sang-Sik;Jung, Kwang-Woo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.8
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    • pp.419-422
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    • 2001
  • This paper presents the principle and fabrication of a novel micro mass spectrometer and emission test of hot electron for ionization. A micro mass spectrometer consists of a micro ion source and a micro ion separator. The micro ion source consists of a hot filament and grid electrodes. Electrons emitted from a hot filament are to ionize some sample molecules. The ions are accelerated to an ion detector by an electric field. Mass can be analyzed by using the time of fight depending on the mass-to-charge ratio. The current of hot electron emission from the hot filament is measured for various input voltages.

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Monte Carlo Study of Hot-Electron Transport in AlInAs/GaInAs Modulation-Doped Structure (Monte Carlo 모의실험에 의한 AlInAs/GaInAs 변조 도핑 구조에서의 Hot-Electron Transport에 관한 연구)

  • Kim, Choong-Won;Park, Seong-Ho;Kim, Koung-Suk;Han, Baik-Hyung
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.3
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    • pp.79-85
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    • 1990
  • Monte Carlo simulation of hot-electron transport in $Al_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$ As modulation-doped structure has been performed in which the nonparabolicity in $\Gamma$ valley is taken into account. The calculated results show that the inclusion of the nonparabolicty effect results in a huge decrease in drift velocity.

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Investigations on electron beam weldability of AlZnMgCu0.5 alloys (AlZnMgCu0.5 합금의 Electron Beam 용접성에 관한 연구)

  • 배석천
    • Journal of Welding and Joining
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    • v.15 no.4
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    • pp.166-177
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    • 1997
  • The high strength AlZnMgCu0.5 alloy is a light metal with good age hardenability, and has a high tensile and yielding strength. Therefore, it can be used for structures requiring high speciple strength. Even though high strength AlZnMgCu alloy has good mechanical properties, it has a lot of problems in TIG and MIG welding processes. Since lots of high heat absorption is introduced into the weldment during TIG and MIG processes, the microstructural variation and hot cracks take place in heat affected zone. Therefore, the mechanical properties of high strength AlZnMgCu0.5 alloy can be degraded in weldment and heat affected zone. Welding process utilizing high density heat source such as electron beam should be developed to reduce pore and hot cracking, whichare usually accompanied by MIG and TIG welding processes. In this work, electron beam welding process were used with or without AlMg4.5Mn as filler material to avoid the degradation of mechanical properties. Mechanical and metallurgical characteristics were also studied in electron beam weldment and heat affected zone. Moreover hot cracking mechanism was also investigated.

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Development of Alloy 718 Nozzle for Jet Propulsion Component (고속 추진체용 Alloy 718 노즐 단조품 개발)

  • Kim, Jeoung-Han;Kim, Nam-Yong;Yeom, Jong-Taek;Hong, Jae-Keun;Park, Nho-Kwang
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2008.05a
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    • pp.39-42
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    • 2008
  • Alloy 718 nozzle component was manufactured by hot working and electron beam welding process. In this process, domestic 718 materials were applied and evaluated. Hot compression tests were carried out at a lot of process conditions and microstructural evaluation was investigated. Using the results, FEM simulations were performed in order to optimize the hot working process. After hot working, forged work-pieces were machined and welded by electron beam. Final nozzle component were heat treated and their microstructure and mechanical properties were investigated.

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Probing Polarization Modes of Ag Nanowires with Hot Electron Detection on $Au/TiO_2$ Nanodiodes

  • Lee, Young Keun;Lee, Jaemin;Lee, Hyosun;Lee, Jung-Yong;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.225-225
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    • 2013
  • Nanostructured noble metals have been attractive for their unusual optical properties and are widely utilized for various purposes. The optical properties mainly originating from collective electron oscillation can assist direct energy conversion via surface plasmon resonances. Here, we investigated the effect of surface plasmons of silver nanowires on the generation of hot electrons. It is reported that the surface plasmons of silver nanowires exhibit longitudinal and transverse modes, depending on the aspect ratio of the nanowires. In order to measure the hot electron flow through the metallic nanowires, chemically modified Au/TiO2 Schottky diodes were employed as the electric contact. The silver nanowires were deposited on a Au metal layer via the spray method to control uniformity and the amount of silver nanowire deposited. We measured the hot electron flow generated by photon absorption on the silver nanowires deposited on the Au/TiO2 Schottky diodes. The incident photon-to-current efficiency was measured a function of the photon energy, revealing two polarization modes of siliver nanowires: transverse and longitudinal modes. UV-Vis spectra exhibited two polarization modes, which are also consistent with the photocurrent measurements. Good correlation between the IPCE and UV-vis measurements suggests that hot electron measurement on nanowires on nanodiodes is a useful way to reveal the intrinsic properties of surface plasmons of nanowires.

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