• 제목/요약/키워드: Hot Channel

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LOFT L2-5 대형 냉각제상실사고 모사실험에 대한 RELAP5/ MOD2 코드 평가 (Assessment of RELAP5/MOD2 with LOFT L2-5 LBLOCA Test)

  • 방영석;이상용;김효정;김시환
    • Nuclear Engineering and Technology
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    • 제21권4호
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    • pp.259-266
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    • 1989
  • LOFT L2-5 대형 냉각재상실사고 모사실험에 대해 RELAP5/MOD2/Cycle 36.04로부터 개선된 코드를 이용, 코드평가를 수행하였다. 강수관(Downcomer)모델 및 노심유로모델에 따른 코드 민감도분석을 위해 보충계산을 수행하였다. 계산결과는 1차계통의 압력, 파단부를 통과하는 질량유량, 노심 고온부의 피복재 온도등에 대해서 실험결과와 비교 분석되었다. 분석결과 RELAP5/MOD2 계산에 의해 1차계통의 수력학적 거동은 잘 묘사될 수 있으며, 단일 노심유로 모델을 이용한 계산에서는 사고발생이후 감압기간동안 노심이 과대 냉각되는 현상이 발견되었다. 노심의 고온유로에서의 수력학적 거동을 잘 묘사할 수 있는 이중 노심유로 모델계산을 이용하여 이 현상을 극복하고 실험치에 근사하는 결과를 얻을 수 있음을 알 수 있었다.

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렴瘡에 對한 文獻的 考察 (A literatual study on the Ecthyma)

  • 김희택;오영선;노석선
    • 한방안이비인후피부과학회지
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    • 제10권1호
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    • pp.209-246
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    • 1997
  • In the literatual study on the Ecthyma, the results were as follows. 1. The pathogenic factors of Ecthyma is divided three parts. One is exogenous pathogenic factors which including the wind evil, wind heat and toxic material produced by wetness evil. Another is endogenous pathogenic factors which including the declination of kidney-yang, impairment of the liver and kidney, the lower classes of yin-fire, accumulation of wetness-heat in the spleen asthenia, impairment of the liver and kidney, wetness-heat of three yang, asthenic heat-syndrome of three yin. The other is pathogenic factors neither endogenous nor exogenous which including the food and living, uncontrol sexual excess, anxiety and angry, injury of skin, injury of insects and animals. 2. Five viscera which was concerned with Ecthyma are liver, spleen and kidney. 3. Frequent region of Ecthyma are S-36(足三里) and C-7(陰交). External Ecthyma was rose to wetness-heat of three yang channel that cured easily. Internal Ecthyma was rose to asthenic heat-syndrome of three yin channel that cured hardly. 4. In the frequency of prescription, the most numerous prescription is Bojungikgitang(補中益氣湯) and the next are Kyukgigo(隔紙膏) and Yukmijihwanghwan(六味地滉丸). 5. In the frequency of medicine, the most medicine is Calomelas(輕粉) which included Hydrargyrum(水銀) and the next are Olibanum(乳香) and Resina Commiphorae Myrrhae(沒藥) which regulating vital energy and pain control medicine used that in order to destroy insects and remove polson. 6. In classification of the medical action, medicine of clearing away summer-heat and heat evil and activating blood circulation to dissipate blood stasis used to be very busy which in order to remove the disorder of vital energy for virulent heat-evil. 7. In classification of four characters, the most part is warm medicine, the next are cold and cool medicine and there is a few that is hot medicine. 8. In classification of five tastes, the most numerous tastes are bitter and acrid, the next are sweet, salty and sour tastes. 9. In classification of virulence of medicine, the most part is non-toxic, the next are weakly and deadly poison. 10. In classification of channel distribution, the most is the medicine that belongs to liver channel, the next are the lung, spleen, stomach and kidney channel.

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MNSR transient analysis using the RELAP5/Mod3.2 code

  • Dawahra, S.;Khattab, K.;Alhabit, F.
    • Nuclear Engineering and Technology
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    • 제52권9호
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    • pp.1990-1997
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    • 2020
  • To support the safe operation of the Miniature Neutron Source Reactor (MNSR), a thermo-hydraulic transient model using the RELAP5/Mod3.2 code was simulated. The model was verified by comparing the results with the measured and the previously calculated data. The comparisons consisted of comparing the MNSR parameters under normal constant power operation and reactivity insertion transients. Reactivity Insertion Accident (RIA) for three different initial reactivity values of 3.6, 6.0, and 6.53 mk have been simulated. The calculated peaks of the reactor power, fuel, clad and coolant temperatures in hot channel were calculated in this model. The reactor power peaks were: 103 kW at 240 s, 174 kW at 160 s and 195 kW at 140 s, respectively. The fuel temperature reached its maximum value of 116 ℃ at 240 s, 124 ℃ at 160 s and 126 ℃ at 140 s respectively. These calculation results ensured the high inherently safety features of the MNSR under all phases of the RIAs.

Diagnostic and Therapeutic Implications of the Vascular Endothelial Growth Factor Family in Cancer

  • Riaz, Syeda Kiran;Iqbal, Yasmeen;Malik, Muhammad Faraz Arshad
    • Asian Pacific Journal of Cancer Prevention
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    • 제16권5호
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    • pp.1677-1682
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    • 2015
  • Cancer progression is attained by uncontrolled cell division and metastasis. Increase in tumor size triggers different vascular channel formation to address cell nutritional demands. These channels are responsible for transferring of nutrients and gaseous to the cancer cells. Cancer vascularization is regulated by numerous factors including vascular endothelial growth factors (VEGFs). These factors play an important role during embryonic development. Members included in this group are VEGFA, VEGFB, VEGFC, PIGF and VEGFD which markedly influence cellular growth and apoptosis. Being freely diffusible these proteins act in both autocrine and paracrine fashions. In this review, genetic characterization these molecules and their putative role in cancer staging has been elaborated. Prognostic significance of these molecules along with different stages of cancer has also been summarized. Brief outline of ongoing efforts to target hot spot target sites against these VEGFs and their cognate limitations for therapeutic implications are also highlighted.

Advanced P-Channel Poly-Si TFTs for SOG

  • Park, Seong-Jin;Kang, Sang-Hoon;Ku, Yu-Mi;Choi, Jong-Hyun;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1019-1022
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    • 2004
  • High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

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Comparison of Degradation Phenomenon in the Low-Temperature Polysilicon Thin-Film Transistors with Different Lightly Doped Drain Structures

  • Lee, Seok-Woo;Kang, Ho-Chul;Nam, Dae-Hyun;Yang, Joon-Young;Kim, Eu-Gene;Kim, Sang-Hyun;Lim, Kyoung-Moon;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1258-1261
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    • 2004
  • Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

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No Blind Spot: Network Coverage Enhancement Through Joint Cooperation and Frequency Reuse

  • Zhong, Yi;Qiao, Pengcheng;Zhang, Wenyi;Zheng, Fu-chun
    • Journal of Communications and Networks
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    • 제18권5호
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    • pp.773-783
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    • 2016
  • Both coordinated multi-point transmission and frequency reuse are effective approaches to mitigate inter-cell interference and improve network coverage. The motivation of this work is to explore the manner to effectively utilize the spectrum resource by reasonably combining cooperation and frequency reuse. The $Mat{\acute{e}}rn$ cluster process, which is appropriate to model networks with hot spots, is used to model the spatial distribution of base stations. Two cooperative mechanisms, coherent and non-coherent joint transmission (JT), are analyzed and compared. We also evaluate the effect of multiple antennas and imperfect channel state information. The simulation reveals that the proposed approach to combine cooperation and frequency reuse is effective to improve the network coverage for users located at both the center and the boundary of the cooperative region.

SC PMOSFET의 수평 전개 모델과 노쇠화 메카니즘 (Lateral Electric Field Model and Degradation Mechanism of surface-Channel PMOSFET's)

  • 양광선;박종태;김봉렬
    • 전자공학회논문지A
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    • 제31A권1호
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    • pp.54-60
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    • 1994
  • In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

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고집적화된 1TC SONOS 플래시 메모리에 관한 연구 (A study on the High Integrated 1TC SONOS Flash Memory)

  • 김주연;이상배;한태현;안호명;서광열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.26-31
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    • 2002
  • To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

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고온에서 PD-SOI PMOSFET의 소자열화 (Hot carrier induced device degradation for PD-SOI PMOSFET at elevated temperature)

  • 박원섭;박장우;윤세레나;김정규;박종태
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.719-722
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    • 2003
  • This work investigates the device degradation p-channel PD SOI devices at various applied voltages as well as stress temperatures with respect to Body-Contact SOI (BC-SOI) and Floating-Body SOI (FB-SOI) MOSFETs. It is observed that the drain current degradation at the gate voltage of the maximum gate current is more significant in FB-SOI devices than in BC-SOI devices. For a stress at the gate voltage of the maximum gate current and elevated temperature, it is worth noting that the $V_{PT}$ Will be decreased by the amount of the HEIP plus the temperature effects. For a stress at $V_{GS}$ = $V_{DS}$ . the drain current decreases moderately with stress time at room temperature but it decreases significantly at the elevated temperature due to the negative bias temperature instability.

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